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Preparation and application for silicon quantum dots

A technology of silicon quantum dots and silicon wafers, which is applied in the nanometer field, can solve problems such as high cost of raw materials, silicon quantum dots fall off into the solution, unfavorable chemical modification of biomolecular labeling reactions, etc., and achieve the effect of cheap raw materials and improved efficiency

Inactive Publication Date: 2013-08-07
ANHUI UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] In summary, there are currently three main methods for preparing fluorescent silicon quantum dots. One is to use a silicon wafer as an anode and obtain silicon quantum dots by electrochemical corrosion. It falls off into the solution, which is not conducive to the subsequent chemical modification and labeling reaction of biomolecules; the second is to use silicon-containing inorganic compounds as silicon sources (such as silicon tetrachloride or silicon tetrabromide), and use chemical reduction methods to prepare fluorescent silicon quantum point, this type of compound is very easy to hydrolyze, the reaction is difficult to be well controlled, and the cost of raw materials is high; the third is to use silicon micropowder or silicon nano-fragments as raw materials to prepare fluorescent silicon quantum dots by chemical etching, although some The particle size can be controlled, but after the acquisition of silicon quantum dots and the completion of the subsequent chemical modification reaction, it is difficult to separate the product from the reactant, because the particle size of silicon quantum dots is too small to pass through filtration, centrifugation, etc. and other methods to achieve effective separation

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  • Preparation and application for silicon quantum dots
  • Preparation and application for silicon quantum dots
  • Preparation and application for silicon quantum dots

Examples

Experimental program
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Embodiment 1

[0039] (1) Clean the planar silicon and immerse it in a mixed aqueous solution of 5.0M hydrofluoric acid and 0.005M silver nitrate for chemical etching reaction. The reaction temperature is controlled at 50°C and the reaction time is 60 minutes;

[0040] (2) Take out the product obtained in step (1), soak it in 33% nitric acid aqueous solution for 20 minutes to remove the remaining Ag, wash it with a large amount of deionized water, and dry it with nitrogen to obtain porous silicon;

[0041] (3) Immerse the porous silicon obtained in step (2) into a mixed aqueous solution composed of 1M hydrofluoric acid and 1M nitric acid to react, control the reaction temperature at 60°C, and the reaction time is 180min to obtain the silicon quantum dot precursor;

[0042] (4) The silicon quantum dot precursor obtained in step (3) was immersed in 5M hydrofluoric acid, the temperature was controlled at 50°C, and the reaction time was 5 minutes to prepare a silicon quantum dot precursor contain...

Embodiment 2

[0048] (1) Same as step (1) of Example 1;

[0049] (2) Same as step (2) of Example 1;

[0050] (3) Immerse the porous silicon obtained in step (2) into a mixed aqueous solution composed of 4M hydrofluoric acid and 1M nitric acid to react, control the reaction temperature at 50°C, and the reaction time is 90min to obtain the silicon quantum dot precursor;

[0051] (4) Same as step (4) of Example 1;

[0052] (5) Same as step (5) of Example 1;

[0053] (6) Same as step (6) of Example 1;

[0054] (7) Same as step (7) of Example 1;

[0055] (8) Same as step (8) of Example 1.

Embodiment 3

[0057] (1) Same as step (1) of Example 1;

[0058] (2) Same as step (2) of Example 1;

[0059] (3) Immerse the porous silicon obtained in step (2) into a mixed aqueous solution composed of 8M hydrofluoric acid and 1M nitric acid to react, control the reaction temperature at 30°C, and the reaction time is 30min to obtain the silicon quantum dot precursor;

[0060] (4) Same as step (4) of Example 1;

[0061] (5) Same as step (5) of Example 1;

[0062] (6) Same as step (6) of Example 1;

[0063] (7) Same as step (7) of Example 1;

[0064] (8) Same as step (8) of Example 1.

[0065] The present invention uses relatively cheap silicon wafers as raw materials, adopts chemical etching method, first prepares porous silicon, and then prepares silicon quantum dot precursors on the silicon wafer substrate, and the etching reaction is carried out at low temperature (not exceeding 60°C) and normal Press down, and after ultrasonic treatment, silicon quantum dots can be obtained. Prope...

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Abstract

The invention discloses preparation for silicon quantum dots, and a fluorescence labelling method for dopamine molecules by virtue of the silicon quantum dots, which belong to the field of nanotechnology. The method comprises the following steps of: preparing porous silicon at first, obtaining a silicon quantum dot precursor via chemical etching, and obtaining the silicon quantum dots after ultrasonic treatment, wherein the silicon quantum dot precursor can be reacted with hydrofluoric acid to generate surface Si-H, and then sequentially reacted with undecylenic acid, N-hydroxysuccinimide and dopamine, and finally ultrasonically treated to obtain the dopamine molecules which are fluorescence-labelled by the silicon quantum dots. Compared with the prior art, in the method disclosed by the invention, silicon slices are used as raw materials, and a chemical etching method is adopted, so that fluorescence labelling for the dopamine molecules by the silicon quantum dots can be realized at a low temperature and under the normal pressure; and because a chemical modification reaction is performed on the surface of the silicon quantum dot precursor, separation between the product and reactants can be realized via solvent soaking and washing, thus simplifying the separation operation. The method can also be used for fluorescence labelling for other biomolecules containing primary amine group by the silicon quantum dots.

Description

technical field [0001] The invention belongs to the field of nanotechnology, and in particular relates to a preparation of silicon quantum dots and a silicon quantum dot fluorescent labeling method for dopamine molecules. Background technique [0002] Quantum dots usually refer to semiconductor materials with a size below 10nm, which have obvious quantum size effects, and the fluorescence of quantum dots can be controlled by changing the size of quantum dots. Therefore, quantum dots have broad application prospects in the fields of solar cells, light-emitting devices, and optical biomarkers. Silicon quantum dots are a typical semiconductor nanomaterial. Compared with other quantum dots, silicon quantum dots have unique surface modification properties, non-toxicity and biocompatibility. They have potential applications in the fields of biology and medicine, attracting many scholars. s concern. [0003] Zhenhui Kang et al. reported that graphite was used as the anode, the si...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/59C01B33/021G01N33/52B82Y20/00B82Y40/00
Inventor 刘祥程鹤鸣赵田田
Owner ANHUI UNIVERSITY OF TECHNOLOGY
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