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CIGS (Copper Indium Gallium Selenium) solar cell back-electrode Mo film and preparation technology thereof

A technology of solar cells and copper indium gallium selenide, applied in the field of solar cells, can solve problems such as lattice mismatch, and achieve the effect of good adhesion

Inactive Publication Date: 2013-10-16
ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In order to solve the problem of lattice mismatch between the Mo layer and the glass substrate in the existing Mo thin film, the present invention proposes a Mo thin film for the back electrode of a copper indium gallium selenide solar cell and its preparation process. Mo oxide layer is added between the layers, which has good adhesion to the glass substrate and facilitates the growth of the CIGS absorber layer

Method used

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  • CIGS (Copper Indium Gallium Selenium) solar cell back-electrode Mo film and preparation technology thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Such as figure 1 As shown, a Mo film on the back electrode of a copper indium gallium selenide solar cell includes a glass substrate 1, a Mo oxide layer 2, an inner Mo film 3 and an outer Mo film 4, and the Mo oxide layer 2 is attached to the glass substrate 1 Above, the inner Mo film 3 is attached to the Mo oxide layer 2, and the outer Mo film 4 is attached to the inner Mo film 3, wherein the composition of the Mo oxide layer 1 is MoO 2 .

[0026] The preparation process of the Mo thin film of the back electrode of the copper indium gallium selenide solar cell is as follows:

[0027] Soak the sliced ​​glass in alkaline solution for one night, after deionized washing, then ultrasonically clean it in acidic solution for 30 minutes, then after deionized washing, pass through acetone, absolute ethanol and deionized water successively, each Ultrasonic cleaning for 10 minutes, and finally dried with nitrogen gas for later use. Put the clean glass substrate into the ma...

Embodiment 2

[0032] A copper indium gallium selenide solar cell back electrode Mo thin film, comprising a glass substrate 1, a Mo oxide layer 2, an inner Mo thin film 3 and an outer Mo thin film 4, the Mo oxide layer 2 is bonded on the glass substrate 1, and the inner Layer Mo film 3 is pasted on the Mo oxide layer 2, and the outer Mo film 4 is pasted on the inner Mo film 3, wherein the composition of Mo oxide layer 1 is MoO 3 .

[0033] The preparation process of the Mo thin film of the back electrode of the copper indium gallium selenide solar cell is as follows:

[0034] Soak the sliced ​​glass in alkaline solution for one night, after deionized washing, then ultrasonically clean it in acidic solution for 30 minutes, then after deionized washing, pass through acetone, absolute ethanol and deionized water successively, each Ultrasonic cleaning for 10 minutes, and finally dried with nitrogen gas for later use. Put the clean glass substrate into the magnetron sputtering chamber, and the ...

Embodiment 3

[0039] A copper indium gallium selenide solar cell back electrode Mo thin film, comprising a glass substrate 1, a Mo oxide layer 2, an inner Mo thin film 3 and an outer Mo thin film 4, the Mo oxide layer 2 is bonded on the glass substrate 1, and the inner Layer Mo thin film 3 is pasted on the Mo oxide layer 2, and the outer Mo thin film 4 is pasted on the inner Mo thin film 3, wherein the composition of the Mo oxide layer 1 is Mo 4 o 11 .

[0040] The preparation process of the Mo thin film of the back electrode of the copper indium gallium selenide solar cell is as follows:

[0041] Soak the sliced ​​glass in alkaline solution for one night, after deionized washing, then ultrasonically clean it in acidic solution for 30 minutes, then after deionized washing, pass through acetone, absolute ethanol and deionized water successively, each Ultrasonic cleaning for 10 minutes, and finally dried with nitrogen gas for later use. Put the clean glass substrate into the magnetron sput...

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Abstract

The invention discloses a CIGS solar cell back-electrode Mo film and a preparation technology thereof. The Mo film comprises a glass substrate, a Mo oxide layer, an inner Mo film and an outer Mo film, wherein the Mo oxide layer is applied to the glass substrate, the inner Mo film is applied to the Mo oxide layer, and the outer Mo film is applied to the inner Mo film. The Mo film is prepared by the steps of washing, preparing the Mo oxide layer, preparing the inner Mo film and preparing the outer Mo film. The CIGS solar cell back-electrode Mo film includes a fish scale structure, which is very suitable for growth of a CIGS absorbed layer; adhesion force of the Mo film to glass is excellent; pinhole phenomena do not occur; the Mo film does not fall off in a cross cut test; and minimal square resistance of the Mo film can reach 0.16 ohm, which completely satisfies resistance requirements for back electrodes.

Description

technical field [0001] The invention relates to the field of solar cells, in particular to a back electrode film of a copper indium gallium selenium solar cell and a preparation process thereof. Background technique [0002] Copper indium gallium selenium CIGS thin-film solar cells have become the current industry and research institutions' contention due to their advantages such as high absorption rate, adjustable band gap, low cost, high conversion rate, good low light performance, stable performance and strong radiation resistance. The focus of phase development. In recent years, under the background of its excellent performance and huge demand, many companies and institutions around the world, including the US renewable energy laboratory NREL, Solar Frontier, Miasole, Global solar, Wurth Solar, etc., have invested huge financial resources and manpower in research and development and production. The production capacity in 2011 It has reached the GW level, showing a good ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18C23C14/35C23C14/08C23C14/18
CPCY02P70/50
Inventor 任宇航孟振华罗派峰郭勤勤邹以慧
Owner ZHEJIANG SHANGYUE OPTOELECTRONICS TECH
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