Homoepitaxial gallium nitride high electron mobility transistor based on p-type gan leakage isolation layer and manufacturing method

Abstract

The invention discloses a homoepitaxial gallium nitride high electron mobility transistor based on a P-type GaN leakage isolation layer and a manufacturing method. It includes substrate, channel layer, AlN insertion layer, and barrier layer from bottom to top. There is a P-type GaN leakage isolation layer and a GaN buffer layer between them, which are used to isolate and shield the parasitic leakage channel caused by the adsorption of Si impurities on the substrate surface; Both sides of the barrier layer are ohmic contact regions, and source electrodes and drain electrodes are respectively arranged on the ohmic contact regions. The invention can effectively reduce the dislocation density of the heterogeneous epitaxial gallium nitride material, isolate the parasitic leakage of the homogeneous epitaxial interface of the gallium nitride material, reduce the difficulty of material epitaxy process control, improve the device breakdown voltage, output power and work reliability, and can be used Used in microwave power amplifiers and radio frequency integrated circuit chips.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a high electron mobility transistor, which can be used for making solid-state microwave power amplifiers and radio frequency integrated circuit chips. Background technique [0002] High electron mobility transistors based on wide-bandgap nitride semiconductor materials have the advantages of high frequency, high power, high efficiency, and high temperature resistance, and are the main devices for preparing solid-state microwave power amplifiers. After more than 20 years of experimental research, the performance and reliability of the device have been improved, and it has gradually entered the field of commercial application from experimental research, and has been widely used in electronic equipment such as 5G communication and information detection. In order to further improve the operating frequency, output power and efficiency of GaN HEMT devices, it ...

AI Technical Summary

Problems solved by technology

[0004] First, heteroepitaxial gallium nitride materials need to adopt a nucleation layer structure. The growth process, structure and thickness of the structure directly determine the crystallization quality and transport characteristics of the heterostructure material on it, and the process control is difficult and repeatable. and poor consistency

[0005] The second is that the heterogeneous epitaxial GaN material has high-density dislocation defects, which cause the device to form a leakage channel under the condition of long-term high-voltage bias operation, reduce the breakdown voltage of the device, and trap electrons at the same time, causing the current collapse of the device and reliability degradation

[0006] The third is that there is a high concentration of n-type Si impurities at the homoepitaxial interface during the homoepitaxial GaN material. This impurity will be introduced into the bulk leakage channel and it is difficult to completely remove it, which seriously reduces the breakdown voltage and output power density of the device.

[0007] Fourth, when metal-organic chemical vapor deposition technology is used to homoepitaxially epitaxial GaN materials, iron doping or carbon doping is required to compensate for the high concentration of Si impurities at the homoepitaxial interface, which increases the difficulty of material growth process and parasitic pollution.

[0008] The fifth is to make the source-drain electrodes directly on the surface of the barrier layer. The ohmic contact resistance of the source-drain electrodes is high, which affects the output characteristics of the device such as current and power.

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