Preparation method of CuInSe2 with a chalcopyrite structure and CuIn1-xGazSe2 nano particles

A cuin1-xgaxse2 and nanoparticle technology is applied in the field of preparation of CuInSe2 and CuIn1-xGaxSe2 nanoparticles with chalcopyrite structure, which can solve problems such as difficulty in mass production, and achieve simple operation, strong repeatability and short synthesis cycle. Effect

Inactive Publication Date: 2013-07-24
UNIV OF SHANGHAI FOR SCI & TECH
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  • Description
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Problems solved by technology

The nanoparticles synthesized by hot injection method are small, uniform and well dispersed, but this method is difficult to mass-produce due to the limitation of monomer injection rate and mass transfer, and the stock solution needs to be prepared first, which is very important for improving the production efficiency of solar cells. , cost reduction is unfavorable

Method used

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  • Preparation method of CuInSe2 with a chalcopyrite structure and CuIn1-xGazSe2 nano particles
  • Preparation method of CuInSe2 with a chalcopyrite structure and CuIn1-xGazSe2 nano particles
  • Preparation method of CuInSe2 with a chalcopyrite structure and CuIn1-xGazSe2 nano particles

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Effect test

Embodiment 1

[0027] The implementation process of Embodiment 1 of the present invention is as follows:

[0028] (1). Weigh 170mg CuCl 2 2H 2 O (1 mmol) and 293 mg InCl 3 4H 2 O (1 mmol) was placed in a 50 ml three-necked flask, 15 ml of oleylamine (OLA) was added, heated to 60 °C and magnetically stirred for 3 h, after the solution was clarified, it was naturally cooled to room temperature to obtain a transparent yellow metal precursor solution.

[0029] (2). Weigh 158 mg of elemental Se powder (2 mmol) into another 50 ml three-necked flask, add 10 ml of oleylamine (OLA), stir magnetically at room temperature for 0.5 h, and oscillate ultrasonically for 10 min to obtain a Se powder precursor solution.

[0030] (3). Mix the metal precursor solution and the Se powder precursor solution, and place the resulting mixed solution in a three-neck flask connected to the Schlenk line.

[0031] (4). At room temperature, vacuumize the three-necked flask for 5 minutes, then heat the resulting mixed ...

Embodiment 2

[0039] The reaction temperature in the step (4) of embodiment two is 230 o C, the reaction time is 1h, and other steps are the same as the corresponding steps of Example 1.

[0040] figure 2 For the CuInSe prepared by the method of embodiment two 2 XRD patterns of nanoparticles.

[0041] Such as figure 2 Shown, CuInSe 2 All diffraction peaks of nanoparticles are related to chalcopyrite CuInSe 2 The standard card JCPDF No.40-1487 corresponds very well, indicating that the CuInSe made by the preparation method of Example 2 2 The nanoparticles have a chalcopyrite crystal structure and are very crystalline.

[0042] image 3 For the CuInSe prepared by the method of embodiment two 2 SEM pattern of nanoparticles.

[0043] Such as image 3 Shown, CuInSe 2 The dispersion of nanoparticles is very good, and the particle size is between 50-300 nm.

Embodiment 3

[0045] The implementation process of embodiment three of the present invention is as follows:

[0046] (1). Weigh 119.3mg CuCl 2 2H 2 O (0.7 mmol) and 205.3 mg InCl 3 4H 2 O (0.7mmol) and put in a 50ml three-necked flask, add 15ml oleylamine (OLA), heat to 50 O C and magnetically stirred for 4 h, after the solution was clear, it was naturally cooled to room temperature to obtain a transparent yellow metal precursor solution.

[0047] (2). Weigh 110.5mg of elemental Se powder (1.4mmol) into another 50ml three-necked flask, add 10ml of oleylamine, stir magnetically at room temperature for 1h, and oscillate ultrasonically for 10min to obtain a Se powder precursor solution.

[0048] (3). Mix the metal precursor solution and the Se powder precursor solution, and place the resulting mixed solution in a three-neck flask connected to the Schlenk line.

[0049] (4). At room temperature, vacuumize the three-necked flask for 5 minutes, then heat the resulting mixed solution with an ...

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Abstract

The invention relates to a preparation method of CuInSe2 with a chalcopyrite structure and CuIn1-xGazSe2 nano particles. Firstly, a metal precursor solution containing Cu+ or Cu2+, In3 or Ga3+ cation and a Se powder precursor solution are respectively prepared, and then the metal precursor solution and the Se powder precursor solution are mixed and uniformly stirred, and the solution is heated to 200-285 DEG C. with high purity nitrogen protection and reacted for 0.5-2 hours, and then the CuInSe2 or CuIn1-xGazSe2 nano particle solution is obtained, after high speed centrifugation, cleaning and drying steps, the CuInSe2 or CuIn1-xGazSe2 nano particles are obtained. The CuInSe2 or CuIn1-xGazSe2 nano particle has the advantages of chalcopyrite crystal structure, good dispersibility and high phase purity, and the element ingredient approaches to the stoichiometric ratio, thereby laying a foundation for preparing a high conversion efficiency film solar energy battery. The invention employs cheap metal salt and selenium powder as precursors, and employs a simple one-pot synthetic method, and has the advantages of simple operation, short synthesis period, strong repeatability without injection, and is suitable for mass production.

Description

technical field [0001] The present invention relates to a CuInSe with a chalcopyrite structure 2 and CuIn 1-x Ga x Se 2 Preparation method of nanoparticles. technical background [0002] CuInSe 2 and CuIn 1-x Ga x Se 2 belong The group compound is a direct band gap semiconductor material with a chalcopyrite crystal structure at low temperature. CuInSe 2 and CuIn 1-x Ga x Se 2 Has a high absorption coefficient (10 5 cm -1 ), good photovoltaic stability, and high solar cell conversion efficiency (20.3%), so it has received widespread attention and is considered to be a promising solar cell absorber material. [0003] At present, the absorber layer of high-efficiency solar cells is usually prepared by vacuum method. The vacuum method has many disadvantages such as high preparation cost, complicated process, and difficulty in realizing large-scale commercial production. In order to make solar energy truly become a pillar energy source, low-cost preparation t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B19/00B82Y30/00
CPCY02P20/133
Inventor 韩朝霞张大伟洪瑞金陶春先凌进中黄元申陈勤妙庄松林
Owner UNIV OF SHANGHAI FOR SCI & TECH
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