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Preparation method of titanium-doped zinc oxide transparent conducting thin film

A technology of transparent conductive film and zinc oxide, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., to achieve the effect of small size and uniform heating

Inactive Publication Date: 2013-06-26
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

ZnO-based transparent conductive film is a transparent conductive film that has developed rapidly in recent years, such as aluminum-doped zinc oxide (AZO), which not only has high visible light transmittance and good conductivity, but also has abundant sources of materials and low prices. Solar cells, liquid crystal displays, anti-static and other fields have broad application prospects, but there is still a gap from large-scale industrial applications

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0012] Embodiment 1, the purity is ZnO and TiO more than 99.99% 2 The mixed powder is manually ground or mechanically milled for more than 4 hours, so that the particle size reaches the range of 300-500 nm, and mixed uniformly, the mixed powder is put into the trough of the powder tablet press, and kept under the pressure of 40 MPa for 3 minutes. Make a cylindrical target blank with a diameter and thickness of 1.4 cm and 2.1 mm, respectively, put the target blank into a corundum crucible and cover it, then place it in a single crystal furnace, and control the temperature at 800 o C was sintered for 12 hours to obtain a titanium-doped zinc oxide ceramic target with a diameter of 1.3 cm and a thickness of 2 mm. Ordinary glass slides were used as substrates, which were cleaned successively by ultrasonic waves in pure water, alcohol and acetone for 15 minutes each. Put the fired titanium-doped zinc oxide target into the copper crucible of the electron beam evaporation coating equ...

Embodiment 2

[0013] Embodiment 2, the purity is ZnO and TiO more than 99.99% 2 The mixed powder is manually ground or mechanically milled for more than 4 hours, so that the particle size reaches the range of 300-500 nm, and mixed uniformly, the mixed powder is put into the trough of the powder tablet press, and kept under a pressure of 40 MPa for 3 minutes. Make a cylindrical target blank with a diameter and thickness of 1.4 cm and 2.1 mm, respectively, put the target blank into a corundum crucible and cover it, then place it in a single crystal furnace, and control the temperature at 1150 o C was sintered for 12 hours to obtain a titanium-doped zinc oxide ceramic target with a diameter of 1.3 cm and a thickness of 2 mm. Ordinary glass slides were used as substrates, which were cleaned successively by ultrasonic waves in pure water, alcohol and acetone for 15 minutes each. Put the fired titanium-doped zinc oxide target into the copper crucible of the electron beam evaporation coating equi...

Embodiment 3

[0014] Embodiment 3, the purity is ZnO and TiO more than 99.99% 2 The mixed powder is manually ground or mechanically milled for more than 4 hours, so that the particle size reaches the range of 300-500 nm, and mixed uniformly, the mixed powder is put into the trough of the powder tablet press, and kept under a pressure of 40 MPa for 3 minutes. Make a cylindrical target blank with a diameter and thickness of 1.4 cm and 2.1 mm respectively, put the target blank into a corundum crucible and cover it, then place it in a single crystal furnace, and control the temperature at 1200 o C was sintered for 12 hours to obtain a titanium-doped zinc oxide ceramic target with a diameter of 1.3 cm and a thickness of 2 mm. Ordinary glass slides were used as substrates, which were cleaned successively by ultrasonic waves in pure water, alcohol and acetone for 15 minutes each. Put the fired titanium-doped zinc oxide target into the copper crucible of the electron beam evaporation coating equip...

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Abstract

The invention belongs to the technical field of transparent conducting thin films, and in particular relates to a preparation method of a titanium-doped zinc oxide transparent conducting thin film. The preparation method comprises the following steps of: firstly, manually grinding or mechanically milling ZnO and TiO2 powder serving as raw materials, uniformly mixing, feeding the mixed powder into a powder tablet machine so as to make a columnar target blank material, putting the target blank material into a corundum crucible, covering and putting into a single crystal furnace, sintering for 8-12 hours at 800-1200 DEG C, so as to obtain a titanium-doped zinc oxide ceramic target material, putting the sintered titanium-doped zinc oxide ceramic target material into a crucible of electron beam evaporation coating film equipment, vacuuming till the bottom is in a vacuum state, carrying out electron beam evaporation film coating, and controlling the electron beam current and the deposition time so as to obtain the titanium-doped zinc oxide transparent conducting thin film. The preparation method has the characteristics of simplicity and control easiness in operation, short time, high deposition velocity and the like, and has bright application prospects in the fields of solar batteries and transparent electronic devices.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material preparation, in particular to a method for preparing a titanium-doped zinc oxide transparent conductive film. Background technique [0002] Transparent conductive oxide (TCO) films are widely used in flat panel displays, photovoltaic cells, touch screens, building glass, and anti-static , anti-microwave radiation and other fields, especially in recent years with the development of flat panel displays (FPD) and photovoltaic cells, the market demand for TCO films has greatly increased. Tin-doped indium oxide (ITO) has always been the most commercially used transparent conductive material, but the reserves of metal indium are limited and cannot meet the growing market demand. Therefore, exploring alternative materials for ITO thin films has become a trend in the research of transparent conductive thin films in the future. . [0003] At present, people are using various methods includ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/30C23C14/08
Inventor 黄延伟
Owner HANGZHOU DIANZI UNIV
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