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A method for preparing novel copper alloy protective layer material and film lamination

A technology of copper alloy and protective layer, which is applied in the application field of thin-film photovoltaic cells, and can solve problems such as poor weather resistance, disconnection, and electron migration

Active Publication Date: 2016-08-17
宁波荣宝雨半导体有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, pure silver and pure aluminum materials have poor weather resistance, and are prone to electron migration due to heat during future use. Long-term use will cause abnormal protrusions or disconnection of the film, resulting in reduced component life.

Method used

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  • A method for preparing novel copper alloy protective layer material and film lamination
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  • A method for preparing novel copper alloy protective layer material and film lamination

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Embodiment 1

[0023] A method for preparing a novel copper alloy protective layer material and film lamination, adopting a multilayer structure design, firstly glass substrate (Corning 7095), pure aluminum target material, copper alloy (Cu-15wt%Ni) and zinc oxide aluminum ( ZnO+2wt%Al2O3) target material was placed in the vacuum sputtering machine, and the vacuum pumping system pumped the background pressure of the sputtering chamber to 0.7×10 -5 -0.9×10 -5 After torr, argon is used as the working gas, and argon is introduced through the throttle valve to control the working pressure of the sputtering chamber to be 3×10 -3torr, the glass substrate is not heated. Then sputter the first layer of 100nm thick zinc aluminum oxide (ZnO+2wt%Al2O3) film with DC power supply, the second layer of 200nm thick pure aluminum film, and the third layer of 50nm thick copper alloy (Cu-15wt%Ni) Thin film, that is, to form the required Glass / ZAO / Al / Cu-alloy multilayer film structure, use a four-point probe...

Embodiment 2

[0025] A method for preparing a new type of copper alloy protective layer material and film lamination, adopting a multi-layer structure design, first of all glass substrate (Corning 7095), pure aluminum target material, copper alloy (Cu-ˇ30wt%Ni) and zinc oxide aluminum ( ZnO+2wt%Al2O3) target material was placed in the vacuum sputtering machine, and the vacuum pumping system pumped the background pressure of the sputtering chamber to 0.7×10 -5 -0.9×10 -5 After torr, argon is used as the working gas, and argon is introduced through the throttle valve to control the working pressure of the sputtering chamber to be 3×10 -3 torr, the glass substrate is not heated. Then sputter the first layer of 100nm thick zinc aluminum oxide (ZnO+2wt%Al2O3) film with DC power supply, the second layer of 200nm thick pure aluminum film, and the third layer of 50nm thick copper alloy (Cu-30wt%Ni) Thin film, that is, to form the required Glass / ZAO / Al / Cu-alloy multilayer film structure, use a fo...

Embodiment 3

[0027] A method for preparing a novel copper alloy protective layer material and film lamination, adopting a multilayer structure design, first glass substrate (Corning 7095), pure aluminum target material, copper alloy (Cu-45wt%Ni) and zinc oxide aluminum ( ZnO+2wt%Al2O3) target material was placed in the vacuum sputtering machine, and the vacuum pumping system pumped the background pressure of the sputtering chamber to 0.7×10 -5 -0.9×10 -5 After torr, argon is used as the working gas, and argon is introduced through the throttle valve to control the working pressure of the sputtering chamber to be 3×10 -3 torr, the glass substrate is not heated. Then sputter the first layer of 100nm thick zinc aluminum oxide (ZnO+2wt%Al2O3) film with DC power supply, the second layer of 200nm thick pure aluminum film, and the third layer of 50nm thick copper alloy (Cu-45wt%Ni) Thin film, that is, to form the required Glass / ZAO / Al / Cu-alloy multilayer film structure, use a four-point probe ...

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Abstract

The invention provides a method for preparing a novel copper alloy protective layer material and film lamination. First, a transparent conductive film (zinc aluminum gallium oxide) and a metal layer are sputtered on the glass or PET with an existing absorbing layer, and then copper is sputtered. Alloy protective layer, which forms the thin-film laminated structure of the upper electrode of the thin-film photovoltaic cell (substrate / ZAGO / metal or alloy / Cu-alloy. The thin film can be sputtered at low temperature (<150°C) to form a film, which is suitable for glass and various The use of flexible substrates, the sputtering of pure aluminum, pure silver, aluminum alloy or silver alloy ensures the low resistance of the wire, and the copper alloy coating on the upper surface increases the weather resistance of the wire, forming a low-cost, low-resistance, weather-resistant Good film structure, the resistance value can be maintained at 6x0 ‑6 Below Ωcm, it meets the production requirements of the electrodes of thin-film photovoltaic cells.

Description

technical field [0001] The invention relates to a novel copper alloy protective layer material and a method for preparing a thin film lamination, belonging to the application field of thin film photovoltaic cells. Background technique [0002] With the development of society and the rapid advancement of science and technology, the demand for functional materials is becoming increasingly urgent. New functional materials have become the key to the development of new technologies and emerging industries. With the development of industries such as displays, touch screens, semiconductors, and solar energy, a new functional material—transparent conducting oxide (TCO film for short)—is produced and developed. The so-called transparent conductive film refers to a film material with a light transmittance of more than 80% in the range of visible light, high conductivity, and a specific resistance value lower than 1x10 -3 Ω.cm. It is known that metals such as Au, Ag, Pt, Cu, Rh, Pd,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C23C14/08C23C14/18
Inventor 黄信二
Owner 宁波荣宝雨半导体有限公司
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