Solvothermal method for preparing SmS nanoarray

A technology of nano-array and solvothermal method, which is applied in the direction of nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problems of high cost, difficult process control, expensive equipment, etc., to avoid curling, low reaction temperature, crystal grain Growth Controlled Effects

Active Publication Date: 2013-10-16
盐城市枯枝牡丹旅游开发投资有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The equipment required for these methods to prepare SmS thin films is relatively expensive, the cost is high, and the process is difficult to control

Method used

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  • Solvothermal method for preparing SmS nanoarray

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Step 1: Add analytically pure SmCl 3 ·6H 2 O was dissolved in a certain amount of absolute ethanol to prepare Sm 3+ A transparent solution with a concentration of 0.05 mol / L is marked as A. will analyze pure CS 2 Dissolved in a certain amount of absolute ethanol to prepare S 2- A transparent solution with a concentration of 0.1mol / L is marked as B;

[0024] Step 2: Mix solutions A and B according to a volume ratio of 2:1, and after stirring evenly, adjust the pH of the system to 4.5 with a 5% ammonia solution by mass percentage to obtain a precursor solution C;

[0025] Step 3: Place the cleaned Si(100) substrate in an ultraviolet irradiation instrument, irradiate it at a wavelength of 185nm for 10 minutes, and then soak it in octadecyltrichlorosilane-toluene solution (volume ratio 1:100) After 20 minutes, take out the substrate and wash it with acetone and absolute ethanol for 3 times, place it in an electric vacuum oven and dry it at 100°C for 10 minutes, then pu...

Embodiment 2

[0030] Step 1: Add analytically pure SmCl 3 ·6H 2 O was dissolved in a certain amount of absolute ethanol to prepare Sm 3+ A transparent solution with a concentration of 0.10 mol / L is marked as A. will analyze pure CS 2 Dissolved in a certain amount of absolute ethanol, prepared as S 2- A transparent solution with a concentration of 0.05mol / L is marked as B;

[0031] Step 2: Mix solutions A and B according to the volume ratio of 1:3, and after stirring evenly, adjust the pH of the system to 6.0 with 5% ammonia solution by mass percentage to prepare precursor solution C;

[0032] Step 3: Place the cleaned Si(100) substrate in a UV irradiation instrument, irradiate it at a wavelength of 185nm for 15 minutes, and then soak it in an octadecyltrichlorosilane-toluene solution (volume ratio 1:100) After 30 minutes, take out the substrate and wash it with acetone and absolute ethanol for 4 times, place it in an electric vacuum oven and dry it at 120°C for 8 minutes, and then put ...

Embodiment 3

[0037] Step 1: Add analytically pure SmCl 3 ·6H 2 O was dissolved in a certain amount of absolute ethanol to prepare Sm 3+ A transparent solution with a concentration of 0.15 mol / L is marked as A. will analyze pure CS 2 Dissolved in a certain amount of absolute ethanol, prepared as S 2- A transparent solution with a concentration of 0.15mol / L is marked as B;

[0038] Step 2: Mix solutions A and B according to a volume ratio of 1:1, and after stirring evenly, adjust the pH of the system to 5.5 with 5% ammonia solution by mass percentage to prepare precursor solution C;

[0039] Step 3: Place the cleaned Si(100) substrate in a UV irradiation instrument, irradiate it with light at a wavelength of 185nm for 20 minutes, and then soak it in octadecyltrichlorosilane-toluene solution (volume ratio 1:100) After 25 minutes, take out the substrate and wash it with acetone and absolute ethanol for 5 times, place it in an electric vacuum oven and dry it at 140°C for 6 minutes, then pu...

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Abstract

A solvothermal method for preparing an SmS nanoarray comprises the following steps: preparing an Sm solution A and an S solution B respectively; uniformly mixing the solution A and the solution B to obtain precursor liquid C; putting a Si substrate into an ultraviolet radiation instrument, after radiation of light at 185 nM wavelength, putting the Si substrate into an octadecyl trichlorosilane-toluene solution, soaking, cleaning and drying, and putting the substrate into the ultraviolet radiation instrument for light radiation to obtain an OTS-SAM functionalized silicon substrate; putting the precursor liquid C into a conical flask, putting the OTS-SAM functionalized silicon substrate into the conical flask, sealing, depositing in an electric vacuum drying oven, putting the substrate into a hydrothermal reactor with the precursor liquid C, taking out the substrate after reaction in the electric vacuum drying oven, cleaning, and drying to obtain the SmS nanoarray on the surface of the substrate. The reaction for preparing the SmS nanoarray is carried out in a liquid phase and crystallization heat posttreatment is not required, thus defects of the SmS nanoarray such as curling, cracking, reaction between a film and the substrate or an atmosphere, and the like are avoided, which may be caused during the heat treatment.

Description

technical field [0001] The invention relates to a method for preparing SmS nano arrays, in particular to a method for preparing SmS nano arrays by a solvothermal method. Background technique [0002] The SmS crystal has a cubic structure and is a black semiconductor (S-SmS) at room temperature and pressure, and its lattice parameter is 0.597nm. at 6.5 x 10 8 Under the stress of Pa, SmS will transform from semiconductor phase (S-SmS) to metal phase (M-SmS), and this phase transition is reversible. When the phase transition occurs, the lattice parameter of the SmS crystal changes from 0.597nm to 0.570nm, the volume shrinks, and the color changes from blue-black to golden yellow, but the cubic structure is still maintained. The transmission of S-SmS is green and the reflection is blue-black, while the transmission of M-SmS is blue and the reflection is golden yellow. These special structural features have aroused people's strong interest in the study of its magnetism, pressu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01F17/00C04B41/50B82Y30/00B82Y40/00
Inventor 殷立雄王丹黄剑锋郝巍李嘉胤曹丽云吴建鹏
Owner 盐城市枯枝牡丹旅游开发投资有限公司
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