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Method for cleaning surfaces of sapphire substrate materials by using polishing to replace washing

A sapphire substrate, clean technology, applied in liquid cleaning methods, cleaning methods and utensils, surface polishing machine tools, etc., can solve the problems of consuming chemicals and deionized water, volatile environment, and dangerous operation. Achieve the effect of saving cleaning time, improving cleaning efficiency and avoiding pollution

Active Publication Date: 2015-07-22
江西伟嘉创展企业管理有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] The purpose of the present invention is to solve the problem that the existing sapphire cleaning technology has many steps, consumes a lot of chemicals and deionized water, and the use of strong acid, strong alkali and strong oxidizing agent is not only dangerous to operate, but also easy to volatilize to cause environmental pollution, as well as harm to the health of operators. The surface cleaning method of the sapphire substrate material that uses polishing instead of washing to provide an environmentally friendly, cost-reducing, and operator-protected method for the defects that cause harm

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] A method for cleaning the surface of a sapphire substrate material by polishing and washing. The method for surface cleaning includes the following steps:

[0030] a) After the sapphire substrate material is polished after the polishing process, the oxidizing solution is passed into the polishing machine for secondary polishing, the pressure is 0.05MPa, the flow rate is 500mL / min, and the polishing time is 150s; the active ingredient in the oxidizing solution is electrolysis The strong anodic oxidation solution obtained from the diamond film, the volume fraction of the strong anodic oxidation solution in the oxidation solution is 10%;

[0031] b) Then pass the cleaning solution made of FA / O chelating agent and non-ionic surfactant fatty alcohol polyoxyethylene ether into the polishing machine for polishing again, the pressure is 0.05MPa, the flow rate is 500mL / min, and the polishing time is 150s; The volume fraction of FA / O chelating agent in the cleaning solution is 1‰, and...

Embodiment 2

[0035] A method for cleaning the surface of a sapphire substrate material by polishing and washing. The method for surface cleaning includes the following steps:

[0036] a) After the sapphire substrate material is polished after the polishing process, the oxidizing solution is passed into the polishing machine for secondary polishing, the pressure is 0.08MPa, the flow rate is 600mL / min, and the polishing time is 130s; the active ingredient in the oxidizing solution is electrolysis The strong anodic oxidation solution obtained from the diamond film, the volume fraction of the strong anodic oxidation solution in the oxidation solution is 15%;

[0037] b) Then pass the cleaning solution made of FA / O chelating agent and nonionic surfactant fatty alcohol polyoxyethylene ether into the polishing machine for polishing again, the pressure is 0.08MPa, the flow is 600mL / min, and the polishing time is 130s; The volume fraction of FA / O chelating agent in the cleaning solution is 1.2‰, and the...

Embodiment 3

[0041] A method for cleaning the surface of a sapphire substrate material by polishing and washing. The surface cleaning method includes the following steps:

[0042] a) After the sapphire substrate material is polished after the polishing process, the oxidizing solution is passed into the polishing machine for secondary polishing, the pressure is 0.1MPa, the flow rate is 700mL / min, and the polishing time is 120s; the active ingredient in the oxidizing solution is electrolysis The strong anodic oxidation solution obtained from the diamond film, the volume fraction of the strong anodic oxidation solution in the oxidation solution is 20%;

[0043] b) Then pass the cleaning solution made of FA / O chelating agent and nonionic surfactant fatty alcohol polyoxyethylene ether into the polishing machine for polishing again, the pressure is 0.1MPa, the flow rate is 700mL / min, and the polishing time is 120s; The volume fraction of FA / O type chelating agent in the cleaning solution is 1.5‰, and...

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PUM

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Abstract

The invention relates to a method for cleaning surfaces of sapphire substrate materials by using polishing to replace washing. Firstly, oxidation liquid is added for cleaning organic matter, then mixed cleaning liquid of active agents and chelating agents are added for removing particles and metal ions, and finally deionized water is added for conducting cleaning. According to the method, the cleaning liquid does not contain strong acid and strong base components, is environmentally friendly and free of pollution, and has no harm to technical operators; after cleaning is finished, the quantity of dirt on the surfaces is lower than 300 required by the industry and reaches or exceeds the required level in the industry; cleaning efficiency is high and can reach more than 98%, cleaning time is saved, cleaning equipment is prevented from being used, industrial production capacity is enhanced, and production cost is reduced.

Description

Technical field [0001] The invention belongs to a cleaning technology for the surface of a wafer after CMP, and particularly relates to a method for cleaning the surface of a sapphire substrate material by polishing. Background technique [0002] As the third-generation semiconductor material after Si and GaAs, GaN has undoubtedly become a milestone in the development of the LED chip manufacturing industry. At present, vigorously developing GaN-based LED luminescent materials has become the trend and focus of the lighting industry in recent years. Since GaN is difficult to prepare bulk materials and thin films must be grown on other substrate materials, the choice of substrate is the primary consideration for the manufacture of GaN-based LED chips. There are many kinds of GaN substrate materials, including sapphire, silicon carbide, silicon, magnesium oxide, zinc oxide, etc. Among many materials, sapphire substrate material has become the material of choice for cost and process f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B08B3/08B08B3/10B24B29/02H01L21/3065
CPCB08B3/08B08B3/10H01L21/02082
Inventor 郑伟艳曾锡强
Owner 江西伟嘉创展企业管理有限公司