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Method for preparing P-type Bi2Te3-based thermoelectric material by employing refrigeration crystal bar processed wastes

A technology of thermoelectric materials and ingots, which is applied in the field of P-type Bi2Te3-based thermoelectric materials prepared from refrigerated ingot processing waste, can solve the problems of poor mechanical processing performance of base refrigerated ingots, material utilization rate less than 50%, and serious environmental pollution. Achieve the effects of low cost, low production cost and simple recycling process

Inactive Publication Date: 2015-03-04
WUHAN UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The Bi obtained by the above production method 2 Te 3 The mechanical processing performance of the base cryogenic ingot is poor, and it is easy to break and break in the subsequent processing process, the scrap rate is high, and the material utilization rate is less than 50%.
The theoretical basis of using the above method to extract Te and Bi is to oxidize the Te or Bi element, and then separate and purify it separately, and the recovery scheme is to separate and purify the valuable elements in the refrigeration ingot processing waste, which is divided into multiple steps and multiple steps. The process gradually separates and purifies individual elemental elements. The process is complicated, the cycle is long, the environment is polluted seriously, and the production cost is high.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A method of preparing P-type Bi from refrigerated ingot processing waste 2 Te 3 approach to thermoelectric materials. The steps of this method are:

[0023] The first step, the removal of impurities from the refrigeration ingot processing waste

[0024] First grind the processing waste of the refrigeration ingot into a fine powder with a particle size of less than 200 mesh, wash it with deionized water and absolute ethanol in turn, put it in a vacuum drying oven for drying treatment; then put the dried powder into In the gas reduction furnace, pass the mixed gas of reducing gas and inert gas, then raise the temperature of the gas reduction furnace to 200-280°C, keep it warm for 1.0-2.0h, and finally cool down to room temperature, take out the powder, and then get the refrigerant for removing impurities. Ingot processing waste, vacuum preservation.

[0025] The second step, P-type Bi 2 Te 3 Preparation of base thermoelectric materials

[0026] Firstly put the refr...

Embodiment 2

[0030] A method of preparing P-type Bi from refrigerated ingot processing waste 2 Te 3 approach to thermoelectric materials. The steps of this method are:

[0031] The first step, the removal of impurities from the refrigeration ingot processing waste

[0032] First grind the processing waste of the refrigeration ingot into a fine powder with a particle size of less than 200 mesh, wash it with deionized water and absolute ethanol in turn, put it in a vacuum drying oven for drying treatment; then put the dried powder into In the gas reduction furnace, pass the mixed gas of reducing gas and inert gas, then raise the temperature of the gas reduction furnace to 280-350°C, keep it warm for 2.0-3.0h, and finally cool down to room temperature, take out the powder, and then get the refrigerant for removing impurities. Ingot processing waste, vacuum preservation.

[0033] The second step, P-type Bi 2 Te 3 Preparation of base thermoelectric materials

[0034] Firstly put the refr...

Embodiment 3

[0038] A method of preparing P-type Bi from refrigerated ingot processing waste 2 Te 3 approach to thermoelectric materials. The steps of this method are:

[0039] The first step, the removal of impurities from the refrigeration ingot processing waste

[0040] First grind the processing waste of the refrigeration ingot into a fine powder with a particle size of less than 200 mesh, wash it with deionized water and absolute ethanol in turn, put it in a vacuum drying oven for drying treatment; then put the dried powder into In the gas reduction furnace, pass the mixed gas of reducing gas and inert gas, then raise the temperature of the gas reduction furnace to 350-420°C, keep it warm for 3.0-4.0h, and finally cool down to room temperature, take out the powder, and then get the refrigerant for removing impurities. Ingot processing waste, vacuum preservation.

[0041] The second step, P-type Bi 2 Te 3 Preparation of base thermoelectric materials

[0042] Firstly put the refr...

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Abstract

The invention relates to a method for preparing a P-type Bi2Te3-based thermoelectric material by employing refrigeration crystal bar processed wastes. According to the technical scheme, the method comprises the following steps: grinding the refrigeration crystal bar processed wastes, washing and drying; putting the dried powder into a gas reduction furnace, introducing mixed gas of reducing gas and inert gas, raising the temperature of the gas reduction furnace to be 200-550 DEG C, keeping the temperature of 1.0-5.0 hours, cooling to room temperature, thus obtaining the refrigeration crystal bar processed wastes of which the impurities are removed; putting the refrigeration crystal bar processed wastes into a quartz tube, and adding Bi, Te, Sb and Se raw materials of which the purity is more than 99.9 weight percent according to the chemical formula BixSb(2-x)Te(3-y)Sey of the P-type Bi2Te3-based thermoelectric material, wherein x is more than or equal to 0.3 and less than or equal to 0.6, and y is less than or equal to 0.7; and finally, performing vacuum packaging on the quartz tube, smelting the materials in a heating furnace at the smelting temperature of 580-850 DEG C, keeping the temperature of 0.5-5.0 hours, furnace cooling, taking out alloy ingots in the quartz tube, thus obtaining the P-type Bi2Te3-based thermoelectric material. The method has the characteristics of simple process, short recovery cycle, slight environmental pollution and low cost.

Description

technical field [0001] The present invention belongs to P-type Bi 2 Te 3 Based thermoelectric materials technology field. In particular, it relates to a method of preparing P-type Bi from processing waste materials of refrigerated ingots. 2 Te 3 approach to thermoelectric materials. Background technique [0002] Thermoelectric material is a functional material that can directly convert heat energy and electric energy, and it has attracted more and more attention in today's society. Bi 2 Te 3 As the thermoelectric material with the best thermoelectric performance near room temperature, the base compound has an irreplaceable position in the process of commercial application and is widely used in the semiconductor refrigeration industry. Bi is currently commercially produced on a large scale 2 Te 3 Based thermoelectric materials are usually uniaxially grown, such as Bridgman method and zone melting method, in order to obtain Bi with excellent thermoelectric properties....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/00
Inventor 樊希安蔡新志荣振洲杨帆吴朝阳陆磊李光强
Owner WUHAN UNIV OF SCI & TECH