Method for processing microstructure on highly oriented pyrolytic graphite by using photolithography technique

A pyrolytic graphite, highly oriented technology, used in microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of high economic and time costs, and achieve the effect of mature process production line and high cost performance

Inactive Publication Date: 2013-05-29
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Through research, it is found that the current research is to use laser, ion beam, electron beam and othe

Method used

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  • Method for processing microstructure on highly oriented pyrolytic graphite by using photolithography technique
  • Method for processing microstructure on highly oriented pyrolytic graphite by using photolithography technique
  • Method for processing microstructure on highly oriented pyrolytic graphite by using photolithography technique

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Embodiment 1

[0028] In this embodiment, the method for processing microstructures on highly oriented pyrolytic graphite by photolithography process includes the following steps:

[0029] Step 1: Surface Planarization

[0030] Use CETR brand CP-4 chemical mechanical grinding machine to thin and grind the surface of HOPG, adjust the thickness of HOPG and ensure the parallelism of the upper and lower sides, and then polish it.

[0031] Step 2: Surface Cleaning

[0032] Ultrasonic specifications during ultrasonic cleaning are: use a frequency of 20,000 Hz and a power of 30w per liter of water, the same below. Soak HOPG in ultrapure water first, and ultrasonically clean it for 10 minutes; then soak HOPG in two liquids of acetone and ethanol successively, and use ultrasonic cleaning for 5 minutes in turn, and then use ultrapure water for 1 minute after washing; then put hydrogen peroxide, Hydrochloric acid and ultrapure water are prepared according to the volume ratio of 1:2:9, and heated to 8...

Embodiment 2

[0049] In this embodiment, the method for processing microstructures on highly oriented pyrolytic graphite by photolithography process includes the following steps:

[0050] Step 1; Surface Planarization

[0051] Use CETR brand CP-4 chemical mechanical grinding machine to thin and grind the surface of HOPG, test the thickness of HOPG every 5 minutes, and pay attention to ensure the parallelism of its upper and lower sides, and then polish it.

[0052] Step 2; Surface Cleaning

[0053] Ultrasonic specifications during ultrasonic cleaning are: use a frequency of 20,000 Hz and a power of 30w per liter of water, the same below. First soak HOPG in ultra-pure water (see Appendix 1 for the description of ultra-pure water in this patent), and ultrasonically clean it for 10 minutes; then soak HOPG in two liquids of acetone and ethanol successively, and then use ultrasonic cleaning for 5 minutes After washing, use ultrapure water for 1 minute; then prepare a lotion with hydrogen perox...

Embodiment 3

[0069] In this embodiment, the method for processing microstructures on highly oriented pyrolytic graphite by photolithography process includes the following steps:

[0070] Step 1; Surface Planarization

[0071] Use CETR brand CP-4 chemical mechanical grinding machine to thin and grind the surface of HOPG, adjust the thickness of HOPG and ensure the parallelism of the upper and lower sides, and then polish it.

[0072] Step 2; Surface Cleaning

[0073] Ultrasonic specifications during ultrasonic cleaning are: use a frequency of 20,000 Hz and a power of 30w per liter of water, the same below. First soak HOPG in ultra-pure water (see Appendix 1 for the description of ultra-pure water in this patent), and ultrasonically clean it for 10 minutes; then soak HOPG in two liquids of acetone and ethanol successively, and then use ultrasonic cleaning for 5 minutes After washing, use ultrapure water for 1 minute; then prepare a lotion with hydrogen peroxide, hydrochloric acid and ultra...

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Abstract

The invention discloses a method for processing a microstructure on highly oriented pyrolytic graphite by using a photolithography technique. The method comprises the following steps: 1, leveling the surface, namely grinding a highly oriented pyrolytic graphite (HOPG) surface by using a grinding machine, and polishing the surface; 2, cleaning the surface; 3, manufacturing a mask of the HOPG; 4, spinning a photoresist to serve as a mask of a SiO2 film or a metal film; 5, photoetching; 6, patterning the HOPG mask; 7, etching the HOPG; 8, removing the photoresist; and 9, removing the HOPG film. The method has the effective effects that the HOPG is directly processed by means of the common photoetching method for micro-electronics and micro-electromechanical systems (MEMS), and the method is mature in process production line, high in cost performance and suitable for directly processing patterns with the characteristic scale of more than 500nm on the HOPG.

Description

technical field [0001] This invention relates to the micromachining of highly oriented pyrolytic graphite (HOPG) by photolithographic techniques. Background technique [0002] In order to apply HOPG with excellent conductivity, diamagnetism, low hardness and good surface lubrication performance in the field of micro-nano research, many research institutions are conducting research on how to micro-machine HOPG. Through investigation, it is found that the current research is to use laser, ion beam, electron beam and other direct writing methods to pattern HOPG, and this kind of processing method is economical and time-consuming. Contents of the invention [0003] The invention provides a HOPG microstructure processing method with high cost performance by introducing photolithography technology. Let the HOPG with excellent conductivity, diamagnetism and low hardness be directly applied in the field of MEMS (micro-mechanical electronic system), and replace non- Silicon-based...

Claims

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Application Information

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IPC IPC(8): B81C1/00
Inventor 何洋王圣坤周岩杨儒元苑伟政
Owner NORTHWESTERN POLYTECHNICAL UNIV
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