Terminal structure of high-voltage semiconductor device and method for manufacturing terminal structure

Abstract

The invention provides a terminal structure of a high-voltage semiconductor device and a method for manufacturing the terminal structure. The terminal structure comprises a semiconductor substrate of a first conductive type, a doped region of a second conductive type, an isolation dielectric layer, an extraction electrode and a field plate, wherein the doped region is positioned inside the semiconductor substrate, the isolation dielectric layer is positioned on a partial region of the surface of the semiconductor substrate, the extraction electrode is positioned on the surface of the doped region, the field plate is positioned on a partial region of the surface of the isolation dielectric layer, and the electrode is connected with the field plate. The terminal structure is characterized in that the isolation dielectric layer is provided with groove structures positioned below the field plate. The invention further provides the method for manufacturing the terminal structure of the high-voltage semiconductor device. The terminal structure and the method have the advantages that the groove structures are arranged on the dielectric layer and are positioned below the field plate, so that the distance from the field plate to the semiconductor substrate is shortened, a coupling effect between the field plate and the substrate is enhanced, electric-line-of-force absorption capacity of the field plate is effectively improved, the intensity of an electric field in the range of a region between two peak electric fields below outer boundaries of an original substrate and an original field plate is integrally improved, breakdown voltage is increased, and a process for manufacturing the terminal structure is simple.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a terminal structure for improving the withstand voltage of a lateral or vertical high-voltage semiconductor device by using a field plate and a preparation method thereof. Background technique [0002] With the continuous research and development of power semiconductor device modules, Gate Turn-Off Thyristor (GTO), Double-diffused Metal-Oxide-Semiconductor Field-Effect Transistor (Double-diffused MOSFET, DMOS) have appeared on the market. ), Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor, IGBT) and other power devices, their performance is getting better and better, and their applications are becoming more and more extensive. The sales of power integrated circuits show a sharp increase year by year, and have penetrated into many fields of the industrial and consumer markets. The performance index of a power device can be judged from multip...

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Problems solved by technology

However, this structure requires multiple depositions of dielectric layers and metal layers, photolithography, and etching, which brings a certain degree of complexity to the process preparation.

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