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A method for self-assembled growth of micro-nano scale graphene

A micro-nano scale, graphene technology, applied in graphene, single crystal growth, crystal growth and other directions, can solve problems such as increasing process complexity, and achieve strong promotion and application value, strong practicability, and improved lattice quality. Effect

Active Publication Date: 2016-04-27
XIDIAN UNIV
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  • Description
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  • Application Information

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Problems solved by technology

[0005] The present invention provides a method for self-assembled growth of micro-nanoscale graphene, aiming to solve the problem of the formation of the array of metal particles that requires special equipment when performing chemical vapor deposition on an array of transition group metal particles to obtain a micro-nanoscale graphene film. steps, increasing the complexity of the process

Method used

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  • A method for self-assembled growth of micro-nano scale graphene
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Embodiment 1

[0050] The realization steps of the present invention are as follows:

[0051] (1) The semiconductor device-level substrate Si / SiO 2 Sequentially use detergent, water, deionized water, analytically pure acetone, and analytically pure ethanol to ultrasonically clean for 5 minutes, then dry for 10 minutes;

[0052] (2) The semiconductor device-level substrate Si / SiO 2 In an argon (Ar) atmosphere, electron beam evaporation of copper is carried out under a vacuum of 0.1Torr, with an electron beam voltage of 10kV, a current of 1mA, and a copper film thickness of 0.1μm;

[0053] (3) Put the substrate into the CVD growth chamber, and inject H into the reaction chamber 2 , to process the deposited metal film, the flow rate is 1 sccm, the temperature is 900°C, the time is 20 minutes, and the air pressure is 1 Torr. Under the action of surface tension, the copper film is condensed into agglomerates, and an array of copper particles is formed on the surface of the substrate;

[0054] ...

Embodiment 2

[0057] The realization steps of the present invention are as follows:

[0058] (1) The substrate Si / SiN of the semiconductor device grade was ultrasonically cleaned with detergent, water, deionized water, analytically pure acetone and analytically pure ethanol for 5 minutes, and then dried for 10 minutes;

[0059] (2) E-beam evaporation coating of copper on semiconductor device-grade substrate Si / SiN in an argon atmosphere at a vacuum degree of 0.5 Torr, with an electron beam voltage of 50kV, a current of 5mA, and a copper film thickness of 0.1-1μm;

[0060] (3) Put the Si / SiN substrate coated with copper particles into the CVD growth chamber, and inject H into the reaction chamber 2 , to process the deposited metal film, the flow rate is 10sccm, the temperature is 950°C, the time is 40min, and the air pressure is 25Torr. Under the action of surface tension, the copper film is condensed into agglomerates, and an array of copper particles is formed on the substrate surface;

...

Embodiment 3

[0064] The realization steps of the present invention are as follows:

[0065] (1) Substrate Al of semiconductor device level 2 o 3 Sequentially use detergent, water, deionized water, analytically pure acetone, and analytically pure ethanol to ultrasonically clean for 5 minutes, then dry for 10 minutes;

[0066] (2) Substrate Al of semiconductor device level 2 o 3 In an argon (Ar) atmosphere, electron beam evaporation coating is carried out on copper under 1Torr vacuum, the electron beam voltage is 100kV, the current is 10mA, and the copper film thickness is 1μm;

[0067] (3) Put the substrate coated with copper particles into the CVD growth chamber, and inject H into the reaction chamber 2 , to process the deposited metal film, the flow rate is 20sccm, the temperature is 1000°C, the time is 60min, and the air pressure is 50Torr. Under the action of surface tension, the copper film is condensed into agglomerates, forming an array distribution of copper particles on the sur...

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Abstract

The invention belongs to the technical field of semiconductor preparation, and provides a method for self-assembly growth for micro-nano-scale graphene. The method comprises the following steps of: forming a transition metal film on a substrate by virtue of electron beam evaporation; controlling the thickness of the transition metal film by controlling the factors of flow, temperature, pressure and time of the electron beam evaporation for transition metals; naturally forming transition metal particle distribution on the substrate by virtue of the surface tension of the metal film; and then forming micro-nano-scale graphene on the formed transition metal particle distribution array via chemical vapour deposition (CVD). In the method, with the adoption of a transition metal self-assembly growth technology, the crystal lattice quality of the graphene material is effectively improved, and good contact between the graphene material and the substrate is formed; and the prepared micro-nano-scale graphene material can be used as a seed crystal for secondary covering and the electrode of a graphene device, as well as is strong in practicability and high in popularization and application values.

Description

technical field [0001] The invention belongs to the technical field of semiconductor manufacturing, and in particular relates to a method for self-assembly and growth of micro-nano-scale graphene. Background technique [0002] Graphene material is a carbon-based two-dimensional crystal. It is the lightest and thinnest material known so far. The single layer is only atomically thick. It has extremely excellent physical and chemical properties. Estimated to be over 2×10 5 cm 2 V -1 the s -1 , which is hundreds of times that of silicon), can be made into ultra-high-speed electronic devices; utilize super strong mechanical properties (Young's modulus is about 10 3 GPa), can develop ultra-light and super-strength composite materials; use its extremely high specific surface area and excellent gas-sensing characteristics, can develop high-sensitivity gas-sensitive detectors; use its extremely high transparency and flexibility, can be used Prepare highly flexible transparent el...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B25/00C30B29/02C01B31/02C01B32/186
Inventor 王东宁静柴正韩砀闫景东张进成郝跃
Owner XIDIAN UNIV
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