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Method of preparation of quantum cascading laser buried double-cycle grating with double holographic exposure

A quantum cascade, laser technology, applied in microlithography exposure equipment, optomechanical equipment, optical waveguide light guide, etc., can solve the problems of shortened reflection spectrum interval, low coupling coefficient, high coupling strength, etc., and achieve low operating costs. , the process steps are simple, the performance is stable

Active Publication Date: 2014-12-31
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, the cavity length of the quantum cascade laser is long (about 2mm), the coupling strength (the product of the coupling coefficient and the cavity length) is too large, and the laser works in an over-coupling state, which is not conducive to high-power output
[0007] Double-period gratings are used in the buried grating structure of quantum cascade lasers. It shows the grating coupling coefficient and the duty cycle of the large-period grating (Λ s / Λ L / 2 ) is directly proportional to, an excessively large duty cycle can achieve a lower coupling coefficient, but it will also shorten the interval of the comb reflection spectrum introduced by the large-period grating, making it difficult to achieve single-mode lasing

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  • Method of preparation of quantum cascading laser buried double-cycle grating with double holographic exposure
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  • Method of preparation of quantum cascading laser buried double-cycle grating with double holographic exposure

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Embodiment Construction

[0025] see figure 1 and Figure 2 to Figure 6 As shown, the present invention provides a method for preparing a quantum cascade laser buried double-period grating by double holographic exposure, comprising the following steps:

[0026] Step 1: Epitaxially grow the lower waveguide layer 2, the lower optical confinement layer 3, the laser active region 4 and the upper optical confinement layer 5 on the semiconductor substrate 1 in order to obtain a quantum cascade laser epitaxial chip with an optical confinement layer structure (see figure 2 );

[0027] The semiconductor substrate 1 is an n-type doped InP substrate with a thickness of 350 μm and a doping concentration of 1×10 17 cm -3 to 2×10 17 cm -3 ;

[0028] Wherein the lower waveguide layer 2 is an n-type doped InP material with a thickness of 1.3 μm to 1.5 μm and a doping concentration of 2.2×10 16 cm -3 to 3×10 16 cm -3 , the material of the lower optical confinement layer 3 and the upper optical confinement la...

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Abstract

The invention discloses a method of the preparation of a quantum cascading laser buried double-cycle grating with double holographic exposure. The method includes the following steps: step 1, subjecting a lower waveguide layer, a lower light limit layer, a laser active area and an upper light limit layer to epitaxial growth on a semiconductor substrate to obtain quantum cascading laser epitaxy chips with light limit layer structures; step 2, washing the epitaxy chips; step 3, evenly coating the surfaces of the epitaxy chips with photoresist; step 4, using the method of holographic exposure, subjecting the photoresist to two-time exposure which is of a corresponding dose and different in table included angle; step 5, developing and shaping the epitaxy chips after exposure treatment to obtain photoresist grating graphics; step 6, subjecting the epitaxy chips to hardening treatment, and then using a plasma resist remover to remove the residual photoresist; step 7, taking the photoresist grating graphics as masks to corrode the epitaxy chips, and transferring the grating graphics to the light limit layers; and step 8, using organic solvents to clean the photoresist grating graphics to prepare the double-cycle grating, and the preparation is completed.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a method for making a double-period grating buried in a quantum cascade laser. Background technique [0002] There are usually two methods for fabricating small-period (less than 1 μM) gratings in semiconductor optoelectronic devices: holographic exposure and electron beam exposure. [0003] The holographic exposure method uses two beams of coherent light with the same wavelength to be incident on the surface of the substrate at a certain angle to form light and dark interference fringes, and these interference patterns are recorded through the photoresist coated on the surface, and can be formed after development. A photoresist grating mask with a uniform period, and then the grating pattern is transferred to the substrate surface by an etching process (wet or dry etching). The holographic exposure system has simple equipment, low cost, and the exposure cy...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/13G03F7/00G03F7/20H01S5/12
Inventor 姚丹阳张锦川闫方亮刘俊岐王利军刘峰奇王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI