Inks and processes to make a chalcogen-ontaining semiconductor

A chalcogen, ink technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, ink and other directions, can solve problems such as high reactivity and high toxicity

Inactive Publication Date: 2013-07-24
EI DU PONT DE NEMOURS & CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, hydrazine is a highly reactive and potentially explosive solvent which is described as "very toxic" in the Merck Index

Method used

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  • Inks and processes to make a chalcogen-ontaining semiconductor
  • Inks and processes to make a chalcogen-ontaining semiconductor

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0141] SnS and ZnS nanoparticles (prepared as described above) were each dispersed in THF at a concentration of 500 mg nanoparticles / mL THF. Each suspension was sonicated for 30 minutes in a bath sonicator, followed by 10 minutes with an ultrasonic probe. The ZnS suspension was passed through a 1.0 micron syringe filter (Whatman, 1.0 micron GF / Bw / GMF). Pass the SnS suspension through a 2.7 micron syringe filter (Whatman, 2.7 micron GF / Dw / GMF). Cu nanoparticles (41.9 mg; purified as described above), 0.1540 mL of ZnS suspension, and 0.3460 mL of SnS suspension were then mixed, and the resulting mixture was sonicated in a bath sonicator for 20 min. The ink was stirred vigorously just before deposition. The ink was spin-coated on the Mo-coated glass substrate by spinning at 1000 rpm for 20 s followed by 1500 rpm for 10 s. then in N 2 , the sample was annealed in a tube furnace at 550°C for 1 hour, and then in sulfur / N 2 annealing at 500°C for 1 hour. The annealed samples we...

example 1

[0142] Example 1A : A coated substrate was prepared according to the method of Example 1. The surface profile was collected at 5 different locations using a Tencor profilometer, and the data was processed with a 25 micron low pass filter, showing an average height of the coated substrate of 1.0715 microns, an average Ra of 460 nm, and an average Wa of 231 nm.

example 2

[0144] A CZTS precursor ink was prepared by dispersing commercial Sn nanoscale activated powder (99.7%, 176.5 mg) from Sigma Aldrich and TEGO IL P51P (10.2 mg) in toluene (2258 mg). The dispersion was then sonicated for 15 minutes in an ultrasonic bath. Then CuS particles (298.9 mg) and ZnS particles (274.6 mg) were added to the Sn powder suspension. The mixture was further sonicated for 30 minutes in an ultrasonic bath. The CZTS precursor dispersion was spin-coated onto a molybdenum-coated glass substrate. Ink is applied to the substrate. The sample was then spun at 200 rpm for 10 seconds, followed by 350 rpm for 30 seconds, and finally 600 rpm for 10 seconds. The coated substrates were then allowed to air dry at room temperature. Then in sulfur / N 2 Under atmosphere, the coated substrates were annealed in a tube furnace at 500°C for 2 hours. XRD results indicated that CZTS was the major phase in the annealed films.

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Abstract

The invention relates to an ink composition in admixture. The ink composition in admixture comprises a vehicle; a copper source selected from the group consisting of elemental copper-containing particles, copper-containing chalcogenide particles, and 10 mixtures thereof; a zinc source selected from the group consisting of: elemental zinc-containing particles, zinc-containing chalcogenide particles, and mixtures thereof; and a tin source selected from the group consisting of: elemental tin-containing particles, tin-containing chalcogenide particles, and mixtures thereof; wherein at least one of the copper, zinc or tin sources comprises elemental copper-containing, elemental zinc-containing, or elemental tin-containing particles.

Description

[0001] This patent application claims the benefit of US Provisional Patent Application 61 / 416013, filed November 22, 2010, which is incorporated herein by reference. technical field [0002] The present invention relates to methods of preparing chalcogen-containing semiconductors comprising copper, zinc and tin. Background technique [0003] Thin-film photovoltaic cells typically use semiconductors such as CdTe or copper indium gallium sulfide / selenide (CIGS) as energy absorbing materials. Due to the toxicity of cadmium and the limited availability of indium, alternatives are sought. Copper zinc tin sulfide (Cu 2 ZnSnS 4 or "CZTS") has a bandgap energy of about 1.5eV and a large absorption coefficient (about 10 4 cm -1 ), making it a promising replacement for CIGS. [0004] The most common method for preparing CZTS thin films is to deposit elemental or binary precursors such as Cu, Zn, Sn, ZnS, and SnS using vacuum technology and then chalcogenize the precursors. The r...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/02H01L31/032H01L31/0216
CPCH01L29/26H01L21/02568C23C18/1229C23C18/1204H01L31/0326H01L21/02628Y02E10/50H01L21/0237C23C18/1275C09D11/52H01L31/02H01L31/0216H01L31/032
Inventor 曹炎炎M·S·小丹尼L·K·约翰逊卢美军I·马拉约维基
Owner EI DU PONT DE NEMOURS & CO
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