Preparation method for epitaxial germanium film through polymer auxiliary deposition

An assisted deposition and germanium thin film technology, which is applied in chemical instruments and methods, single crystal growth, polycrystalline material growth, etc., can solve problems such as complex and expensive methods, and achieve highly ordered lattice mismatch and good epitaxial film quality , the effect of good crystallinity

Inactive Publication Date: 2013-11-20
常熟苏大低碳应用技术研究院有限公司
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  • Preparation method for epitaxial germanium film through polymer auxiliary deposition
  • Preparation method for epitaxial germanium film through polymer auxiliary deposition
  • Preparation method for epitaxial germanium film through polymer auxiliary deposition

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Embodiment

[0032] The invention directly prepares a highly ordered germanium thin film on a single crystal silicon substrate without a buffer layer. The preparation method applies a germanium-containing coating solution to a silicon substrate. Then place the coated substrate in a hydrogen atmosphere for heat treatment, and directly transform it into a high-quality lattice-mismatched highly ordered germanium film on the silicon substrate.

[0033] The specific coating solution is obtained by mixing water, germanium compound, polyethylenediamine (PEI) and ethylenediaminetetraacetic acid (EDTA) to prepare a precursor solution, and then ultrafiltering it. For example: Add 2.5 g EDTA (ALDRICH, 99.995%) to 25 ml pure water (resistance value 18 MΩ, prepared by MILLI-Q system). Add 1.26 g of high-purity germanium oxide (ALDRICH, 99.99%), and then add 4 g of polyethylenediamine (PEI) (BASF, Germany). The final solution was subjected to ultrafiltration using an ultrafiltration cup (AMICON) sti...

Embodiment A

[0047] Prepare coating solution using germanium oxide: 2.56 g H 2 EDTA (Aldrich, 99.995%) was dissolved in 25 mL of water, and 3.25 g of polyethylenediamine (PEI,) (BASF, Germany) was added and mixed until a clear liquid was formed. Then add 1.20 g GeO 2 (ACROS, 99.999%). After stirring overnight, a clear solution with some precipitate was obtained. The precipitate was removed by filtration (0.45 μm filter). The obtained clear filtrate was diluted to 200 mL, and placed in an ultrafiltration cup for ultrafiltration to remove impurities with a molecular weight below 10,000 g / mol. It was then concentrated to 20 mL. The concentration of germanium contained in the coating solution obtained by inductively coupled plasma atomic emission (ICP-AES) spectrometer test is 404 mM, and the pH value is 8.44.

Embodiment B

[0049] Prepare coating solution using germanium tetrachloride: 1.3 g H 2 EDTA (Aldrich, 99.995%) was dissolved in 25 mL of water, and 1.6 g of polyethylenediamine (PEI,) (BASF, Germany) was added and mixed until a clear liquid was formed. Then slowly add 1.20 g GeCl 4 (ACROS, 99.999%). A small amount of precipitation will occur. The pH was adjusted to 4.9 by dropwise addition of aqueous ammonia, and the solution was left overnight. A solution with a little precipitate was obtained. The precipitate was removed by filtration (0.45 μm filter). The germanium concentration in the obtained clarified solution is 200 mM, and it can also be directly used as a coating solution, because the residual ammonium and chlorine will be removed during the membrane annealing process. Further purification to remove ammonium chloride is to remove impurities with a molecular weight lower than 10000 g / mol by placing the clarified liquid obtained above in an ultrafiltration cup for ultrafiltr...

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Abstract

The invention discloses a method for preparing a highly-ordered germanium (Ge) film on a monocrystal silicon (Si) substrate without a buffer layer. The method comprises steps: a uniform coating solution containing germanium-polymer complex compounds is applied on a silicon substrate; the coated substrate is placed in hydrogen atmosphere and subjected to heating treatment; the coating is directly converted into a highly-ordered germanium film with high quality and lattice mismatch on the silicon substrate. The beneficial effects are that: a highly-ordered germanium film can be directly prepared on a monocrystal silicon substrate without a buffer layer; the prepared highly-ordered germanium film has advantages of narrow band gap, high mobility, low defect, high crystallization and the like; the method is simple and practicable, and has wide application prospects.

Description

technical field [0001] The invention relates to a method for preparing a highly ordered germanium (Ge) thin film on a single crystal silicon (Si) substrate. Background technique [0002] The space lattice group of germanium and silicon similar to the diamond structure is F d3m ( a Ge = 5.6576 ?; a Si = 5.4309 ?). The relatively small lattice mismatch (4.17%) makes it possible to grow highly ordered germanium films on silicon substrates. Highly ordered germanium thin films are composed of crystal materials that are the most ordered epitaxial films that are regularly arranged. In addition, due to its high carrier mobility and large light absorption coefficient in the near-infrared band, germanium (Ge) has become one of the most concerned semiconductor materials and is widely used in various fields. For example, the small bandgap of germanium makes it a candidate material for photodetectors and modulators in the 1.3 – 1.6 micron wavelength range. And germanium's high ca...

Claims

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Application Information

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IPC IPC(8): C30B29/08
Inventor 邹贵付赵杰孙迎辉娄艳辉戴晓
Owner 常熟苏大低碳应用技术研究院有限公司
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