32results about How to "Mature production line" patented technology

The invention relates to an infrared detector with a multilayer structure based on a CMOS (complementary metal oxide semiconductor) process, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using the CMOS process, and the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD (in-mold decoration) process and an RDL (redistribution layer) process; in the infrared detector with the multi-layer structure, a first columnar structure comprises at least one layer of solid columnar structure and / or at least one layer of hollow columnar structure, a second columnar structure comprises at least one layer of solid columnar structure and / or at least one layer of hollow columnar structure, at least one hole-shaped structure is formed in an absorption plate, and the hole-shaped structure at least penetrates through a dielectric layer in the absorption plate; and / or at least one hole-shaped structure is formed on a beam structure. The infrared detector is advantaged in that problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared detector are solved, the planarization degree of the absorption plate is optimized, thermal conductivity of the beam structure is reduced, and the performance of the infrared detector is optimized.

The invention relates to an infrared focal plane detector, a CMOS measurement circuit system and a CMOS infrared sensing structure in the infrared focal plane detector are both prepared by using a CMOS process, in the infrared focal plane detector, a first columnar structure is located between a reflecting layer and a beam structure, a second columnar structure is located between an absorption plate and the beam structure, the first columnar structure and the second columnar structure are solid columnar structures, and the infrared focal plane detector further comprises a metamaterial structure and / or a polarization structure. Through the technical scheme of the invention, the problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared focal plane detector are solved, the structural stability of the infrared focal plane detector is improved, the area of the absorption plate is increased, the infrared detection sensitivity of the infrared focal plane detector is improved, the absorption rate of the infrared focal plane detector to incident infrared electromagnetic waves is improved, the performance of the infrared focal plane detector is optimized, and the difficulty of optical design of the infrared focal plane detector is reduced.

The present invention relates to a CMOS infrared microbridge detector. A CMOS measurement circuit system and a CMOS infrared sensing structure in the infrared micro-bridge detector are both prepared by using a CMOS process, in the infrared micro-bridge detector, a first columnar structure is located between a reflecting layer and a beam structure, a second columnar structure is located between an absorption plate and the beam structure, the first columnar structure and the second columnar structure are hollow columnar structures, the absorption plate and the beam structure comprise electrode layers and at least two dielectric layers, and the first columnar structure and the second columnar structure at least comprise electrode layers. Through the technical scheme of the invention, the problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared focal plane detector are solved, the thermal conductance of the first columnar structure and the second columnar structure is reduced, the area of the absorption plate is increased, and the infrared detection sensitivity of the infrared micro-bridge detector is improved.

The invention relates to an infrared detector pixel and an infrared detector based on a CMOS process, the pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure located on the CMOS measurement circuit system, and the CMOS measurement circuit system and the CMOS infrared sensing structure are prepared by adopting the CMOS process; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures which are located on the CMOS measurement circuit system, the columnar structures are located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; the columnar structures adopt a non-metal solid column, the side wall of the non-metal solid column is made of a metal material, and a space surrounded by the side wall is filled with a non-metal material. According to the technical scheme, the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved; meanwhile, the columnar structures adopt the non-metal solid column so that the structural stability can be improved, and the detection performance can be improved.

The invention relates to an uncooled tuning type infrared detector, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using a CMOS process, the CMOS infrared sensing structure is directly prepared on the CMOS measuring circuit system, and at least one patterned metal interconnection layer is arranged between a reflecting layer and a suspended micro-bridge structure. The patterned metal interconnection layer and the reflecting layer are electrically insulated, and the patterned metal interconnection layer is used for adjusting a resonance mode of the infrared detector. According to the detector, problems of low performance, low pixel scale, low yield, poor consistency and the like of a traditional MEMS process infrared detector are solved, the infrared absorption rate of the infrared detector is effectively improved, the infrared absorption spectrum of the infrared detector is widened, and the infrared absorption spectrum of the infrared detector is increased.

The invention relates to an infrared detector mirror image pixel and an infrared detector based on a CMOS process, the mirror image pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure, the CMOS measurement circuit system and the CMOS infrared sensing structure are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures, the reflecting layer, the infrared conversion structure and the columnar structures are located on the CMOS measurement circuit system, the columnar structures are located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; and the reflecting plate arranged on the same layer as the supporting base is etched. According to the technical scheme, the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved.

The invention relates to a micro-bridge structure infrared detector, a CMOS measurement circuit system and a CMOS infrared sensing structure in the micro-bridge structure infrared detector are both prepared by using a CMOS process, the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD process and an RDL process, and a columnar structure in the micro-bridge structure infrared detector is a hollow columnar structure. The columnar structure at least comprises an electrode layer, and each of the absorption plate and the beam structure at least comprises a first dielectric layer, an electrode layer and a second dielectric layer; and the infrared detector with the micro-bridge structure further comprises a metamaterial structure and / or a polarization structure. According to the technical scheme, the problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield, poor in consistency and the like are solved, the absorption rate of the infrared detector of the micro-bridge structure to incident infrared electromagnetic waves is improved, the performance of the infrared detector of the micro-bridge structure is optimized, and the difficulty of optical design of the infrared detector with the micro-bridge structure is reduced.

The invention relates to a preparation method of a solid focal plane detector and the solid focal plane detector. The preparation method comprises the following steps of preparing a CMOS measurement circuit system and a CMOS infrared sensing structure by adopting a CMOS process, wherein the preparation of the CMOS infrared sensing structure comprises the substeps of preparing a first metal interconnection layer on top-layer metal of a CMOS measurement circuit system by adopting an RDL process or taking the top-layer metal of the CMOS measurement circuit system as a first metal interconnection layer; preparing an interconnection column by adopting a through hole process; and depositing a second metal interconnection layer above the interconnection column, etching the second metal interconnection layer to form a patterned electrode structure so as to form a beam structure and a part of the absorption plate, depositing a second dielectric layer, and etching the second dielectric layer to form a patterned dielectric layer so as to form the absorption plate, wherein the second dielectric layer is a heat-sensitive dielectric layer. Through the technical scheme of the invention, the problems of low performance, low pixel scale, low yield and poor consistency of the solid focal plane detector of a traditional MEMS process are solved, and the performance of the solid focal plane detector is optimized.

The invention relates to a preparation method of a CMOS infrared detector with a solid column and the infrared detector. The preparation method comprises the following steps of preparing a CMOS measurement circuit system and a CMOS infrared sensing structure by adopting a CMOS process, wherein the preparation of the CMOS infrared sensing structure comprises the substeps of preparing a first metal interconnection layer on top-layer metal of a CMOS measurement circuit system by adopting an RDL process or taking the top-layer metal of the CMOS measurement circuit system as the first metal interconnection layer; preparing a first interconnection column by adopting a through hole process and a CMP planarization process; depositing a second metal interconnection layer above the first interconnection column to form a beam structure; depositing a third metal interconnection layer to form a second interconnection column; and depositing a fourth metal interconnection layer and a second dielectric layer to form the absorption plate. Through the technical scheme of the invention, the problems of low performance, low pixel scale, low yield and poor consistency of a traditional MEMS process infrared detector are solved, and the performance of the infrared detector is optimized.

The invention relates to an infrared detector pixel based on a CMOS process and a preparation method thereof, and the infrared detector pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure on the CMOS measurement circuit system which are prepared by adopting a full CMOS process; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures which are located on the CMOS measurement circuit system, the columnar structures are located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; the CMOS infrared sensing structure further comprises a medium protection layer and an etching barrier layer which are located on the reflecting layer. The dielectric protection layer surrounds the side surface of the columnar structure, and the etching barrier layer at least covers the corner angle position of the dielectric protection layer. The problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved. Besides, the structural stability of the infrared detector is improved.

The invention relates to a single-layer infrared focal plane detector, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared focal plane detector are both prepared by using a CMOS process, and the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD process and an RDL process. The columnar structure in the CMOS infrared sensing structure comprises at least one layer of solid columnar structure and / or at least one layer of hollow columnar structure, the sacrificial layer is used for enabling the CMOS infrared sensing structure to form a hollow structure, the material for forming the sacrificial layer comprises at least one of silicon, germanium or germanium-silicon, the sacrificial layer is corroded by adopting an etching gas and adopting a post-CMOS process. The etching gas comprises at least one of xenon fluoride, chlorine gas, bromine gas, carbon tetrachloride and chlorofluorohydrocarbon. According to the technical scheme, the problems that a traditional MEMS technology infrared focal plane detector is low in performance, low in pixel scale, low in yield, poor in consistency and the like are solved.

The invention relates to an infrared detector pixel and an infrared detector based on a CMOS process, the infrared detector pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure located on the CMOS measurement circuit system, at least one closed release isolation layer is arranged on the CMOS measurement circuit system, and the at least one closed release isolation layer is located in the CMOS infrared sensing structure; the infrared conversion structure comprises an absorption plate and a plurality of beam structures, in at least part of the orthographic projection area of the absorption plate, the closed release isolation layer located in the CMOS infrared sensor structure is etched, at least one closed release isolation layer is located on the interface between the CMOS measurement circuit system and the CMOS infrared sensor structure, and the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved, and the release difficulty of the sacrificial layer is reduced by the closed release isolation layer in the CMOS infrared sensing structure.

The invention relates to an infrared detector pixel based on a CMOS (Complementary Metal Oxide Semiconductor) process and an infrared detector, and the pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure on the CMOS measurement circuit system, and is prepared by adopting a full CMOS process; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures which are located on the CMOS measuring circuit system, the columnar structures are located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measuring circuit system through the columnar structures and the supporting base; the infrared conversion structure comprises an absorption plate and a plurality of beam structures, and the absorption plate is used for converting infrared signals into electric signals and is electrically connected with the corresponding columnar structures through the corresponding beam structures; the infrared detector pixel further comprises a reinforcing structure. And the reinforcing structure is used for enhancing the connection stability between the columnar structure and the beam structure. Therefore, the problems of low performance, low pixel scale, low yield and the like of a traditional MEMS process infrared detector are solved; and the structural stability is improved.

The invention relates to an infrared detector based on a CMOS process, a CMOS measurement circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system; the CMOS manufacturing process of the CMOS infrared sensing structure comprises a metal interconnection process, a through hole process and an RDL process, the CMOS infrared sensing structure comprises at least two metal interconnection layers, at least two dielectric layers and a plurality of interconnection through holes, the dielectric layers at least comprise a sacrificial layer and a heat-sensitive dielectric layer, and the heat-sensitive dielectric layer comprises a heat-sensitive material of which the resistance temperature coefficient is greater than a set value; the CMOS infrared sensing structure comprises a resonant cavity formed by a reflecting layer and a heat-sensitive dielectric layer, a suspended micro-bridge structure for controlling heat transfer and a columnar structure with electric connection and supporting functions. According to the technical scheme, the problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield and the like are solved, and the performance of the infrared detector is optimized.

The invention relates to an infrared detector pixel and an infrared detector based on a CMOS process, and the infrared detector pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure on the CMOS measurement circuit system which are prepared through a full CMOS process; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure, a plurality of columnar structures, a dielectric protection layer and an etching barrier layer, wherein the dielectric protection layer and the etching barrier layer are located on the reflecting layer. The columnar structures comprise at least two layers of stand columns which are arranged in an overlapped mode and located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; each layer of stand columns can be at least one of solid metal columns, non-metal solid columns or hollow columns; the dielectric protection layer surrounds the side surface of the columnar structures, and the etching barrier layer at least covers the corner angle position of the dielectric protection layer. Therefore, the problems of low performance, low pixel scale, low yield and the like of a traditional MEMS process infrared detector are solved; and the detection sensitivity and the structural stability are improved.

The invention relates to an infrared detector pixel and an infrared detector based on a CMOS process, and the pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure on the CMOS measurement circuit system which are prepared by adopting a full CMOS process; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures, and the columnar structures are located between the reflecting layer and the infrared conversion structure; the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the columnar structures and the supporting base; the infrared conversion structure comprises an absorption plate and a beam structure, and the absorption plate is electrically connected with the columnar structures through the beam structure; the columnar structures comprise at least two layers of stand columns, and each layer of stand columns can be at least one of solid metal columns, non-metal solid columns or hollow columns. The pixel further comprises a reinforcing structure which is used for enhancing the connection stability between the columnar structures and the infrared conversion structure. The problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved. The sensitivity is high and the stability is good.

The disclosure relates to an infrared detector mirror image element and an infrared detector based on CMOS technology. The mirror image element includes: CMOS measurement circuit system and CMOS infrared sensing structure are both prepared by CMOS technology, and directly prepared above the CMOS measurement circuit system CMOS infrared sensing structure; the infrared conversion structure is electrically connected to the CMOS measurement circuit system through the columnar structure and the supporting base; the infrared conversion structure includes an absorption plate and a beam structure located on the same layer, and the absorption plate converts the infrared signal into an electrical signal and passes through the beam structure It is electrically connected with the columnar structure; the absorption plate includes a metal structure on one side close to or away from the CMOS measurement circuit system, and at least part of the reflection plate is located in the orthographic projection of the metal structure. Through the technical proposal of the present disclosure, the problems of low performance, low pixel scale and low yield rate of infrared detectors in traditional MEMS technology are solved.

The invention relates to an uncooled titanium oxide CMOS infrared detector, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using a CMOS process, the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD process and an RDL process, and a columnar structure in the infrared detector is a hollow columnar structure. The absorption plate comprises a first dielectric layer, an electrode layer, a heat-sensitive dielectric layer and a second dielectric layer, the electrode layer and the heat-sensitive dielectric layer are arranged on the same layer, the electrode layer is made of titanium, and the heat-sensitive dielectric layer is made of titanium oxide; or, the electrode layer is made of highly-doped titanium oxide, and the heat-sensitive dielectric layer is made of titanium oxide. According to the technical scheme, the problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield, poor in consistency and the like are solved, and the preparation technology of the infrared detector can be simplified.

The invention relates to an infrared detector pixel and an infrared detector based on a CMOS process. The infrared detector pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure located on the CMOS measurement circuit system. At least one airtight release isolation layer is arranged on the CMOS measurement circuit system, and the at least one airtight release isolation layer is located in the CMOS infrared sensing structure; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures, wherein the reflecting layer, the infrared conversion structure and the columnar structures are located on the CMOS measuring circuit system. The infrared conversion structure comprises an absorption plate and a plurality of beam structures which are arranged on the same layer, the absorption plate comprises a thermosensitive layer and is perpendicular to the extending direction of the beam structures, and the width of each beam structure is smaller than or equal to 0.3 micrometer. The problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved. The closed release isolation layer in the CMOS infrared sensing structure reduces the release difficulty of the sacrificial layer and improves the detection sensitivity of the infrared detector.

The invention relates to an infrared detector mirror image pixel and an infrared detector based on a CMOS process, the mirror image pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure which are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a first columnar structure, and the infrared conversion structure is electrically connected with the CMOS measuring circuit system through the first columnar structure and the supporting base; the beam structure is located on the side, close to the CMOS measurement circuit system, of the absorption plate, the absorption plate comprises a metal structure close to or away from the side, close to or away from the CMOS measurement circuit system, of the CMOS measurement circuit system, and at least part of the reflection plate is located in the orthographic projection of the metal structure. According to the technical scheme, the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved.

The invention relates to an adaptive temperature adjustable non-refrigeration infrared detector, a CMOS measurement circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using a CMOS process, the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system, an electrode layer in an absorption plate comprises a plurality of electrode structures, the plurality of electrode structures divide the thermosensitive dielectric layer into at least two thermistors, the CMOS measurement circuit system selects two electrode structures to obtain electric signals output by the two electrode structures, and the CMOS measurement circuit system selects two different electrode structures to obtain the electric signals output by the two electrode structures, so that the temperature-sensitive structure connected to the CMOS measuring circuit system corresponds to at least two normal-temperature equivalent resistors with different resistance values, and the temperature-sensitive structure comprises at least one thermistor; and the two electrode structures output positive and negative signals respectively. According to the technical scheme, the problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield, poor in consistency and the like are solved, and the environment temperature adaptability of the infrared detector is optimized.

The invention relates to an infrared detector mirror image pixel based on a CMOS process and an infrared detector, the mirror image pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure which are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared above the CMOS measurement circuit system; the CMOS infrared sensing structure comprises a reflecting layer and an infrared conversion structure, the infrared conversion structure is electrically connected with the CMOS measuring circuit system through the supporting base, and a material forming the thermosensitive layer comprises at least one of amorphous silicon, titanium oxide, vanadium oxide or titanium vanadium oxide; a resonant cavity is not formed between the CMOS measurement circuit system and the infrared conversion structure, or the formed resonant cavity cannot reflect the infrared light to the infrared conversion structure, or the infrared conversion structure reflects the infrared light. According to the technical scheme, the problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield and the like are solved.

This openness involves an infrared detector mirror image based on CMOS technology.CMOS infrared sensor structure; CMOS infrared sensor structure includes reflex layers and infrared conversion structures. The infrared conversion structure is connected to the CMOS measurement circuit system by supporting the base.At least one type in titanium oxide is not formed between the CMOS measurement circuit system and the infrared conversion structure, or the resonant cavity formed cannot reflect infrared light to the infrared conversion structure, or the infrared conversion structure reflects infrared light.Through this open technical solution, the problem of low performance, low pixel scale, and low yield of infrared detectors of traditional MEMS process are solved.

The invention relates to an infrared detector mirror image pixel and an infrared detector based on CMOS process, the mirror image pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure which are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system; the CMOS infrared conversion structure is electrically connected with the CMOS measurement circuit system through first columnar structures and a supporting base; the beam structure is located on the side, close to the substrate, of an absorption plate, insulated second columnar structures and a patterned metal structure are arranged between the absorption plate and the beam structure, at least part of the reflection plate is located in the orthographic projection area of the patterned metal structure, and gaps are formed between the patterned metal structure and the beam structure and between the patterned metal structure and the absorption plate in the direction perpendicular to the substrate. According to the technical scheme, the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved.

The invention relates to an infrared detector pixel and an infrared detector based on a CMOS process, the infrared detector pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure located on the CMOS measurement circuit system, the CMOS measurement circuit system and the CMOS infrared sensing structure are both prepared by adopting the CMOS process, at least one closed release isolation layer is arranged on the CMOS measurement circuit system, and the at least one closed release isolation layer is located in the CMOS infrared sensing structure; the CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures, wherein the reflecting layer, the infrared conversion structure and the columnar structures are located on the CMOS measurement circuit system. The infrared conversion structure comprises an absorption plate and a plurality of beam structures, at least part of the closed release isolation layer in the orthographic projection area of the absorption plate is etched, and the reflecting plate is in electric contact with the grounded supporting base so that the problems of low performance, low pixel scale, low yield and the like of a traditional MEMS process infrared detector are solved; the closed release isolation layer in the CMOS infrared sensing structure reduces the release difficulty of the sacrificial layer and improves the detection sensitivity of the infrared detector.

The disclosure relates to an infrared detector with a microbridge structure. The CMOS measurement circuit system and the CMOS infrared sensing structure in the infrared detector are both prepared by CMOS technology, and the CMOS manufacturing technology includes metal interconnection technology, through-hole technology, IMD technology and RDL process, in the infrared detector with multi-layer structure, the first columnar structure includes at least one layer of solid columnar structure and / or at least one layer of hollow columnar structure, and the second columnar structure includes at least one layer of solid columnar structure and / or at least one layer of hollow columnar structure A columnar structure, the sacrificial layer is used to form a hollow structure for the CMOS infrared sensing structure, the material constituting the sacrificial layer includes at least one of silicon, germanium or silicon germanium, the sacrificial layer is etched by using an etching gas and a post-CMOS process, and the The etching gas includes at least one of xenon fluoride, chlorine gas, bromine gas, carbon tetrachloride and chlorofluorocarbons. Through the technical solution disclosed in the present disclosure, the problems of low performance, low pixel scale, low yield and poor consistency of traditional MEMS process infrared detectors are solved.

The invention relates to an infrared detector based on a CMOS process. The infrared detector comprises pixels, each pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure directly prepared on the CMOS measurement circuit system, and the CMOS measurement circuit system and the CMOS infrared sensing structure are prepared by adopting the CMOS process; each CMOS infrared sensing structure comprises a reflecting layer, an infrared conversion structure and a plurality of columnar structures, each columnar structure comprises at least two layers of columns which are arranged in an overlapped mode and is located between the reflecting layer and the infrared conversion structure, the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measuring circuit system through the columnar structures and the supporting base; the infrared conversion structure comprises an absorption plate and a plurality of beam structures, and the absorption plate is electrically connected with the columnar structure through the corresponding beam structures; at least two infrared detector pixels share at least one columnar structure; each pixel of the infrared detector further comprises a reinforcing structure. The reinforcing structures are used for enhancing the connection stability between the columnar structures and the infrared conversion structures. The problems that a traditional MEMS technology infrared detector is low in performance, low in pixel scale, low in yield and the like are solved.

The invention relates to an infrared detector mirror image pixel and an infrared detector based on a CMOS process, the mirror image pixel comprises a CMOS measurement circuit system and a CMOS infrared sensing structure which are both prepared by using the CMOS process, and the CMOS infrared sensing structure is directly prepared on the CMOS measurement circuit system; the CMOS infrared conversion structure comprises a reflecting layer, an infrared conversion structure and a first columnar structure, the reflecting layer comprises a reflecting plate and a supporting base, and the infrared conversion structure is electrically connected with the CMOS measurement circuit system through the first columnar structure and the supporting base; the beam structure is located on the side, close to the CMOS measurement circuit system, of the absorption plate, the CMOS infrared conversion structure further comprises a patterned metal structure arranged corresponding to the beam structure, and at least part of the reflecting plate is located in the orthographic projection of the patterned metal structure. According to the technical scheme, the problems that a traditional MEMS process infrared detector is low in performance, low in pixel scale, low in yield and the like are solved.

The invention relates to an aspirin preparation, in particular to aspirin-contained enteric capsules. The aspirin-contained enteric capsules are characterized in that the capsules comprise mini-pillsand coating, wherein the mini-pills contain aspirin, an adhesive, a diluent, a wetting agent, a disintegrant, a stabilizing agent and a surfactant, and the coating mainly comprises two isolating layers and an enteric coat layer. A mature production line is provided, the aspirin-contained enteric capsules are particularly suitable for industrialized production, the prepared aspirin-contained enteric capsules are good in stability and high in dissolution rate, the quality of the aspirin-contained enteric capsules is basically consistent with that of original developed enteric tablet products, and fluctuation of plasma concentration can be effectively improved.

The invention relates to a CMOS infrared detector with a solid column, a CMOS measuring circuit system and a CMOS infrared sensing structure in the infrared detector are both prepared by using a CMOS process, the CMOS manufacturing process comprises a metal interconnection process, a through hole process, an IMD process and an RDL process, a columnar structure in the infrared detector is a solid columnar structure, the columnar structure comprises a solid structure, the side wall of the solid structure is in contact with the sacrificial layer, and the material forming the solid structure comprises at least one of tungsten, copper or aluminum. Through the technical scheme disclosed by the invention, the problems of low performance, low pixel scale, low yield, poor consistency and the like of a traditional MEMS process infrared detector are solved, the structural stability of the infrared detector is improved, the miniaturization of the infrared detector is favorably realized, and the preparation difficulty of the infrared detector is favorably reduced.