Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Three-system organic photovoltaic device based on graphene quantum dots and preparation method of three-system organic photovoltaic device

A technology of graphene quantum dots and organic photovoltaic devices, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., and can solve the difficulty of obtaining conversion efficiency, power conversion limited energy level structure and charge in binary systems Transport capacity and other issues to achieve the effect of improving energy conversion efficiency, reducing preparation costs, and easy production control

Inactive Publication Date: 2013-04-03
FUZHOU UNIV
View PDF2 Cites 23 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the photoactive layers of organic photovoltaic devices currently being researched and reported are all binary structures, mostly using thiophene materials or polymers such as MEH-PPV, PDCDA, etc. as donors, and C60 and its derivatives as acceptors to form a typical diiso Its power conversion is limited by the energy level structure and charge transport capacity of the donor-acceptor material itself, and it is difficult to obtain a relatively large conversion efficiency with only a binary system.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-system organic photovoltaic device based on graphene quantum dots and preparation method of three-system organic photovoltaic device
  • Three-system organic photovoltaic device based on graphene quantum dots and preparation method of three-system organic photovoltaic device
  • Three-system organic photovoltaic device based on graphene quantum dots and preparation method of three-system organic photovoltaic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] According to the mass ratio of P3HT and PCBM 1:0.6~1:1, prepare a three-system mixed solution with a concentration of 16~24mg / ml, the mass ratio of P3HT and PCBM is 1:0.8, and the concentration of the prepared solution is 18mg / ml, that is, take 20mg P3HT and 16mg PCBM were dissolved in 2ml chlorobenzene containing graphene quantum dots at the same time, and magnetically stirred for 12 hours to form a ternary mixed solution.

[0031] The preparation steps of the three-system active layer organic photovoltaic device based on graphene quantum dots are as follows:

[0032] (1) In the atmospheric environment, the ITO transparent conductive glass is etched into strips with a width of 3mm, and then ultrasonically cleaned by acetone, alcohol, and deionized water for 20 minutes, and dried in a drying oven. The ITO transparent conductive glass is Formed by placing an anode on a glass substrate.

[0033] (2) Coat the etched and dried ITO sheet with PEDOT:PSS solution, the coating...

Embodiment 2

[0040] According to the mass ratio of P3HT and PCBM 1:0.6, it is configured into a three-system mixed solution with a concentration of 16mg / ml, that is, 20mg of P3HT and 12mg of PCBM are dissolved in 2ml of chlorobenzene containing graphene quantum dots at the same time, and magnetically stirred for 12 hours to form A ternary mixed solution with a solute concentration of 16 mg / ml. The device fabrication process was completed as described in Example 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Layer thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates a three-system organic photovoltaic device based on graphene quantum dots and a preparation method of the three-system organic photovoltaic device. According to the preparation method, the design limitation of an original binary organic photovoltaic device is broken through, and a spin coating technique and a thermal evaporation film plating technique are adopted on transparent conductive glass to reach the purpose of enhancing the device energy conversion efficiency. The three-system organic photovoltaic device uses a three-system coexistence system including an organic donor and an organic acceptor as well as the graphene quantum dots as an organic active layer, the donor and the acceptor are dissolved in chlorobenzene containing the graphene quantum dots in a certain proportion, and a three-system coexistence structure active layer is prepared only by only requiring the spin coating, so that the cost is low, the operation is simple and the conversion efficiency of the organic photovoltaic device is effectively improved.

Description

technical field [0001] The invention relates to a three-system organic photovoltaic device based on graphene quantum dots and a preparation method thereof. Background technique [0002] Among renewable energy sources, solar energy is an inexhaustible clean energy. Compared with other new energy sources such as water energy and wind energy, solar energy has the advantages of no geographical restrictions, no noise, and no pollution. At present, inorganic solar cells represented by silicon in solar cell devices have many advantages, such as rich content in nature, wide absorption spectrum, high energy conversion, etc., and have received more attention. However, single crystal inorganic semiconductor devices are expensive to manufacture, and are relatively fragile and inflexible, requiring a solid substrate support. At the same time, its narrow bandgap characteristics make the photocorrosion phenomenon serious and affect the service life of the battery. Due to its incomparable...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/42H01L51/48
CPCY02E10/549Y02P70/50
Inventor 李福山郭太良寇丽杰徐胜陈伟张永志吴朝兴
Owner FUZHOU UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com