Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A light-emitting diode epitaxial structure

A technology of light-emitting diodes and epitaxial structures, which is applied to electrical components, circuits, semiconductor devices, etc., can solve the problems of reduced luminous efficiency of materials, less overlapping of electron and hole wave functions, red shift of luminous wavelength, etc. Concentration, the effect of improving the internal quantum luminous efficiency

Active Publication Date: 2016-02-10
INST OF PHYSICS - CHINESE ACAD OF SCI
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This polarization effect will generate a higher-intensity built-in electric field and spatially separate the positive load carriers, which will lead to a red shift in the emission wavelength. The more serious consequence is that the electron and hole wave functions overlap less, and the material The luminous efficiency is greatly reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A light-emitting diode epitaxial structure
  • A light-emitting diode epitaxial structure
  • A light-emitting diode epitaxial structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] The LED epitaxial structure is a GaN-based LED epitaxial structure, such as figure 2 As shown, the GaN-based LED epitaxial material structure includes a substrate 1, a nucleation layer 2 sequentially formed on the substrate, an undoped nitride buffer layer 3, an N-type electron injection layer 4, and multiple quantum wells. Source layer 5, and P-type hole injection layer 6.

[0054] Wherein, the substrate 1 includes but not limited to Si substrate, SiC substrate, sapphire substrate.

[0055] Optionally, the material of the nucleation layer 2 is GaN or Al x Ga 1-x N(0≤x≤0.2) composition, or a combination of both.

[0056] Optionally, the material of the undoped nitride buffer layer 3 is GaN, Al x Ga 1-x N, In x Ga 1-x One or more of N, 0≤x≤0.2.

[0057] Optionally, the material of the N-type electron injection layer 4 is N-type doped GaN, Al x Ga 1-x N, In x Ga 1-x One or more of N, 0≤x≤0.2.

[0058] In this GaN-based LED epitaxial structure, the basic peri...

Embodiment 2

[0074] The LED epitaxial structure is a quaternary AlGaInP-based LED. like image 3 As shown, the quaternary AlGaInP-based LED epitaxial structure includes a substrate P1, a GaAs buffer layer P2 sequentially formed on the substrate, a distributed Bragg reflection layer P3, an N-type electron injection layer P4, and a multi-quantum well active layer. Layer P5, P-type hole injection layer P6, and window layer P7.

[0075] Optionally, the substrate P1 is an N-type GaAs substrate with a thickness of 100-300 microns.

[0076] Optionally, the N-type GaAs buffer layer P2 on the substrate P1 has a doping concentration of 5E17~5E19cm -3 , the thickness is 0.1~0.5 microns.

[0077] Optionally, the distributed Bragg reflection layer P3 is N-type doped Al x Ga 1-x As / Al y Ga 1-y As, where, 0.5≤x≤1, 0.3≤y≤0.7, or (Al x Ga 1-x ) 0.5 In 0.5 P / (Al x1 Ga 1-x1 ) 0.5 In 0.5 P among them, 0.5≤x≤1, 0≤x1≤0.6, x>x1, or different periodic combinations of the above two,

[0078] Option...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a light emitting diode (LED) outer extending structure which comprises a multi-quantum trap active layer. The multi-quantum trap active layer comprises one or more basic periodic structures. Each basic periodic structure comprises a wide trap and a wide base which are adjacent to each other. The wide trap comprises a plurality of coupling traps. The plurality of coupling traps are respectively narrow traps. A narrow base is arranged between adjacent coupling traps so that tunneling coupling of an electron and an electron hole is achieved. Due to adoption of a composite structure of the wide trap and the narrow traps, two effects of capturing a large amount of carriers and high radiated recombination efficiency are achieved, and light emitting efficiency of an LED is remarkably improved. Due to tunneling modulation of the carriers, adjustment of multicolor LED wavelength and brightness in a single chip is achieved.

Description

technical field [0001] The invention relates to the field of light emitting diodes (Light Emitting Diode, LED for short), in particular to an epitaxial structure of a high internal quantum efficiency light emitting diode. Background technique [0002] The wide bandgap material represented by GaN is the third generation semiconductor after Si and GaAs. Due to the breakthrough of epitaxy technology, there was a rapid development during the 1990s. In the past two decades, GaN semiconductor lighting has become a global research and development topic, and LEDs account for a major share of the GaN market. [0003] Most of the existing commercialized white light LEDs use GaN-based blue light LEDs to excite yellow phosphors to emit white light. White LEDs realized in this way have disadvantages such as poor reliability, low color rendering index (about 60-80), and low lumen efficiency. The key to solving these problems is to prepare phosphor-free white LEDs based entirely on semi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06
Inventor 贾海强陈弘马紫光江洋王文新王禄李卫
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com