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Preparation method for growing zinc oxide nano wire arrays

A technology of zinc oxide nanowires and zinc oxide seed layers is applied in the field of preparation of zinc oxide nanowire arrays, which can solve the problems of small nanowire arrays and difficulty in obtaining diameter of ZnO nanowires, and achieve large specific surface area, low cost, and synthetic simple craftsmanship

Inactive Publication Date: 2015-02-18
SHANGHAI NAT ENG RES CENT FORNANOTECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Usually the method for growing one-dimensional ZnO nanowires is a hydrothermal method, which can prepare uniformly dispersed ZnO nanowires, but it is difficult to obtain a nanowire array with a small diameter for the ZnO nanowires grown by this method. In order to increase the specific surface area of ​​the nanowires, To make it absorb more dyes to improve the photoelectric conversion efficiency of solar cells, it is very necessary to study a simple, cheap and suitable method for industrial production to prepare small-sized one-dimensional ZnO nanowire arrays, and provide a high-quality dye-sensitive nanowire array for the market. Photoanode materials for solar cells

Method used

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  • Preparation method for growing zinc oxide nano wire arrays
  • Preparation method for growing zinc oxide nano wire arrays

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Experimental program
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Embodiment 1

[0023] Preparation of ZnO seed layer:

[0024] Raise the temperature of the inner cavity of the atomic layer deposition system to 150℃, open the cavity, and put the substrate into the cavity; the pressure in the cavity drops below 25 hPa, clean the reaction cavity with inert gas; pass the zinc precursor into the reaction cavity, The pulse time is 0.1 s, and then the inert gas is used to clean the unreacted precursor. The pulse time is 5 s, and then the oxygen precursor is passed in. The pulse time is 0.1 s; then the inert gas is used to clean the unreacted oxygen precursor to complete one The cycle of depositing zinc oxide; repeat this, depositing 100 cycles of ZnO layer on the surface of the substrate; annealing in a muffle furnace at 400°C for 2 hours.

[0025] Growth of ZnO nanowire array:

[0026] Weigh 2 g of NaOH powder into a three-necked bottle, take 1 ml of triethanolamine in the three-necked bottle, add 25 ml of deionized water to the three-necked bottle, weigh 7 g of zinc...

Embodiment 2

[0029] Preparation of ZnO seed layer:

[0030] Raise the temperature of the inner cavity of the atomic layer deposition system to 150℃, open the cavity, and put the substrate into the cavity; the pressure in the cavity drops below 25 hPa, clean the reaction cavity with inert gas; pass the zinc precursor into the reaction cavity, The pulse time is 0.5 s, and then the inert gas is used to clean the unreacted precursor. The pulse time is 5 s, and then the oxygen precursor is passed in. The pulse time is 0.5 s; then the inert gas is used to clean the unreacted oxygen precursor to complete one The cycle of depositing zinc oxide; repeating this way, depositing 200 cycles of ZnO layer on the surface of the substrate; annealing in a muffle furnace at 400°C for 3 hours.

[0031] Growth of ZnO nanowire array:

[0032] Weigh 4 g of NaOH powder into a three-necked bottle, take 3 ml of triethanolamine in a three-necked bottle, add 50 ml of deionized water to the three-necked bottle, weigh out 10...

Embodiment 3

[0034] Preparation of ZnO seed layer:

[0035] Raise the temperature of the inner cavity of the atomic layer deposition system to 200℃, open the cavity, and put the substrate into the cavity; the pressure in the cavity drops below 25 hPa, clean the reaction cavity with inert gas; pass the zinc precursor into the reaction cavity, The pulse time is 1 s, and then the inert gas is used to clean the unreacted precursor. The pulse time is 5 s, and then the oxygen precursor is passed in. The pulse time is 1 s; then the inert gas is used to clean the unreacted oxygen precursor to complete one The cycle of depositing zinc oxide; repeating this way, depositing 100 cycles of ZnO layer on the surface of the substrate; annealing in a muffle furnace at 500°C for 2 hours.

[0036] Growth of ZnO nanowire array:

[0037] Weigh 2 g of NaOH powder into a three-necked bottle, take 1 ml of diethanolamine in the three-necked bottle, add 25 ml of deionized water to the three-necked bottle, weigh 5 g of zi...

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Abstract

The invention discloses a preparation method for growing zinc oxide nano wire arrays. The method comprises the steps of preparing a zinc oxide seed layer on a substrate by using an atomic layer deposition technology, and forming the ZnO nano wire arrays on the substrate under an alkaline condition via a chemical solution method by using a water-soluble zinc salt as a precursor, triethanolamine or diethanolamine as a surface modification agent. The method is simple in operation; the grown nano wires have small diameter; and the method is suitable for applications in the field of gas sensors, solar cell light anodes, etc.

Description

Technical field [0001] The invention relates to a preparation technology of a metal oxide nanowire array, in particular to a preparation method of a zinc oxide nanowire array. Background technique [0002] In order for solar cells to replace traditional fossil fuels, low-cost and high-efficiency photovoltaic devices must be constructed. An important idea to reduce the cost of solar cells and improve their photoelectric conversion efficiency and stability is to use nanotechnology to build nanostructured devices to improve the effective absorption and utilization of sunlight by solar cells. [0003] In 2005, 1-D ZnO nanowires were first applied to the field of nanocrystalline solar cells. On the one hand, by increasing the specific surface area of ​​the photoanode, more sensitizing functional materials can be adsorbed, thereby improving the light collection efficiency and photovoltaic characteristics of the photoanode; on the other hand, enhancing the scattering performance of the p...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G9/02B82Y30/00B82Y40/00
Inventor 葛美英尹桂林姜来新汪元元何丹农
Owner SHANGHAI NAT ENG RES CENT FORNANOTECH