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A digital spin valve magnetic field sensor and its preparation technology

A magnetic field sensor and spin valve technology, applied in the field of sensor devices, can solve insurmountable problems and achieve the effects of avoiding circuit complexity, signal-to-noise ratio, resolution improvement, and high anti-interference

Inactive Publication Date: 2016-05-11
ANHUI UNIVERSITY
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Problems solved by technology

This defect is determined by the properties of the material itself, so this technical defect is insurmountable

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  • A digital spin valve magnetic field sensor and its preparation technology
  • A digital spin valve magnetic field sensor and its preparation technology
  • A digital spin valve magnetic field sensor and its preparation technology

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Embodiment Construction

[0026] In order to facilitate the understanding of those skilled in the art, the present invention will be further described below in conjunction with the accompanying drawings.

[0027] see Figure 7 , a digital spin valve magnetic field sensor. The giant magnetoresistance spin valve film material structure used on the substrate is composed of multi-layer nanometer-scale thickness giant magnetoresistance and tunnel junction spin valve materials. The core structure is sequentially A buffer layer, an antiferromagnetic layer 4, a first ferromagnetic layer 3, a nonmagnetic layer 2, a second ferromagnetic layer 1 and a protective layer, the first ferromagnetic layer 3 (pinning layer) is continuously variable in thickness wedge.

[0028] The substrate is any substrate material with good flatness such as silicon wafer or glass, and the giant magnetoresistance and tunnel junction spin valve materials are arranged on the substrate by thin film preparation techniques such as magnetron...

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Abstract

The invention relates to a low-cost, high-precision sensor device for measuring magnetic fields, and specifically to a digital spin valve magnetic field sensor and its preparation technology. The giant magnetoresistance spin valve film material structure used on the substrate is composed of multiple layers of nanometer-thickness giant magnetoresistance and tunnel junction spin valve materials. Its core structure is a buffer layer, an antiferromagnetic layer, and a first layer. A ferromagnetic layer, a non-magnetic layer, a second ferromagnetic layer and a protective layer. The first ferromagnetic layer is in a wedge shape with a continuously changing thickness. The invention can achieve extremely high-precision and stable magnetic field size detection at a low cost and has extremely high anti-interference properties. And photolithography technology can produce extremely small spin valve magnetic field sensor units. Therefore, this technical method can achieve extremely high resolution of magnetic field measurement by controlling the size and number of the units, and will not be damaged even under strong magnetic fields. , and the peripheral circuit is simple, avoiding measurement errors caused by factors such as circuit complexity and signal-to-noise ratio.

Description

technical field [0001] The invention relates to a low-cost, high-precision sensor device for measuring magnetic fields, in particular to a digital spin valve magnetic field sensor and its preparation technology. Background technique [0002] At present, the devices used for magnetic field measurement on the market mainly include fluxgates, superconducting quantum interferometers based on superconducting materials, Gauss meters based on the Hall effect, and magnetoresistive sensors based on magnetoresistors. And magnetoresistive sensors are used the most. Generally, Hall effect sensors are mainly used for the measurement of large magnetic fields, while magnetoresistive sensors are mainly used for the detection of weak magnetic fields. [0003] Since the emergence of magnetoresistive resistance sensors, as one of the most cutting-edge nanotechnology, with its high sensitivity, small size and low cost advantages, it has been widely used in information technology fields such as...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R33/09H01L43/12H01L43/08H10N50/01H10N50/10
Inventor 王磊张荣跃汪雪洁段懿炜吴鹏张长江梁潇涵谢锦涛高佳星曹德薇宋航李广
Owner ANHUI UNIVERSITY
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