Method for preparing tetragonal-phase room-temperature multi-ferroic material BiFeO3

A phase room temperature multiferroic, tetragonal technology, applied in the growth of polycrystalline materials, chemical instruments and methods, metal material coating technology and other directions, can solve the problem of unable to maintain the tetragonal phase structure, etc. Simple, great adjustment of the elastic effect

Inactive Publication Date: 2013-04-03
SOUTHEAST UNIV
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Problems solved by technology

But due to the tetragonal phase BiFeO 3 with LaAlO 3 Mismatch of substrate lattice constant, at thickness greater than 40nm, BiFeO 3 The thin film will not be able to maintain the tetragonal phase structure of the single phase

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  • Method for preparing tetragonal-phase room-temperature multi-ferroic material BiFeO3

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Embodiment Construction

[0015] In order to make the objectives, technical solutions, and advantages of the present invention clearer, the following further describes the present invention in detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, but not used to limit the present invention.

[0016] The purpose of the present invention is to provide a tetragonal phase room temperature multiferroic material BiFeO 3 The preparation process, the preparation method is first in (001) LaAlO 3 Prepare a layer of NdAlO on the substrate 3 Buffer layer in NdAlO 3 Deposit BiFeO on the buffer layer 3 The thin film can obtain single-phase tetragonal BiFeO with a larger thickness range 3 film.

[0017] In the embodiment of the present invention, various thin film preparation processes such as pulsed laser deposition technology, magnetron sputtering, and molecular beam epitaxy technology can be...

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Abstract

The invention discloses a method for preparing a tetragonal-phase room-temperature multi-ferroic material BiFeO3, which comprises the following specific steps of: on a (001) LaAlO3 monocrystalline substrate, depositing a layer of NdAlO3 thin film as a buffer layer, and depositing a BiFeO3 thin film to prepare the BiFeO3 in a single-phase tetragonal-phase structure. The method disclosed by the invention effectively avoids phase separation caused by lattice relaxation due to lattice mismatch between the LaAlO3 and other substrates and the tetragonal-phase BiFeO3, and prepares a single-phase tetragonal-phase BiFeO3 thin film.

Description

Technical field [0001] The invention relates to a preparation of BiFeO tetragonal phase room temperature multiferroic material 3 The process belongs to the technical field of synthesis of inorganic nano materials. Background technique [0002] Today's society is an information explosion society, and information storage with lower energy consumption, higher speed and higher density has become increasingly important. For magnetic memory, a larger current is required to change the orientation of the magnetic moment of the ferromagnetic layer, which increases the complexity of the device structure and the energy consumption during operation, and affects the improvement of storage density. Ferroelectricity (antiferroelectricity), ferromagnetism (antiferromagnetism, ferrimagnetism) and other ferroelectricity coexist in the multiferroic material at the same time, which will realize the mutual regulation between electricity and magnetism, thus in spintronics It has important application...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/28C23C16/40C23C16/48C30B29/22C30B25/18
Inventor 徐庆宇袁学勇
Owner SOUTHEAST UNIV
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