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Method for manufacturing compound semiconductor

A manufacturing method, semiconductor technology, applied in semiconductor/solid state device manufacturing, chemical instruments and methods, from chemically reactive gases, etc.

Inactive Publication Date: 2013-05-01
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, it is known that bulk silicon carbide is very expensive, and also has the problem of being difficult to obtain a large-shaped wafer (for example, refer to Non-Patent Document 1

Method used

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  • Method for manufacturing compound semiconductor
  • Method for manufacturing compound semiconductor
  • Method for manufacturing compound semiconductor

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Embodiment

[0060] An example of a method for producing a compound semiconductor of the present invention will be described. In this embodiment, a group III-V nitride semiconductor is used as an example of a compound semiconductor.

[0061] First, through the oxygen (O 2 ) atmosphere, the thermal oxidation of the substrate including the single crystal silicon whose main surface is the (111) plane is carried out at a temperature of 900°C, and a 50nm silicon oxide film (SiO 2 membrane).

[0062] Then, B ions were implanted into the substrate under the following conditions. The substrate was not heated, and the acceleration voltage was set to 40keV, the injection angle was set to 7°, the rotation angle was set to 23°, and the surrounding atmosphere was set to 10 -4 The vacuum of Pa, the dose rate of B ion implantation is set to 1×10 15 ions / cm 2 under the conditions. In this way, a B ion-implanted layer is formed in the vicinity of the surface of the substrate.

[0063] Then, the base...

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Abstract

In a method for manufacturing a compound semiconductor, a silicon oxide film is formed on a substrate comprising silicon. Ion implantation is then performed in a region of the substrate (101), below the silicon oxide film. Heat treatment is performed to thereby form an underlayer (102) comprising monocrystalline silicon where ions have been implanted. Next, the underlayer (102) is exposed by removing the silicon oxide film. A GaN layer (105) is then formed on the underlayer (102).

Description

technical field [0001] The present invention relates to a method for manufacturing a compound semiconductor, and in particular to a method for manufacturing a compound semiconductor that can be applied to power devices and the like. Background technique [0002] III-V nitride semiconductors are based on the general formula B w al x Ga y In z N (where, w+x+y+z=1, 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1.), represented by aluminum (Al), boron ( B) A compound semiconductor composed of a compound of gallium (Ga), indium (In) and nitrogen (N). [0003] Group III-V nitride semiconductors represented by gallium nitride (GaN) have large band gaps, which are accompanied by high breakdown voltages, high electron saturation velocities, high electron mobility, and the formation of heterojunctions. advantages such as high electron concentration. Therefore, among III-V nitride semiconductors, research and development for application to short-wavelength light-emitting devices, high-output high-fre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205C30B25/18C30B29/38
CPCH01L21/0245H01L21/265H01L21/02458H01L21/0262C30B29/06C30B29/403H01L21/2652H01L21/02505C30B31/22H01L21/0254H01L21/26566
Inventor 铃木朝实良梅田英和石田昌宏上田哲三
Owner PANASONIC CORP