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Silicon carbide/copper silicon alloy codual-continuous composite and preparation method thereof

A technology of copper-silicon alloy and composite material, applied in the field of silicon carbide/copper-silicon alloy dual-continuous phase composite material and its preparation, can solve the problems of limited shape complexity of parts, deterioration of composite material performance, high mold requirements, etc., to avoid The effect of excessive thermal stress, reduction of thermal expansion coefficient and simple preparation process

Inactive Publication Date: 2013-03-13
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the one hand, due to the extrusion casting method, some pores will remain in the composite material sample prepared by it, thus deteriorating the performance of the composite material; the shape complexity of the part is also limited; and the preform is easily damaged during the pressurization process, and The requirements for molds are high; on the other hand, because the copper alloy used is a wear-resistant copper alloy in brass or bronze, its wettability with silicon carbide is poor and severe reactions occur, resulting in low bonding strength at the interface of the composite material And a brittle reaction layer appears on the interface, which significantly reduces the reliability of the composite material

Method used

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  • Silicon carbide/copper silicon alloy codual-continuous composite and preparation method thereof
  • Silicon carbide/copper silicon alloy codual-continuous composite and preparation method thereof

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Embodiment 1

[0028] In this embodiment, a silicon carbide / copper-silicon alloy dual continuous phase composite material, the volume of the silicon carbide phase accounts for 35% of the total volume of the composite material, and the atomic percentage of silicon in the copper-silicon alloy phase is 15%. The preparation method is as follows figure 1 Shown include the following steps:

[0029] Step 1: First weigh 90% of SiC powder and 4% of Al by mass percentage 2 o 3 and 6% Y 2 o 3 As a sintering aid, then use alcohol as the ball milling medium for 12 hours, then put the ball-milled mixture into an oven, dry it at 80°C for 10 hours, pass through a 200-mesh sieve, and add 5% of the mixture by mass The polyvinyl alcohol solution with a mass concentration of 10% is used as a binder. After being ground and mixed, it is passed through a 200-mesh sieve. The sieved mixed powder is put into a mold cavity for molding, and the molding pressure is 10MPa to make a silicon carbide raw material. Blank...

Embodiment 2

[0034] In this embodiment, a silicon carbide / copper-silicon alloy dual continuous phase composite material, the volume of the silicon carbide phase accounts for 50% of the total volume of the composite material, and the atomic percentage of silicon in the copper-silicon alloy phase is 40%, and its preparation method is as follows figure 1 Shown include the following steps:

[0035] Step 1: First weigh 90% of SiC powder and 4% of Al by mass percentage 2 o 3 and 6% Y 2 o 3 As a sintering aid, then use alcohol as the ball milling medium for ball milling for 12 hours, then put the ball milled mixture into an oven, dry it at 90°C for 10 hours, pass through a 200 mesh sieve, and add 5% of the mixture by mass The polyvinyl alcohol solution with a mass concentration of 10% is used as a binder. After being ground and mixed, it is passed through a 200-mesh sieve. The sieved mixed powder is put into a mold cavity for molding, and the molding pressure is 10MPa to make a silicon carbide...

Embodiment 3

[0040] In this embodiment, a silicon carbide / copper-silicon alloy dual continuous phase composite material, the volume of the silicon carbide phase accounts for 50% of the total volume of the composite material, and the atomic percentage of silicon in the copper-silicon alloy phase is 15%, and its preparation method is as follows figure 1 Shown include the following steps:

[0041] Step 1: First weigh 90% of SiC powder and 4% of Al by mass percentage 2 o 3 and 6% Y 2 o 3 As a sintering aid, then use alcohol as the ball milling medium for ball milling for 12 hours, then put the ball milled mixture into an oven, dry it at 80°C for 10 hours, pass through a 200 mesh sieve, and add 15% of the mixture by weight The polyvinyl alcohol solution with a mass concentration of 10% is used as a binder. After being ground and mixed, it is passed through a 200-mesh sieve. The sieved mixed powder is put into the mold cavity and molded. The molding pressure is 5MPa to make silicon carbide ra...

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Abstract

The invention discloses a silicon carbide / copper silicon alloy codual-continuous composite and a preparation method thereof. The composite material comprises the following components in volume fraction: 35-50 percent of porous silicon carbide ceramics and 50-65 percent of copper silicon alloy, wherein the atomic percentage composition of silicon in the copper silicon alloy is 15-40 percent. The preparation method comprises two key processing steps of: preparing the porous silicon carbide ceramics and vacuum infiltrating porous silicon carbide through the copper silicon alloy. Silicon is adopted as an alloying element of copper, so that the problems of wettability and reactivity between copper and silicon carbide are solved simultaneously. In addition, the invention adopts a vacuum infiltrating process as a near net forming preparation process, and specialized die casting equipment and a specific module are not needed, so that the preparation process is simple, has low cost, and can be used for manufacturing various composites with complicated shapes.

Description

technical field [0001] The invention relates to the technical field of electronic packaging functional materials, in particular to a silicon carbide / copper-silicon alloy dual continuous phase composite material and a preparation method thereof. Background technique [0002] High thermal conductivity, low thermal expansion coefficient and low density are the three basic elements that must be considered in the development of modern electronic packaging materials. It is difficult for traditional packaging materials to meet the requirements for the above-mentioned properties at the same time. Such as Cu / W, Cu / Mo, Invar / Cu and other materials commonly used in the field of electronic packaging materials. Although this type of copper-based composite material has high thermal conductivity and low thermal expansion coefficient, the disadvantage of this type of material is that the density is too high. Large, increasing the quality of the package, and poor airtightness, affecting the ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22D19/16C22C32/00C22C29/06
Inventor 乔冠军张阔刘桂武史忠旗王继平王红洁杨建锋
Owner XI AN JIAOTONG UNIV
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