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Preparation method of ecr-pemocvd deposited inn thin film at low temperature on gan buffer layer/diamond thin film/si multilayer film structure substrate

A diamond thin film and buffer layer technology, applied in coating, metal material coating process, gaseous chemical plating and other directions, can solve the problems such as hindering the development of InN material devices, high price of sapphire substrates, and difficulty in reducing device costs, and achieves The effect of solving lattice mismatch, low cost, good electrical performance and thermal performance

Active Publication Date: 2016-06-01
辽宁众城新能源开发有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As we all know, the price of sapphire substrate is relatively high. Using it as the substrate of InN material makes it difficult to reduce the cost of InN material-based devices, which seriously hinders the development of InN material devices.

Method used

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  • Preparation method of ecr-pemocvd deposited inn thin film at low temperature on gan buffer layer/diamond thin film/si multilayer film structure substrate
  • Preparation method of ecr-pemocvd deposited inn thin film at low temperature on gan buffer layer/diamond thin film/si multilayer film structure substrate
  • Preparation method of ecr-pemocvd deposited inn thin film at low temperature on gan buffer layer/diamond thin film/si multilayer film structure substrate

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Experimental program
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Effect test

Embodiment 1

[0041] After the Si substrate was ultrasonically cleaned with acetone, ethanol and deionized water for 5 minutes, it was blown dry with nitrogen and sent to the reaction chamber; the reaction chamber was evacuated to 1.0×10 with a hot wire CVD system. -2 Pa, the substrate is heated to 800°C, and hydrogen and methane gas are introduced into the reaction chamber. The flow rate of the two is 200 sccm for hydrogen and 4 sccm for methane, controlled by a mass flow meter; the voltage of the hot wire is 10V, and the current of the filament is 50A. After reacting for 30min, a diamond film was obtained on the Si substrate. ECR-PEMOCVD system was used to evacuate the reaction chamber to 8.0×10 -4 Pa, the substrate is heated to 400°C, trimethylgallium and nitrogen carried by hydrogen gas are introduced into the reaction chamber, and the flow rates of the two are 0.5 sccm and 100 sccm respectively, controlled by a mass flow meter; the total pressure of the control gas is 1.2Pa; ...

Embodiment 2

[0044] After the Si substrate was ultrasonically cleaned with acetone, ethanol and deionized water for 5 minutes, it was blown dry with nitrogen and sent to the reaction chamber; the reaction chamber was evacuated to 1.0×10 with a hot wire CVD system. -2 Pa, the substrate is heated to 800°C, and hydrogen and methane gas are introduced into the reaction chamber. The flow rate of the two is 200 sccm for hydrogen and 4 sccm for methane, controlled by a mass flow meter; the voltage of the hot wire is 10V, and the current of the filament is 50A. After reacting for 30min, a diamond film was obtained on the Si substrate. ECR-PEMOCVD system was used to evacuate the reaction chamber to 8.0×10 -4 Pa, the substrate is heated to 200°C, trimethylgallium and nitrogen carried by hydrogen gas are introduced into the reaction chamber, and the flow rates of the two are 0.5 sccm and 100 sccm respectively, controlled by a mass flow meter; the total pressure of the control gas is 1.2Pa; ...

Embodiment 3

[0046] After the Si substrate was ultrasonically cleaned with acetone, ethanol and deionized water for 5 minutes, it was blown dry with nitrogen and sent to the reaction chamber; the reaction chamber was evacuated to 1.0×10 with a hot wire CVD system. -2 Pa, the substrate is heated to 800°C, and hydrogen and methane gas are introduced into the reaction chamber. The flow rate of the two is 200 sccm for hydrogen and 4 sccm for methane, controlled by a mass flow meter; the voltage of the hot wire is 10V, and the current of the filament is 50A. After reacting for 30min, a diamond film was obtained on the Si substrate. ECR-PEMOCVD system was used to evacuate the reaction chamber to 8.0×10 -4 Pa, the substrate is heated to 300°C, trimethylgallium and nitrogen carried by hydrogen gas are introduced into the reaction chamber, and the flow rates of the two are 0.5 sccm and 100 sccm respectively, controlled by a mass flow meter; the total pressure of the control gas is 1.2Pa; ...

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Abstract

The invention belongs to the technical field of deposition and preparation of new photoelectric materials, and provides a method capable of preparing photoelectric materials with good electrical properties. InN Photoelectric thin film and low cost ECR-PEMOCVD exist GaN The buffer layer / Diamond film / Si Low temperature deposition on multilayer film structure substrate InN The method of film preparation. The present invention comprises the following steps: 1 )Will Si After the substrate is ultrasonically cleaned with acetone, ethanol and deionized water in sequence, it is blown dry with nitrogen and sent to the reaction chamber; 2 ) with hot wire CVD system, the reaction chamber is evacuated, and the Si The substrate is heated, and hydrogen and methane gas are introduced into the reaction chamber. Si The diamond film is obtained on the substrate substrate. 3 )use ECR-PEMOCVD (electron cyclotron resonance - Plasma-enhanced metal-organic chemical vapor deposition) system, the reaction chamber is evacuated, and the substrate is heated to 200 ～ 600 °C, trimethylgallium and nitrogen carried by hydrogen are introduced into the reaction chamber.

Description

Technical field [0001] The present invention is a new type of photoelectric material deposition preparation technology, especially involving an ECR-PEMOCVD in the GAN buffer layer / diamond film / SI multi-layer membrane structure substrate preparation method. Background technique [0002] Nitride (INN) is an important member of the III nitride. Compared with GAN and Aln, the migration rate and peak rate of INN are the highest.; Its room temperature is located in near -infrared areas, and it is also suitable for preparing high -efficiency solar cells, semiconductor emitting diode and optical communication devices.However, due to the low decomposition temperature of the INN and the low growth temperature of the nitrogen source, the nitrogen source decomposition temperature is high, so the general Inn thin film grows on some substrates such as sapphire.As we all know, the price of sapphire substrates is high. It is used as a substrate of the INN material to make it difficult for the co...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/34C23C16/511C23C16/27
Inventor 张东王存旭宋世巍王健王刚李昱材
Owner 辽宁众城新能源开发有限公司
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