Plasma processing apparatus

Abstract

A plasma processing apparatus comprises an upper electrode 42, a lower electrode, a grounding member 61 provided above the upper electrode 42 via an insulating member 60; and a DC power supply for applying a DC voltage to the upper electrode 42. Gas diffusion rooms 54 and 55 communicating with a gas supply opening 53 formed at a lower surface of the upper electrode 42 are formed in the upper electrode 42 and a gas flow path 62 communicating with the gas diffusion rooms 54 and 55 is formed in the insulating member 60. A bent portion 63 for allowing a gas within the gas flow path to flow in a direction having at least a horizontal component is formed at the gas flow path 62 such that an end of the gas flow path 62 cannot be seen from the other end thereof when viewed from the top.

Description

technical field [0001] The present invention relates to a plasma processing device for performing plasma processing on an object to be processed. Background technique [0002] Parallel plate type (capacitive coupling type) plasma processing apparatus as an apparatus for performing microprocessing such as etching and film formation on a target object such as a semiconductor wafer (hereinafter referred to as "wafer") by using the action of plasma , Inductively coupled plasma processing devices and microwave plasma processing devices have been put into practical use. [0003] Among them, in the parallel plate type plasma processing apparatus, high-frequency power is applied to at least one of the upper electrode and the lower electrode disposed oppositely, and the gas is excited by the electric field energy to generate plasma, and the generated discharge is used to generate plasma. Plasma is used to microfabricate the object to be processed. Such a parallel plate type plasma ...

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Problems solved by technology

However, when the aspect ratio increases as the etching progresses, cations are deposited at the bottom of the etching hole, and the etching surface becomes positively charged. Therefore, there is a problem that the cations that contribute greatly to etching are Repelled and changed in the hole, the shape of the etched hole will be changed and distorted

[0010] However, if the applied voltage of the negative direct current voltage is increased, there is a problem that an abnormal discharge occurs near the upper electrode, and the reaction product generated by the discharge falls on the upper surface of the wafer, thereby becoming a semiconductor device product. Reasons for lower yield

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