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Organic light-emitting device and preparation method thereof

An electroluminescent device and a luminescent technology, applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low recombination probability of holes and electrons, and reduce the luminous efficiency of organic electroluminescent devices. To achieve the effect of improving recombination probability, high luminous efficiency, and inhibiting transmission

Inactive Publication Date: 2013-12-04
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in organic small molecule materials, the hole transport rate is more than two orders of magnitude higher than the electron transport rate. Therefore, the recombination probability of holes and electrons is often low, thereby reducing the luminous efficiency of organic electroluminescent devices.

Method used

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  • Organic light-emitting device and preparation method thereof
  • Organic light-emitting device and preparation method thereof
  • Organic light-emitting device and preparation method thereof

Examples

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preparation example Construction

[0038] See also figure 2 , The method for manufacturing the organic electroluminescent device 100 of an embodiment includes the following steps:

[0039] Step S110, forming an anode 20 on the surface of the substrate 10.

[0040] The substrate 10 is a glass substrate.

[0041] In this embodiment, the substrate 10 is pretreated before the anode 20 is formed on the surface of the substrate 10. The pretreatment of the substrate 10 is to remove organic contaminants on the surface of the substrate 10. The substrate 10 is first subjected to photolithography processing, and after the building materials are of the required size, they are cleaned with detergent, deionized water, acetone, ethanol, and isoacetone each by ultrasonic cleaning for 15 minutes to remove organic contaminants on the surface of the substrate 10.

[0042] The anode 20 is formed by vapor deposition. The material of the anode 20 is silver (Ag), aluminum (Al), platinum (Pt) or gold (Au), preferably Ag. The thickness of ...

Embodiment 1

[0059] The structure prepared in this embodiment is glass / Ag / TiO 2 :(MoO 3 :TiO 2 ) 3 / NPB:Ir(ppy) 3 / TPBi / CsF / Au organic electroluminescent device.

[0060] First cut the glass substrate to the required size, and then use detergent, deionized water, acetone, ethanol, and isopropanol to ultrasonically each for 15 minutes to remove organic contaminants on the glass surface; vapor deposition anode, the selected material is Ag, The thickness is 150nm; the electron beam evaporates inorganic quantum well layer TiO 2 :(MoO 3 :TiO 2 ) 3 , MoO 3 The thickness is 30nm, TiO 2 The thickness is 60nm; the luminescent layer is evaporated, the material is Ir(ppy) 3 : NPB, doping ratio is 10%, thickness is 20nm; vapor deposition electron transport layer, material is TPBi, thickness is 60nm; vapor deposition electron injection layer, material is CsF, thickness is 2nm; vapor deposition cathode, material is Au, The thickness is 20nm, and finally the required inorganic quantum well organic electrolum...

Embodiment 2

[0065] The structure prepared in this embodiment is glass / Au / TiO 2 :(WO 3 :TiO 2 ) 1 / TCTA: Firpic / TAZ / LiF / Al organic electroluminescent device.

[0066] First cut the glass to the required size, and then use detergent, deionized water, acetone, ethanol, and isopropanol to ultrasonicate for 15 minutes each to remove organic contaminants on the glass surface; firstly, the anode is evaporated, and the selected material is Au, The thickness is 250nm, then lithography; then the quantum well is evaporated, the material is TiO 2 :(WO 3 :TiO 2 ) 1 , WO 3 The thickness is 150nm, TiO 2 The thickness is 20nm; the vapor-deposited light-emitting layer, the material is TCTA:Firpic, the doping ratio is 20%, and the thickness is 30nm; the vapor-deposited electron transport layer, the material is TAZ, the thickness is 80nm; the vapor-deposited electron injection layer, the material is LiF, The thickness is 0.5nm; the vapor deposition cathode is made of Al and the thickness is 5nm. Finally, the d...

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Abstract

An organic light-emitting device comprises an anode, a quantum well layer, a light-emitting layer, an electron transport layer, an electron injection layer and a cathode which are all stacked in sequence. The quantum well layer comprises at least two layers of titanium dioxide layers stacked in sequence and a hole injection layer arranged between the two layers of adjacent titanium dioxide layers. The hole injection layer is made of molybdenum sesquioxide, tungsten trioxide or vanadium pentoxide. The organic light-emitting device is high in luminous efficiency. The invention further provides a preparation method of the organic light-emitting device.

Description

Technical field [0001] The invention relates to an organic electroluminescence device and a preparation method thereof. Background technique [0002] The light-emitting principle of organic electroluminescent devices is based on the fact that electrons are injected from the cathode to the lowest unoccupied molecular orbital (LUMO) of organic matter under the action of an external electric field, and holes are injected from the anode to the highest occupied orbital (HOMO) of organic matter. Electrons and holes meet and recombine in the light-emitting layer to form excitons. The excitons migrate under the action of an electric field, transfer energy to the luminescent material, and excite the electrons to transition from the ground state to the excited state. The excited state energy is deactivated by radiation to produce photons , Release light energy. [0003] However, in organic small molecule materials, the hole transport rate is more than two orders of magnitude higher than the...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56H01L51/54
Inventor 周明杰王平黄辉陈吉星
Owner OCEANS KING LIGHTING SCI&TECH CO LTD