Polarization doping-based GaN Schottky diode

A Schottky diode, polarization doping technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problem of not carrying out the preparation of polarization doped GaN Schottky diode devices, etc., to improve the Q value, Improve the operating frequency and output power, reduce the effect of series resistance

Active Publication Date: 2013-11-20
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, no polarization-doped GaN Schottky diode device

Method used

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  • Polarization doping-based GaN Schottky diode
  • Polarization doping-based GaN Schottky diode
  • Polarization doping-based GaN Schottky diode

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] Depend on figure 1 As shown, it can be seen that the GaN Schottky diode based on polarization doping includes a semi-insulating substrate layer 101 for supporting the entire GaN Schottky diode, and a highly doped N+ type GaN grown on the substrate layer 101. layer 102 and the N-type Al grown on the N+-type GaN layer 102 using polarization doping x Ga 1-x N (0x Ga 1-x The Al composition of the N (016 cm -3 to 10 19 cm -3 .

[0021] An ohmic contact electrode 104 is grown on the N+ type GaN layer 102, the ohmic contact electrode 104 is divided into two parts, symmetrically arranged at both ends of the N+ type GaN layer 102, between the ohmic contact electrode 104 and the N+ type GaN layer 102 surface contact. In the N-type Al x Ga 1-x A Schottky contact electrode 105 is grown on the N (0x Ga 1-x The N (0

[0022] In this embodiment, the substrate layer 101 is a sapphire substrate; the ohmic contact electrode 104 i...

Embodiment 2

[0031] Depend on figure 2 It can be seen that, unlike Example 1, the N-type Al x Ga 1-x The Al composition of the N (0

[0032] The N+-type GaN layer 102 is divided into two parts and arranged at both ends of the substrate layer 101, on which ohmic contact electrodes 104 are respectively arranged, and one of the N+-type GaN layers 102 is also provided with an N-type Al x Ga 1-x N (0x Ga 1-x A Schottky contact electrode 105 is arranged on the N (0

[0033] Below the air bridge cantilever 106, there is a deep groove isolation region 107, which connects the Schottky contact electrode 105, the ohmic contact electrode 104 connected to the air bridge cantilever 106, and...

Embodiment 3

[0046] Such as image 3 It can be seen that, different from Embodiment 2, the N+ type GaN layer 102 is divided into two parts and arranged at both ends of the substrate layer 101, and the N+ type GaN layer 102 is provided with an N-type Al x Ga 1-x N (0x Ga 1-x The N (0x Ga 1-x There are steps on the N (0

[0047] There are also differences in the manufacturing process. Corresponding to step 4 in embodiment 2, step 4 of this embodiment should be: remove N-type Al by wet etching or dry etching process x Ga 1-x Part of the N (0x Ga 1-x At the bottom of the N (0x Ga 1-x Steps are formed on the N (0x Ga 1-x On the bottom of the N (0

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PUM

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Abstract

The invention discloses a polarization doping-based GaN Schottky diode, and belongs to the field of semiconductor devices. The diode comprises a semi-insulated substrate layer used for supporting the overall GaN Schottky diode, a highly doped N+ type GaN layer grown on the substrate layer, and an N- type AlxGa1-xN (x is greater than 0 and less than or equal to 1) layer which is grown in the N+ type GaN layer by adopting polarization doping; and the component Al of the N- type Al[x]Ga[1-x]N (x is greater than 0 and less than equal to 1) layer is distributed non-uniformly from the interface of the N+ type GaN layer. An ohmic contact electrode and a Schottky contact electrode are also arranged on the diode. According to the polarization doping-based GaN Schottky diode, the N- type AlxGa1-xN (x is greater than 0 and less than or equal to 1) layer is grown on the N+ type GaN layer in a polarization doping mode, so that the mobility of a GaN material is improved, the serial resistance of the Schottky diode is reduced, and the working frequency of the Schottky diode is improved; therefore, the working frequency and the output power of a frequency multiplier circuit in the range of millimeter wave and terahertz are improved. In the polarization doping mode, the capacitance variation ratio of the Schottky diode can be controlled effectively and the Q value of a device can be improved.

Description

technical field [0001] The invention belongs to the field of semiconductor devices. Background technique [0002] Schottky frequency doubler diode devices based on traditional semiconductor materials such as Si and GaAs are limited by the properties of the material itself, so it is difficult to further improve the corresponding indicators such as power and breakdown voltage. In recent years, a new generation of wide-bandgap semiconductor materials represented by group III nitrides has developed rapidly. It has excellent material properties such as wide band gap, high saturated electron drift velocity, high breakdown field strength and high thermal conductivity, and has great development potential in the field of millimeter wave and submillimeter wave high-power electronic devices. Research on GaN-based Schottky diode millimeter-wave and sub-millimeter-wave frequency multipliers is currently a hot spot in the world, and domestic research is still at a very low frequency. ...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/06H01L29/45H01L29/47
Inventor 梁士雄冯志红房玉龙邢东王俊龙张立森杨大宝
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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