Homoepitaxial gallium nitride high-electron-mobility transistor based on P-type GaN electric leakage isolation layer and manufacturing method of homoepitaxial gallium nitride high-electron-mobility transistor

Abstract

The invention discloses a homoepitaxial gallium nitride high-electron-mobility transistor based on a P-type GaN electric leakage isolation layer and a manufacturing method of the homoepitaxial gallium nitride high-electron-mobility transistor. The transistor comprises a substrate, a channel layer, an AlN insertion layer and a barrier layer from bottom to top, the substrate is made of a self-supporting gallium nitride substrate or a thick-film gallium nitride substrate material, and a P-type GaN electric leakage isolation layer and a GaN buffer layer are arranged between the substrate and the channel layer and used for isolating and shielding a parasitic electric leakage channel caused by Si impurity adsorption on the surface of the substrate; an insulated gate dielectric layer and a gate electrode are sequentially arranged on the upper portion of the barrier layer, ohmic contact areas are arranged on the two sides of the barrier layer respectively, and a source electrode and a drain electrode are arranged on the ohmic contact areas respectively. The dislocation density of the heteroepitaxial gallium nitride material can be effectively reduced, parasitic electric leakage of a homoepitaxial interface of the gallium nitride material is isolated, the control difficulty of a material epitaxial process is reduced, the breakdown voltage, the output power and the working reliability of a device are improved, and the method can be applied to microwave power amplifiers and radio frequency integrated circuit chips.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a high electron mobility transistor, which can be used for making solid-state microwave power amplifiers and radio frequency integrated circuit chips. Background technique [0002] High electron mobility transistors based on wide-bandgap nitride semiconductor materials have the advantages of high frequency, high power, high efficiency, and high temperature resistance, and are the main devices for preparing solid-state microwave power amplifiers. After more than 20 years of experimental research, the performance and reliability of the device have been improved, and it has gradually entered the field of commercial application from experimental research, and has been widely used in electronic equipment such as 5G communication and information detection. In order to further improve the operating frequency, output power and efficiency of GaN HEMT devices, it ...

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Problems solved by technology

[0004] First, heteroepitaxial gallium nitride materials need to adopt a nucleation layer structure. The growth process, structure and thickness of the structure directly determine the crystallization quality and transport characteristics of the heterostructure material on it, and the process control is difficult and repeatable. and poor consistency

[0005] The second is that the heterogeneous epitaxial GaN material has high-density dislocation defects, which cause the device to form a leakage channel under the condition of long-term high-voltage bias operation, reduce the breakdown voltage of the device, and trap electrons at the same time, causing the current collapse of the device and reliability degradation

[0006] The third is that there is a high concentration of n-type Si impurities at the homoepitaxial interface during the homoepitaxial GaN material. This impurity will be introduced into the bulk leakage channel and it is difficult to completely remove it, which seriously reduces the breakdown voltage and output power density of the device.

[0007] Fourth, when metal-organic chemical vapor deposition technology is used to homoepitaxially epitaxial GaN materials, iron doping or carbon doping is required to compensate for the high concentration of Si impurities at the homoepitaxial interface, which increases the difficulty of material growth process and parasitic pollution.

[0008] The fifth is to make the source-drain electrodes directly on the surface of the barrier layer. The ohmic contact resistance of the source-drain electrodes is high, which affects the output characteristics of the device such as current and power.

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