Preparing method of silicon-carbon-nitrogen wave absorbing ceramic base composite materials

A composite material and ceramic-based technology, which is applied in the field of in-situ synthesis of SiCN ceramic substrates and coatings, can solve the problem of low absorbing performance of CFCC-SiC, achieve catastrophic damage, excellent mechanical properties, and strong bonding. Effect

Inactive Publication Date: 2013-04-24
NORTHWESTERN POLYTECHNICAL UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In order to avoid the deficiencies of the prior art, the present invention proposes a method for preparing a silicon-carbon-nitrogen absorbing ceramic-based composite material, which overcomes the shortcomings of the prior art in preparing CFCC-SiC with low absorbing performance, and at the same time facilitates the realization of the prepared Control of the composition, permeability, thickness and absorbing performance of the absorbing matrix

Method used

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  • Preparing method of silicon-carbon-nitrogen wave absorbing ceramic base composite materials
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  • Preparing method of silicon-carbon-nitrogen wave absorbing ceramic base composite materials

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Experimental program
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Effect test

Embodiment 1

[0029](1) Select porous Si 3 N 4 Ceramic substrate (22.86mm×10.16mm×2.3mm) as the base material;

[0030] (2) Hang the above base material on the supporting sample holder of the vacuum furnace, and the sample is in the center of the isothermal zone in the furnace;

[0031] (3) Prepare SiCN with uniform thickness on the substrate by CVD / CVI method, the precursor is SiCl 4 -CH 4 -NH 3 -H 2 - Ar, SiCl 4 、CH 4 with NH 3 The flow ratio is 2:2:1, the reaction temperature is 1100°C, the holding time is 8 hours, and the pressure in the furnace is 400Pa;

[0032] (4) Using the waveguide method to Si 3 N 4 -SiCN composite phase ceramics are tested for dielectric properties, and the test frequency is 8.2-12.4GHz. Complex permittivity ε r =ε’-ε”j, dielectric loss tgδ=ε” / ε’, where ε’ is the real part of the permittivity, and ε” is the imaginary part of the permittivity.

Embodiment 2

[0034] (1) The 2D plain woven carbon cloth with brand T300 was selected as the base material, and the carbon cloth was cut into a small sample with a plane size of 50mm×50mm, which was used as the first base material. At the same time choose porous Al 2 o 3 Ceramic substrate (22.86mm×10.16mm×2.3mm) as the second base material;

[0035] (2) Hang the above base material on the supporting sample holder of the vacuum furnace, and the sample is in the center of the isothermal zone in the furnace;

[0036] (3) Prepare SiCN with uniform thickness on the substrate by CVD / CVI method, the precursor is SiCl 4 -C 3 h 6 -NH 3 -H 2 - Ar, SiCl 4 、C 3 h 6 with NH 3 The flow ratio is 1:3:2, the reaction temperature is: 950°C, the holding time is: 16 hours, and the pressure in the furnace is: 400Pa;

[0037] (4) Using the waveguide method to Al 2 o 3 -SiCN composite phase ceramics are tested for dielectric properties, and the test frequency is 8.2-12.4GHz.

Embodiment 3

[0039] (1) Select high-purity, high-strength, high-modulus graphite, pre-process it according to the size of 20mm×10mm×2mm, grind and polish the surface of the formed substrate, and use it as the base material;

[0040] (2) Hang the above base material on the supporting sample holder of the vacuum furnace, and the sample is in the center of the isothermal zone in the furnace;

[0041] SiCN with uniform thickness was prepared on the substrate by CVD / CVI method, and the precursor was SiH 4 -C 2 h 2 -N 2 -H 2 -Ar, SiH 4 、C 2 h 2 with N 2 The flow ratio is 3:5:12, the reaction temperature is 1200°C, the holding time is 56 hours, and the furnace pressure is 1000Pa.

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Abstract

The invention relates to a preparing method of silicon-carbon-nitrogen (SiCN) wave absorbing ceramic base composite materials. The preparing method includes: adopting chemical vapor deposition (CAD) or chemical vapor infiltration (CAI) technology, using SiC14, SiHC13 or other chlorine silicon compounds or silicane as a silicon source, using CH4, C3H6, C2H2 or other alkane, olefin or alkyne as a carbon source, using NH3 or N2 as a nitrogen source, using H2 as a carrier gas and a reaction gas, using argon as a diluting gas, synthesizing SiCN on substrate materials in situ, and obtaining a SiCN matrix and a coating which are uniform and compact, without impurities, and with devisable compositions and wave absorbing properties. The preparing method overcomes the shortcoming that CFCC-SiC prepared by adopting the prior art is insufficient in wave absorbing performance, and simultaneously facilitates achieving control of compositions, permeability, thickness and wave absorbing performance of a wave absorbing matrix.

Description

technical field [0001] The invention relates to a preparation method of a silicon-carbon-nitrogen wave-absorbing ceramic-based composite material, in particular to in-situ synthesis of a SiCN ceramic matrix and coating on a base material by chemical vapor deposition / chemical vapor infiltration technology (hereinafter referred to as CVD / CVI). layer preparation method. Background technique [0002] With the development of modern high-tech, the problems of electromagnetic interference and electromagnetic compatibility caused by electromagnetic waves are becoming more and more serious. It not only causes interference and damage to electronic instruments and equipment, but also seriously restricts the international competitiveness of my country's electronic products and equipment, pollutes the environment, and endangers human health. , and the leakage of electromagnetic waves will also endanger national information security and military core secrets. Therefore, the development of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/80C04B35/584C04B38/06C04B35/622
Inventor 张立同殷小玮叶昉刘晓菲刘永胜成来飞薛继梅
Owner NORTHWESTERN POLYTECHNICAL UNIV
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