Method for manufacturing multilayer semiconductor ceramic capacitor, and multilayer semiconductor ceramic capacitor

Abstract

A method of manufacturing a SrTiO3 barrier layer type stacked semiconductor ceramic capacitor comprising: a step of producing calcined powder for producing a calcined powder by performing a calcination process after weighing a given amount of Sr compound, Ti compound and donor compound, and mixing and grinding them; a step of producing heat-treated powder for producing a heat-treated powder by mixing an acceptor compound with the calcined powder and heat-treating the mixture; a step of forming a stacked structure for producing ceramic green sheet by molding the heat-treated powder, and subsequently forming a stacked structure by alternately laminating an internal electrode layer and the ceramic green sheet; and a calcination step of performing a second calcination process under air atmosphere after performing a first calcination process to the stacked structure under reducing atmosphere, wherein the second calcination process is performed under temperature atmosphere of 450°C to 580°C. Hereby, a SrTiO3 barrier layer type stacked semiconductor ceramic capacitor is realized which has good absorption performance for ESD even if electrostatic capacitance has a low value such as 1nF.

Description

technical field [0001] The present invention relates to a method of manufacturing a multilayer semiconductor ceramic capacitor, and a multilayer semiconductor ceramic, and more specifically, relates to a method using SrTiO 3 A method for manufacturing a grain boundary insulation type multilayer semiconductor ceramic capacitor, and a multilayer semiconductor ceramic capacitor manufactured using the manufacturing method. Background technique [0002] With the development of electronic device technology in recent years, portable electronic devices such as mobile phones and notebook computers, and in-vehicle electronic devices mounted on automobiles have spread, and electronic devices have been required to be miniaturized and multifunctional. [0003] On the other hand, in order to achieve miniaturization and multifunctionalization of electronic equipment, a large number of semiconductor elements such as various ICs and LSIs are used, and the noise immunity of electronic equipme...

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Problems solved by technology

[0009] However, as described above, when the Zener diode 105 is provided in parallel with the bypass capacitor 104, not only the number of parts increases, which leads to high cost, but also the installation space must be secured, which may lead to an increase in the size of the device.

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