Preparation method of cyanate ester resin thin film as well as reaction equipment thereof

A technology of cyanate resin and reaction equipment, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problems of insufficient catalytic selectivity, difficult to stabilize curing process, adverse effect on dielectric properties, etc. , to achieve the effect of no environmental pollution, easy to implement, and solve the difficulty of feeding

Active Publication Date: 2013-12-25
HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, most of the research on cyanate resins focuses on using cyanate resins as resin-based composite materials, but there are few research reports on the preparation of cyanate resin films as low-dielectric materials. The main reasons are: (1) The catalytic selectivity of the existing curing polymerization reaction catalyst is not high enough to effectively convert the cyanate ester monomer into a polymer, and the remaining catalyst will also adversely affect the dielectric properties of the film
(2) The curing polymerization reaction of cyanate ester monomer is sensitive to impurities, and impurities play a strong catalytic role in the curing reaction of cyanate ester resin, which makes the curing process difficult to stabilize, thus affecting the dielectric properties of the film to a certain extent
The existing known plasma polymerization device is a single reaction chamber, and most of the raw material monomers capable of plasma polymerization in this device are organic liquid phase monomers, and the liquid phase monomers are introduced into the reaction chamber through conduits; but when the raw material monomers When it is a solid phase, there is a problem of difficulty in feeding

Method used

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  • Preparation method of cyanate ester resin thin film as well as reaction equipment thereof
  • Preparation method of cyanate ester resin thin film as well as reaction equipment thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0028] A preparation method of cyanate ester resin ultra-thin film, wherein:

[0029] The substrate 14 is a heavily doped p-type silicon wafer;

[0030] The molecular structure of monomer 8 is:

[0031] .

[0032] The preparation process is:

[0033] (1) Substrate pretreatment: Place the substrate 14 on the lower electrode 15 in the pulse plasma main reaction chamber 1, and use the mechanical pump 17 to pump the gas in the main reaction chamber 1 to the main reaction chamber measured by the vacuum gauge 12 The pressure of 1 reaches 2Pa; then high-purity argon is introduced into the main reaction chamber 1 through the argon cylinder 11, until the pressure reaches 80Pa; repeat the above-mentioned gas extraction three times, adjust the pressure of the main reaction chamber 1 to 20Pa, and set the discharge power to 80W. Under the conditions, the substrate was cleaned with argon plasma for 3 minutes.

[0034] (2) Monomer pretreatment and introduction: After the monomer 8 is placed on the m...

Embodiment 1~7

[0038] Table 1 Plasma polymerization conditions of Examples 1-7

[0039]

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PUM

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Abstract

The invention discloses a preparation method of a cyanate ester resin thin film as well as reaction equipment thereof, belonging to the technical field of organic synthesis of cyanate ester resin ultrathin films. The cyanate ester resin ultrathin film is generated by carrying out plasma polymerization on a cyanate ester resin monomer. The preparation method mainly comprises the following steps of substrate pre-treatment, monomer pre-treatment and plasma polymerization. The plasma polymerization condition is as follows: the pressure is 5-20Pa, the pulse width of plasmas is 20-100 seconds, the plasma polymerization power is 15-85W, and the plasma polymerization time is 20-100 minutes. The reaction equipment comprises a main reaction chamber and an assistant reaction chamber. A solid phase monomer is led into the main reaction chamber through on-off conversion of the two chambers and movement on the left and right sides of a push rod, so that the problem that the solid phase monomer is hard to feed is solved. The thin film prepared by the preparation method is low in dielectric constant, free from defect and high in quality. The preparation method is simple in preparation process, easy to implement, free from environmental pollution and low in cost.

Description

Technical field [0001] The invention relates to the technical field of organic synthesis of cyanate ester resin ultra-thin films. Background technique [0002] Cyanate resin is a low-dielectric constant material with the most application potential. Because the triazine ring structure in the molecular structure of the cyanate ester resin is highly symmetrical and extremely low in polarity, it can maintain a low and stable dielectric constant and dielectric loss tangent in a wide temperature range and frequency range. Due to the presence of a large number of benzene rings, aromatic heterocycles and high crosslinking density in the molecular structure, the high temperature resistance of the cyanate ester resin is very good. In addition, cyanate ester resin also has a low linear thermal expansion coefficient, good moisture resistance, excellent corrosion resistance, high dimensional stability, strong adhesion to metals, high flame retardancy, etc., which is very suitable for The mi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/44
Inventor 赵雄燕
Owner HEBEI UNIVERSITY OF SCIENCE AND TECHNOLOGY
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