Silicon carbide quantum dots and preparation method thereof

Abstract

The invention discloses a silicon carbide quantum dot and a preparation method thereof. The silicon carbide quantum dot is spherical in shape, the particle diameter is normally distributed within the range of 2.5nm to 5.5nm, the excitation wavelength is 250nm to 400nm, and the emission wavelength is 350nm~450nm, the fluorescence peaks are 380nm, 400nm and 420nm. The preparation method of silicon carbide quantum dots comprises: mixing polymethylsilane and toluene solvent at a mass ratio of 0.5 to 10:600, then heating up to 500°C to 600°C in an autoclave, keeping the temperature for 1h to 5h, and then cooling down naturally The resulting toluene suspension containing silicon carbide quantum dots is filtered, and then the filtrate is freeze-dried or centrifuged at high speed to obtain silicon carbide quantum dots. The particle size distribution of silicon carbide quantum dots of the invention is concentrated, the luminescence is strong and stable, the preparation method is simple and easy, and the environment is friendly.

Description

technical field [0001] The invention relates to a nanoscale luminescent material and a preparation method thereof, in particular to a silicon carbide quantum dot and a preparation method thereof. Background technique [0002] Quantum dots, also known as semiconductor nanocrystals, are inorganic nanoparticles composed of hundreds to thousands of atoms. Photosensitive devices, nanoelectronics, active catalysis, biomedicine and other fields have broad application prospects. At present, most of the common quantum dots are II-VI or III-V semiconductor materials, among which CdX (X=S, Se, Te) is mainly studied, but there are many problems in this kind of quantum dots: for example, cadmium ions have a large Toxicity, poor luminescence stability under acidic conditions, etc. At the same time, because the bandgap of II-VI or III-V semiconductor materials is too small, only a small part of the quantum dots produced can emit blue-violet fluorescence, which makes the quantum dots have...

AI Technical Summary

Problems solved by technology

At present, most of the common quantum dots are II-VI or III-V semiconductor materials, among which CdX (X=S, Se, Te) is mainly studied, but there are many problems in this kind of quantum dots: for example, cadmium ions have a large Toxicity, poor luminescence stability under acidic conditions, etc.

However, the preparation methods of SiC quantum dots reported so far are few, and the preparation steps are cumbersome. The electrochemical corrosion method is mainly used, and strong acid is needed as the etchant, which will cause pollution to the environment.

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