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Niobium target and preparation method of niobium target

A niobium target and niobium tube technology, applied in the target field, can solve the problems of inability to guarantee the uniformity of the grain structure and surface roughness of the niobium sputtering target, and achieve low surface roughness value, uniform internal grains, and surface roughness. good quality effect

Active Publication Date: 2013-04-03
NINGXIA ORIENT TANTALUM IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The above method only uses the hot extrusion method to process the niobium tube billet, so the uniformity and surface roughness of the internal grain structure of the niobium sputtering target cannot be guaranteed.

Method used

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  • Niobium target and preparation method of niobium target
  • Niobium target and preparation method of niobium target

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preparation example Construction

[0033] The embodiment of the present invention discloses a method for preparing a niobium target, which includes the following steps:

[0034] a) Preheating the niobium tube blank, and applying glass powder on the surface of the preheated niobium tube blank;

[0035] b) hot-extruding the niobium tube blank obtained in step a), pickling the hot-extruded niobium tube blank, and heat-treating the pickled niobium tube blank;

[0036] c) Boring and milling the inner hole of the niobium tube blank obtained in step b) by using the first cutter to obtain a niobium target; the cutter head of the first cutter is a double cutter head or a single cutter head, and the cutter head of the first cutter The length of the rod is greater than 5000 mm, the double cutter heads are arranged in sequence along the axial direction at the working end of the cutter rod, and the blade inclination angle of the cutter heads is a negative value.

[0037] According to the present invention, it is first nece...

Embodiment 1

[0062] Step 1. Obtain niobium oxide by aluminothermic reduction of niobium pentoxide, and smelt niobium oxide in a horizontal furnace and an electron beam furnace respectively to obtain a niobium ingot with a diameter of Φ190mm, a length of 390mm, and a chemical composition of Nb≥99.95%;

[0063] Step 2. Preheat the niobium ingot obtained in step 1 to 200°C, apply glass powder, heat the ingot to 400°C, keep it warm for 3 hours, upsetting the niobium ingot axially to 210mm, and stretching to 200×200×280mm;

[0064] Step 3. Pickling the niobium ingot obtained in step 2: HCl:HF:H2SO4=5:3:2 (volume ratio), pickling time for 10 minutes, remove surface impurities and glass powder, and observe the luster of niobium metal without impurities spots can be;

[0065] Step 4. Carry out heat treatment to the niobium ingot obtained in step 3: the heat treatment temperature is 1000° C., and the holding time is 60 min;

[0066] Step 5. Upsetting the niobium ingot obtained in step 4 to 220mm, ...

Embodiment 2

[0081] Step 1. Obtain niobium oxide by aluminothermic reduction of niobium pentoxide, and smelt niobium oxide in a horizontal furnace and an electron beam furnace respectively to obtain a niobium ingot with a diameter of Φ290mm, a length of 620mm, and a chemical composition of Nb≥99.95%;

[0082] Step 2. Preheat the niobium ingot obtained in step 1 to 200°C, apply glass powder, heat the ingot to 400°C, keep it warm for 3 hours, upsetting the niobium ingot axially to 340mm, and stretching to 280×280×520mm;

[0083] Step 3, pickling the niobium ingot obtained in step 2: HCl: HF: H 2 SO 4 =5:3:2 (volume ratio), pickling time is 10 minutes, remove surface impurities and glass powder, and the niobium metal luster can be seen without specks by naked eyes;

[0084] Step 4. Carry out heat treatment to the niobium ingot obtained in step 3: the heat treatment temperature is 1000° C., and the holding time is 60 min;

[0085] Step 5. Upsetting the niobium ingot obtained in step 4 to 290...

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Abstract

The invention provides a preparation method of a niobium target. According to the preparation method, firstly, a niobium pipe blank is subjected to hot extrusion, and then, the niobium pipe blank subjected to the hot extrusion is subjected to inner hole processing, so the niobium target is obtained. In the niobium target preparation process, firstly, glass powder is coated on the niobium pipe blank surface, because the niobium pipe blank surface is sprayed with the glass powder, a better lubricating effect is realized in the extrusion process, and the surface quality of the niobium pipe blank is better; the subsequent hot extrusion processing and the thermal treatment are favorable for the refining and homogenization of niobium pipe blank crystalline grains; and finally, the extruded niobium pipe blank is subjected to machining, a special tool is selected for carrying out boring and milling inner holes of the niobium pipe blank, broken chips can be continuously discharged out from the inner holes, and the problem of inner hole surface processing influence caused by the accumulation of the broken chips in the inner holes is avoided, so the niobium target with uniform inner crystalline grains and lower surface roughness value is obtained. The invention also provides the niobium target.

Description

technical field [0001] The invention relates to the technical field of target materials, in particular to a niobium target material and a preparation method thereof. Background technique [0002] The target is the material used as the cathode in the sputtering deposition technique, which can be separated from the cathode in the form of molecules, atoms or ions under the impact of positively charged cations and redeposited on the surface of the anode. As a special electronic material with high added value, the target is widely used as a thin film material for sputtering cutting-edge technology. According to the application, the targets mainly include targets for the semiconductor field, targets for recording media, targets for display films, advanced touch screens and displays, optical targets and superconducting targets, etc. [0003] Magnetron sputtering is one of the main technologies for preparing thin film materials. It uses ion sources to generate ions, and the generat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B23P15/00
CPCC23C14/14C23C14/34C23C14/3414
Inventor 李桂鹏王莉汪凯同磊张春恒张国军李兆博郭从喜任晓许宁
Owner NINGXIA ORIENT TANTALUM IND
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