Secondarily grown one-dimensional electron gas gan-based hemt device and preparation method

Abstract

The invention discloses a secondary-growth one-dimensional electron gas GaN-based HEMT (High Electron Mobility Transistor) device and a preparation method, which mainly solve the problems that the high temperature and high pressure characteristic, the frequency characteristic and the power characteristic of an existing one-dimensional electron gas device are poorer. The secondary-growth one-dimensional electron gas GaN-based HEMT device comprises a substrate, a buffer layer, a barrier layer, a passivation layer and a protection layer from bottom to top, wherein two ends of the barrier layer are respectively provided with a source electrode and a drain electrode, the passivation layer is positioned on the barrier layer between the source electrode and the drain electrode, the passivation layer is provided with a grid groove, the grid groove is internally provided with a grid electrode, the buffer layer adopts GaN, the barrier layer adopts AlGaN, the buffer layer is etched with a plurality of quantum wire grooves and quantum wire convex plates, the quantum wire grooves and the quantum wire convex plates are in periodical arrangement, the width of the quantum wire grooves and the quantum wire convex plates is in a nanometer level, and one-dimensional electron gas is formed in a heterogenous junction which is right under the quantum wire grooves and the quantum wire convex plates. Compared with a Si-based and GaAs-based one-dimensional electron gas device, the secondary-growth one-dimensional electron gas GaN-based HEMT device has the advantages of good high temperature and high pressure characteristic, good frequency characteristic and good power characteristic, and the one-dimensional electron gas device in super high speed and low power consumption can be manufactured.

Description

technical field [0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular a one-dimensional electron gas HEMT device based on a GaN semiconductor material heterojunction structure, which can be used as a basic device of a microwave, millimeter wave communication system and a radar system. Background technique [0002] III-V compound semiconductor materials are the third-generation semiconductor materials that have been developed rapidly for more than ten years, such as GaN-based, GaAs-based, InP-based and other semiconductor materials, which have a large band gap and can be combined with InN, AlN, etc. Alloy semiconductors are formed to make their forbidden band width adjustable. People usually use these III-V compound semiconductor materials to form various heterojunction structures. Due to the large difference in the forbidden band width of the III-V compound semiconductor materials on both sides of the het...

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Problems solved by technology

[0017] 1. Due to the small bandgap width of Si and GaAs semiconductor materials, the intrinsic carrier concentration is high and the breakdown electric field is small, which makes the prepared Si-based and GaAs-based devices have poor high temperature and high pressure characteristics and are resistant to radiation. very weak

[0018] 2. Due to the poor electron transport characteristics of Si and GaAs semiconductor materials, the prepared Si-based and GaAs-based devices have poor frequency characteristics;

[0019] 3. Due to the poor polarization characteristics of Si and GaAs semiconductor materials when forming heterojunctions, the electron concentration is greatly limited, making the power characteristics of Si-based and GaAs-based devices prepared are also poor

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