Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Microwave doped sintering method of high-density and low-resistance ITO (Indium Tin Oxide) target

A sintering method and low-resistance technology, which is applied in the field of ITO target preparation, can solve the problems of long production cycle and low production efficiency, achieve fast heating speed, increase production efficiency, and improve microstructure and performance.

Inactive Publication Date: 2013-08-07
SOUTHWEST JIAOTONG UNIV
View PDF2 Cites 13 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to prepare a high-density ITO target in an air atmosphere, researchers prepared an ITO target with a relative density of 92% by doping zinc oxide and using a traditional sintering method in an air atmosphere, although the ITO target with this density cannot It meets the requirements of industrial use, but it has made great progress in preparing ITO targets with a relative density greater than 90% in an air atmosphere
However, there are still shortcomings in this method. It takes more than ten hours for the preparation process of the target from the temperature rise to the end of the heat preservation. The production cycle is too long and the production efficiency is low.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Microwave doped sintering method of high-density and low-resistance ITO (Indium Tin Oxide) target
  • Microwave doped sintering method of high-density and low-resistance ITO (Indium Tin Oxide) target
  • Microwave doped sintering method of high-density and low-resistance ITO (Indium Tin Oxide) target

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Weigh 0.8g of polyvinyl butyral, add it into 10ml of absolute ethanol, stir and dissolve to form 8% polyvinyl butyral binder; weigh 0.2g of zinc oxide powder and 4g of ITO powder (the mass of zinc oxide powder is 5% of the mass of ITO powder) into the ball mill tank, and add an appropriate amount of absolute ethanol (the mass ratio of the volume of absolute ethanol to the powder is 4:1), and ball mill for 4 hours; after the powder and absolute ethanol are mixed evenly , add the binder solution prepared above into the ball mill tank (the mass ratio of the volume of the binder solution to the powder is 3:8), and continue the ball milling for 8 hours to mix the binder and the powder evenly; the powder after ball milling Dry it in an oven at 120°C and grind it; after grinding, put the powder into a stainless steel mold with a diameter of 20mm and press it into a mold with a loading pressure of 300MPa; calcinate the formed compact in a muffle furnace at 500°C for 2 hours to r...

Embodiment 2

[0023]Weigh 0.8g of polyvinyl butyral, add it into 10ml of absolute ethanol, stir and dissolve into 8% polyvinyl butyral binder; weigh 0.32g of zinc oxide powder and 4g of ITO powder (the mass of zinc oxide powder It is 8% of the mass of ITO powder) into the ball mill tank, and add an appropriate amount of absolute ethanol (the mass ratio of the volume of absolute ethanol to the powder is 4:1), and ball mill for 4 hours; after the powder and absolute ethanol are mixed evenly , add the binder solution prepared above into the ball mill tank (the mass ratio of the volume of the binder solution to the powder is 3:8), and continue the ball milling for 8 hours to mix the binder and the powder evenly; the powder after ball milling Dry it in an oven at 120°C and grind it; after grinding, put the powder into a stainless steel mold with a diameter of 20mm and press it into a mold with a loading pressure of 300MPa; calcinate the formed compact in a muffle furnace at 500°C for 2 hours to r...

Embodiment 3

[0025] Weigh 0.8g of polyvinyl butyral, add it to 10ml of absolute ethanol, stir and dissolve into 8% polyvinyl butyral binder; weigh 0.4g of zinc oxide powder and 4g of ITO powder (the mass of zinc oxide powder is 10% of the mass of ITO powder) into the ball mill tank, and add an appropriate amount of absolute ethanol (the mass ratio of the volume of absolute ethanol to the powder is 4:1), and ball mill for 4 hours; after the powder and absolute ethanol are mixed evenly , add the binder solution prepared above into the ball mill tank (the mass ratio of the volume of the binder solution to the powder is 3:8), and continue the ball milling for 8 hours to mix the binder and the powder evenly; the powder after ball milling Dry it in an oven at 120°C and grind it; after grinding, put the powder into a stainless steel mold with a diameter of 20mm and press it into a mold with a loading pressure of 300MPa; calcinate the formed compact in a muffle furnace at 500°C for 2 hours to remov...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Resistivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a microwave doped sintering method of ITO (Indium Tin Oxide). A high-density and low-resistance ITO target is prepared through doping of metallic oxide and nitride by a microwave sintering method. The microwave doped sintering method comprises the following technological conditions: polyvinyl butyral (PVB) serves as an adhesive agent, and can improve the shaping property of powder in a pressing process, improve compaction strength and prevent a sample from cracking after demoulding, and the relative density of the obtained ITO target product ranges from 95% to 99% and the resistivity of the product ranges from 2.0*10<-4> omega*cm to 3.5*10<-4> omega*cm. Compared with the prior art, the product obtained by the microwave doped sintering method is high in density, low in resistivity and uniform in grain size distribution. The adopted technology does not require oxygen, and thus the industrial production safety is improved; and required equipment is simple, and thus the production cost is reduced.

Description

technical field [0001] The invention relates to the field of preparation of ITO targets, in particular to a method for preparing high-density and low-resistance ITO targets. Background technique [0002] The ITO target is the most important material for preparing ITO transparent conductive film, which is the transparent conductive film with the best comprehensive performance and has a series of unique properties: lower resistivity (about 10 -4 Ω cm); visible light transmittance can reach more than 85%; ultraviolet absorption rate is greater than 85%; infrared reflectivity is greater than 80%; microwave attenuation rate is greater than 85%; good processing performance, easy to etch; Wear-resistant and chemical corrosion resistance. Therefore, ITO targets are widely used in the electronic field, especially in liquid crystal display (LCD), touch screen, solar cell transparent electrode, thin film transistor (TFT) manufacturing and infrared radiation mirror coating to form a co...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C04B35/457C04B35/622
Inventor 汪建新陈迪姜崇喜孙红亮冯波鲁雄翁杰屈树新卢晓英段可
Owner SOUTHWEST JIAOTONG UNIV
Features
  • Generate Ideas
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com