Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Terminal structure of high-voltage semiconductor device and method for manufacturing terminal structure

A terminal structure and semiconductor technology, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve problems such as the complexity of process preparation, and achieve the effects of increasing electric field strength, improving voltage resistance, and improving breakdown voltage

Active Publication Date: 2013-04-03
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this structure requires multiple depositions of dielectric layers and metal layers, photolithography, and etching, which brings a certain degree of complexity to the process preparation.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Terminal structure of high-voltage semiconductor device and method for manufacturing terminal structure
  • Terminal structure of high-voltage semiconductor device and method for manufacturing terminal structure
  • Terminal structure of high-voltage semiconductor device and method for manufacturing terminal structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] The terminal structure and manufacturing method of the high-voltage semiconductor device provided by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0029] The invention provides a terminal structure of a high-voltage semiconductor device. see figure 2 , figure 2 It is a structural schematic diagram of a preferred embodiment of a terminal structure of a high-voltage semiconductor device of the present invention. For ease of description, in this embodiment, specific P-type and N-type regions are included, and a P-type silicon substrate 1 is taken as an exam...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thickness rangeaaaaaaaaaa
Login to View More

Abstract

The invention provides a terminal structure of a high-voltage semiconductor device and a method for manufacturing the terminal structure. The terminal structure comprises a semiconductor substrate of a first conductive type, a doped region of a second conductive type, an isolation dielectric layer, an extraction electrode and a field plate, wherein the doped region is positioned inside the semiconductor substrate, the isolation dielectric layer is positioned on a partial region of the surface of the semiconductor substrate, the extraction electrode is positioned on the surface of the doped region, the field plate is positioned on a partial region of the surface of the isolation dielectric layer, and the electrode is connected with the field plate. The terminal structure is characterized in that the isolation dielectric layer is provided with groove structures positioned below the field plate. The invention further provides the method for manufacturing the terminal structure of the high-voltage semiconductor device. The terminal structure and the method have the advantages that the groove structures are arranged on the dielectric layer and are positioned below the field plate, so that the distance from the field plate to the semiconductor substrate is shortened, a coupling effect between the field plate and the substrate is enhanced, electric-line-of-force absorption capacity of the field plate is effectively improved, the intensity of an electric field in the range of a region between two peak electric fields below outer boundaries of an original substrate and an original field plate is integrally improved, breakdown voltage is increased, and a process for manufacturing the terminal structure is simple.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a terminal structure for improving the withstand voltage of a lateral or vertical high-voltage semiconductor device by using a field plate and a preparation method thereof. Background technique [0002] With the continuous research and development of power semiconductor device modules, Gate Turn-Off Thyristor (GTO), Double-diffused Metal-Oxide-Semiconductor Field-Effect Transistor (Double-diffused MOSFET, DMOS) have appeared on the market. ), Insulated Gate Bipolar Transistor (Insulated Gate Bipolar Transistor, IGBT) and other power devices, their performance is getting better and better, and their applications are becoming more and more extensive. The sales of power integrated circuits show a sharp increase year by year, and have penetrated into many fields of the industrial and consumer markets. The performance index of a power device can be judged from multip...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L29/40H01L21/28
Inventor 范春晖周伟
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More