Zinc-oxide-doped transparent film and preparation method thereof
A transparent conductive thin film, zinc oxide-based technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems affecting the performance of solar cells, complicated processing technology, poor uniformity and repeatability, etc., to achieve The effect of improving photoelectric conversion efficiency, simple preparation process and low cost
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Embodiment 1
[0018] (1) ZnO with a purity of 99.99% and elemental Al were mixed and dried at an Al doping ratio of 2.0 mol%, and then ground in a ball mill for 2 hours, and the obtained precursor powder was pre-calcined at 800°C for 6 hours. The sintered doped powder was pressed into shape, and then sintered at 1250° C. for 4 hours to obtain a ZnO:Al target.
[0019] (2) Use ordinary glass as the substrate, and the substrate is cleaned with ultrasonic waves, and then cleaned with alcohol; the target material in step (1) and the cleaned substrate are sent to a direct-flow magnetron sputtering apparatus, and the background of the sputtering apparatus is The base vacuum is 3×10 -4 Pa. The sputtering gas is argon with a purity of 99.99%, the working pressure is 0.5Pa, the sputtering power is 16w, and the sputtering time is 100 minutes to obtain a doped zinc oxide transparent conductive film.
[0020] The transparent conductive film prepared in this embodiment has good crystallization, the fi...
Embodiment 2
[0022] (1) ZnO and MoO with a purity of 99.99% 3 Powder, by MoO 3 The doping ratio is 3% (mol) and mixed with a ball mill for 3 hours to obtain a precursor powder that is pre-sintered at 1000°C for 4 hours. target.
[0023] (2) Use glass as the substrate, and the substrate is cleaned with ultrasonic waves and alcohol; the target material of step (1) and the cleaned glass substrate are sent to a radio frequency magnetron sputtering apparatus, and the sputtering vacuum is 2.0×10 -4 Pa, the sputtering gas is argon and oxygen (O 2 Gas accounted for 5% of the total gas flow); the distance between the target and the substrate was set to 7cm, the sputtering pressure was 0.6Pa, the sputtering power was 10W, and the sputtering time was 60 minutes.
[0024] The transparent conductive film prepared in this embodiment has good crystallization, maintains good resistance energy, and has a resistivity of 1.00×10 -4 Ω.cm.
Embodiment 3
[0026] (1) A ZnO-based doping compound (ZnO:Sc) was used as a target, and the doping ratio of Sc was 2.0 mol%, and the target was prepared according to the method in Example 1.
[0027] (2) With ordinary glass as the substrate, the background is vacuumed to 2.0×10 -4 Pa, with 99.99% argon as the working gas, the working pressure is maintained at 1.0Pa, the distance between the target and the substrate is 5cm, DC magnetron sputtering is used, the sputtering power is 100w, and the deposition time is 60min.
[0028] The transparent conductive film prepared in this embodiment has the same film properties as in Example 1, and has excellent electrical properties.
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Abstract
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