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Star sapphire wafer and preparation method thereof

A sapphire wafer and wafer technology, applied in chemical instruments and methods, single crystal growth, crystal growth and other directions, can solve the industrial application that cannot meet the irradiation conditions of large-size sapphire, is difficult to meet the needs of industrial production, and is difficult to scale. problems, to achieve the effect of improving mechanical shock resistance, high surface toughness, and stable mechanical properties

Inactive Publication Date: 2013-04-03
苏州巍迩光电科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the high cost and equipment of this method cannot meet the irradiation conditions of large-scale sapphire, and it is difficult to carry out large-scale industrial application
In summary, there are still obvious technical deficiencies in improving the mechanical toughness of sapphire wafers, and it is difficult to meet the requirements for industrial production.

Method used

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  • Star sapphire wafer and preparation method thereof
  • Star sapphire wafer and preparation method thereof
  • Star sapphire wafer and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0031] The preparation method of the star sapphire wafer of the present embodiment comprises the following steps:

[0032] ①Growth of titanium-doped sapphire wafer by guided mode method

[0033] The raw material is Al with a purity of 99.999%. 2 o 3 and spectroscopically pure TiO with a content of 3000ppm 2 , fully mixed and evenly pressed into a block on a hydraulic press, and then sintered into a crystal raw material block, and a titanium-doped sapphire wafer is grown by the guided mode method. The steps are: put the sintered raw material block into a molybdenum crucible with a guided mode mold , Put the molybdenum crucible and seed crystal into the guided mode furnace, the seed crystal is a sapphire crystal rod in the direction of [11-20], after sealing, vacuum the guided mode furnace to 1×10 -3 Pa, when the high-frequency induction coil continues to heat up to 2150°C, keep the temperature constant for 3 hours to melt the material and make the dopant evenly distributed i...

Embodiment 2

[0042] The preparation method of this embodiment is basically the same as that of Embodiment 1, the difference is that the characteristics of the growth of the titanium-doped sapphire wafer by the guided mode method are: the raw material adopts 99.999% Al 2 o 3 and spectroscopically pure TiO with a content of 2000ppm 2 , the growth rate of the guided mode method is controlled at 4-25mm / h, and after the crystal growth is completed, the wafer is taken out at a rate of 35°C / h down to room temperature. The characteristics of star processing are:

[0043] (1) Cut several pieces 110×60×5mm 3 Guided mode titanium-sapphire wafers with size (c) were annealed in an air furnace at 1650°C for 60 hours after optical polishing, so that all titanium ions in the crystal were oxidized into colorless tetravalent titanium ions.

[0044] (2) After the high-temperature annealing treatment of the titanium-doped sapphire wafer, the temperature was lowered to 1050°C in an air furnace and kept at ...

Embodiment 3

[0049] The preparation method of this embodiment is basically the same as that of Embodiment 1, the difference is that the characteristics of the growth of the titanium-doped sapphire wafer by the guided mode method are: the raw material adopts 99.999% Al 2 o 3 and spectroscopically pure TiO with a content of 4000ppm 2 , the growth rate of the guided mode method is controlled at 2-17mm / h, and after the crystal growth is completed, the wafer is taken out at a rate of 25°C / h down to room temperature. The characteristics of star processing are:

[0050] (1) Cut several pieces 110×60×5mm 3 Guided mode titanium-sapphire wafers with size (c) were annealed in an air furnace at 1750°C for 60 hours after optical polishing, so that all titanium ions in the crystal were oxidized into colorless tetravalent titanium ions.

[0051] (2) After the high-temperature annealing treatment of the titanium-doped sapphire wafer, the temperature was lowered to 950°C in an air furnace and kept at a...

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Abstract

The invention discloses a star sapphire wafer and a preparation method of the star sapphire wafer. Second phase sediment is formed as a star on a surface of a mode guiding method titanium-doped sapphire wafer after the mode guiding method titanium-doped sapphire wafer is thermally treated, so that needle-shaped sediment can be found under an optical microscope. The preparation method comprises the following steps of: firstly, using the mode guiding method to grow and obtain the titanium-doped sapphire wafer, subsequently treating the wafer by using a series of aerobic thermal treatment methods to obtain the star sapphire wafer in the following sub steps of firstly aerobically annealing at a high temperature and uniformly oxidizing titanium ions to tetravalent colorless titanium ions, then cooling to a low temperature near at 1000 DEG C, insulating and nucleating the sediment phase in the wafer, subsequently heating to a sediment phase development temperature, insulating and forming as a star to prepare the star sapphire wafer. The star sapphire wafer disclosed by the invention is even and transparent, so that the flashing needle-shaped sediment can be founded under the optical microscope; and the wafer has the advantages of higher surface breaking tenacity and stable mechanical property.

Description

technical field [0001] The invention belongs to the field of transparent optical crystal materials, in particular to a sapphire wafer and a preparation method thereof. Background technique [0002] Sapphire crystal has excellent comprehensive physical and chemical properties, such as ultra-high hardness and extremely low friction coefficient, second only to diamond in nature, excellent spectral transmission performance in a wide band (300-5000nm), and has high temperature resistance and corrosion resistance. , making sapphire wafers the first choice for modern high-performance window materials. However, when the sapphire wafer is used as a window material, under the action of external impact force, the wafer is prone to brittle cracking or brittle cracking, resulting in a significant decrease in the mechanical stability of the wafer. This is a major bottleneck in the commercial application of sapphire wafers as window materials, which limits its continuous development and a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/20C30B15/34
Inventor 胡克艳王庆国钱兵朱烨汪红卫
Owner 苏州巍迩光电科技有限公司
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