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Method of preparing fine grid on gallium nitride (GaN) materials by using electroplating technology

An electroplating process and fine grid technology, applied in the direction of semiconductor devices, can solve the problems of size and yield impact, and achieve the effects of avoiding low yield, improving stability, and increasing thickness

Active Publication Date: 2015-06-24
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the limitation of the lift-off process, when the gate length is small, the size and yield of the device gate cap are greatly affected

Method used

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  • Method of preparing fine grid on gallium nitride (GaN) materials by using electroplating technology
  • Method of preparing fine grid on gallium nitride (GaN) materials by using electroplating technology
  • Method of preparing fine grid on gallium nitride (GaN) materials by using electroplating technology

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] Preparation of metal-semiconductor (MS) structure GaN HEMT device fine gate:

[0039] 1. On a clean sapphire substrate AlGaN / GaN heterojunction sample, grow a thin SiN dielectric protective layer with a thickness of 70nm by plasma chemical deposition (PECVD);

[0040] 2. Spin-coat ZEP520 photoresist on the sample with a thickness of about 380nm through the coating table, write the grid foot pattern through the electron beam, and obtain the grid foot pattern by developing with the developer, and the minimum line width of the pattern is 140nm;

[0041] 3. Etch the SiN dielectric in the gate foot area of ​​the sample by reactive ion etching (RIE) equipment, and the etching gas is SF 6 ;

[0042] 4. Use the electron beam evaporation system to evaporate Ni / Au / Ti metal on the sample, where Ni metal is the Schottky contact metal with a thickness of 20nm, Au metal is the electroplating seed layer metal with a thickness of 100nm, and Ti metal is the protective layer metal with ...

Embodiment 2

[0049] Preparation of metal-insulator-semiconductor (MIS) structure GaN HEMT device fine gate:

[0050] 1. On a clean sapphire substrate AlGaN / GaN heterojunction sample, grow a thin SiN dielectric protective layer with a thickness of 70nm by plasma chemical deposition (PECVD);

[0051] 2. Spin-coat ZEP520 photoresist on the sample with a thickness of about 380nm through the coating table, write the grid foot pattern through the electron beam, and obtain the grid foot pattern by developing with the developer, and the minimum line width of the pattern is 140nm;

[0052] 3. Etch the SiN dielectric in the gate foot area of ​​the sample by reactive ion etching (RIE) equipment, and the etching gas is SF 6 ;

[0053] 4. Using magnetron sputtering equipment to sputter 10nm thick Al on the sample 2 o 3 Medium 9;

[0054] 5. Use the electron beam evaporation system to evaporate Ni / Au / Ti metal on the sample, where Ni metal is the Schottky contact metal with a thickness of 20nm, Au me...

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Abstract

The invention discloses a method of preparing fine grids on gallium nitride (GaN) materials by using an electroplating technology. The method of preparing the fine grids on the GaN materials by using the electroplating technology comprises the following steps: at first, based on a plasma chemical deposition method, a silicon nitride (SiN) thin medium protection layer grows on clean aluminium gallium nitride (AlGaN) / GaN materials, and then based on an electron beam lithography technology, grid feet graphics are defined. Grid feet area SiN is etched by a reactive ion etching (RIE) device. And then, barrier metal and an electroplate seed layer are evaporated by an e-beam evaporation system. A grid cover graph is defined by using the electron beam lithography technology, then a grid cover is prepared by using an electroplating technology, and finally, electron beam glue is removed. The method of preparing the fine grids on the GaN materials by using the electroplating technology has the advantages of greatly reducing the electric resistance of the grid and effectively improving the stability of the grid.

Description

technical field [0001] The invention relates to a method for preparing a fine grid on a GaN material by using an electroplating process, in particular to a method for combining an electron beam process, an electroplating process and a dry etching process on a GaN epitaxial material to realize a high-stability and low-resistance fine grid The preparation method belongs to the technical field of semiconductor device preparation. Background technique [0002] GaN HEMT (High Electron Mobility Transistor, High Electron Mobility Transistor) devices have the characteristics of high output power density, high withstand voltage and high operating frequency, and have broad application prospects in microwave high-power applications. At present, GaN HEMT devices and MMIC (Monolithic Microwave Integrated Circuit, monolithic microwave integrated circuit) already have many products below the X-band, while products above the X-band are still under development. In order to further increase ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28
Inventor 周建军孔岑陈堂胜
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD