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Si-B-C-N material applicable to high-temperature material and preparation method thereof

A high-temperature material, si-b-c-n technology, applied in the field of inorganic non-metallic materials, can solve problems such as performance that have not been reported, and achieve the effects of increased bulk density, increased high-temperature strength, and reduced porosity

Active Publication Date: 2014-09-17
JIANGSU TAIRUI REFRACTORY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But made of silicon carbide, metal silicon, B 4 The method of C and C nitriding firing has not been reported yet, and the relevant performance has not been reported.

Method used

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  • Si-B-C-N material applicable to high-temperature material and preparation method thereof
  • Si-B-C-N material applicable to high-temperature material and preparation method thereof
  • Si-B-C-N material applicable to high-temperature material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] The preparation steps of Si-B-C-N material are as follows:

[0024] In the first step, 10% of metal Si with a particle size of 1000 mesh to 1500 mesh, 80% of SiC with a particle size of 1000 mesh to 1500 mesh, and 8% of B with a particle size of 1000 mesh to 1500 mesh 4 C, 2% graphite and 5% of the total mass fraction of the binder are mixed together, ball milled for a total of 2 hours, 1 hour for each front and back;

[0025] The second step is to use a DY-30 hydraulic press 10MP to press the raw material powder into a green body, dry at 200°C for 1 hour, and stand at room temperature for 48 hours;

[0026] The third step is to place the green body in a nitriding furnace for nitriding sintering. The sintering rate is 8°C / min from 0°C to 900°C, 5°C / min from 900°C to 1050°C, and 2°C / min from 1050°C. To 1300°C, 5°C / min from 1300°C to 1400°C, hold at 1400°C for 4 hours, 2°C / min from 1400°C to 1050°C, and then naturally cool down to room temperature.

Embodiment 2

[0028] The preparation steps of Si-B-C-N material are as follows:

[0029] In the first step, 30% of metal Si with a particle size of 1000 mesh to 1500 mesh, 60% of SiC with a particle size of 1000 mesh to 1500 mesh, and 8% of B with a particle size of 1000 mesh to 1500 mesh 4 C, 2% graphite and 5% of the total mass fraction of the binder are mixed together, ball milled for a total of 2 hours, 1 hour for each front and back;

[0030] The second step is to use a DY-30 hydraulic press 10MP to press the raw material powder into a green body, dry at 200°C for 1 hour, and stand at room temperature for 48 hours;

[0031] The third step is to place the green body in a nitriding furnace for nitriding sintering. The sintering rate is 8°C / min from 0°C to 900°C, 5°C / min from 900°C to 1050°C, and 2°C / min from 1050°C. To 1300°C, 5°C / min from 1300°C to 1400°C, hold at 1400°C for 4 hours, 2°C / min from 1400°C to 1050°C, and then naturally cool down to room temperature.

Embodiment 3

[0033] The preparation steps of Si-B-C-N material are as follows:

[0034] In the first step, 50% of metal Si with a particle size of 1000 mesh to 1500 mesh, 40% of SiC with a particle size of 1000 mesh to 1500 mesh, and 5% of B with a particle size of 1000 mesh to 1500 mesh 4 C, 5% graphite and a binder accounting for 5% of the total mass fraction are mixed together, ball milled for 2 hours, 1 hour for each front and back;

[0035] The second step is to use a DY-30 hydraulic press 10MP to press the raw material powder into a green body, dry at 200°C for 1 hour, and stand at room temperature for 48 hours;

[0036] The third step is to place the green body in a nitriding furnace for nitriding sintering. The sintering rate is 8°C / min from 0°C to 900°C, 5°C / min from 900°C to 1050°C, and 2°C / min from 1050°C. To 1300°C, 5°C / min from 1300°C to 1400°C, hold at 1400°C for 4 hours, 2°C / min from 1400°C to 1050°C, and then naturally cool down to room temperature.

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Abstract

The invention relates to the field of inorganic nonmetallic materials, in particular to an Si-B-C-N material applicable to a high-temperature material and a preparation method thereof. The Si-B-C-N material applicable to the high-temperature material comprises the following components in mass percentage: 10-50% of metal Si, 40-80% of SiC, 5-10% of B4C and 0-5% of graphite. The preparation method comprises the following step: with silicon carbide, metal silicon, B4C and C powder with the particle size of 1,000-1,500 meshes as a raw material, nitriding and sintering at 1,450DEG C according to a specified sintering schedule to obtain the Si-B-C-N material applicable to the high-temperature material. The Si-B-C-N material applicable to the high-temperature material has the advantages that: by a high-temperature nitriding and sintering process, due to gas-gas, gas-liquid and gas-solid simultaneous sintering, whisker-like silicon nitride is produced and the high-temperature strength of the Si-B-C-N material is improved significantly; and due to introduction of N element, and the density of the Si-B-C-N material is increased and the porosity of the Si-B-C-N material is reduced.

Description

technical field [0001] The invention belongs to the field of inorganic non-metallic materials, and in particular relates to a Si-B-C-N material which can be used for high-temperature materials and a preparation method thereof. Background technique [0002] With the advancement of science and technology and the development of the times, after entering the 21st century, solar cells have been paid more and more attention by people. Silicon is widely used as the main material for making solar cells. Silicon crystals are pulled into single crystal silicon rods and then cut into silicon wafers for making chips. In the cutting process, 50%~52% of the crystalline silicon is lost in the form of silicon powder. Whether it is monocrystalline silicon for electronic grade or polycrystalline silicon for solar grade, it needs to be produced through a lot of energy consumption and high cost. If the high-purity silicon, polyethylene glycol and silicon carbide in the waste slurry can be eff...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/81C04B35/565C04B35/584C04B35/65
Inventor 薛文东白立雄孙加林李勇陈俊红
Owner JIANGSU TAIRUI REFRACTORY
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