Coating film process for metallurgical grade monocrystalline silicon solar cell double-layer anti-reflection film

A solar cell and monocrystalline silicon technology, which is applied in metal material coating process, coating, circuit, etc., can solve the problem of poor passivation effect of metallurgical-grade monocrystalline silicon wafers, low conversion efficiency of cells, and low conversion efficiency, etc. problem, to achieve good passivation effect, broaden the market, and narrow the gap

Active Publication Date: 2014-02-05
NINGXIA YINXING ENERGY
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Problems solved by technology

However, most domestic metallurgical-grade monocrystalline silicon solar cell coating processes use PECVD equipment to deposit a single-layer silicon nitride anti-reflection film. Because the impurity content and defects of metallurgical-grade monocrystalline silicon wafers are higher than those of improved Siemens method single-crystalline silicon wafers, resulting in The minority carrier lifetime of s

Method used

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  • Coating film process for metallurgical grade monocrystalline silicon solar cell double-layer anti-reflection film

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[0020] Example 1:

[0021] The metallurgical grade monocrystalline silicon solar cell double-layer silicon nitride anti-reflection film process of the present invention is mainly applied to a tubular PECVD coating machine, and its specific implementation is shown in the following steps:

[0022] (1) Vacuum: Vacuum the reaction chamber of the tubular PECVD coating machine until the pressure value is reduced to 30mTorr;

[0023] (2) Ammonia and silane enter: time 15s, control ammonia flow 6400sccm, silane flow 1400sccm, the final reaction chamber pressure value reaches 1600mTorr;

[0024] (3) The first coating step: the coating time is 110s, the coating temperature is 450℃, the RF power is 6300W, and the pulse switching time ratio is 4:45;

[0025] (4) The flow rate of ammonia and silane is changed: the reaction chamber after the first coating is evacuated for 150s, the pressure is reduced to 30mTorr, and then ammonia and silane are introduced for 15s, and the ammonia flow is adjusted to ...

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Abstract

The invention relates to a coating film process for a metallurgical grade monocrystalline silicon solar cell double-layer anti-reflection film. The coating film process is characterized by comprising the following steps: performing vacuum pumping inside a reaction chamber of a coating machine; aerating ammonia gas and silicane for 15s to 20s, controlling the ammonia flow to be 6300sccm to 6400sccm and the silane flow to be 1400sccm to 1500sccm; performing first film coating; performing vacuum pumping inside the reaction chamber, aerating ammonia gas and silicane for 15s to 20s, controlling the ammonia flow to be 7100sccm to 7200sccmand and the silane flow to be 600sccm to 700sccm; performing second film coating; performing vacuum pumping inside the reaction chamber, and aerating N2 until the pressure reaches normal pressure. Proved by trial use, the coating film process combines advantages in various aspects of the silicon nitride film and reaches maximum advantage.

Description

technical field [0001] The invention relates to a coating process in the manufacture of metallurgical-grade single-crystal silicon solar cells, in particular to a double-layer anti-reflection film coating process for metallurgical-grade single-crystal silicon solar cells. Background technique [0002] The application of silicon nitride anti-reflection film on solar cells has been extremely extensive. It mainly plays two roles. One is to reduce the reflection of light and increase the absorption of light by the battery; the other is to increase passivation, and the effect of silicon nitride coating is directly Affect the minority carrier life of the silicon wafer after coating and the conversion efficiency of the cell. However, the passivation effect of the film layer and the two characteristics of anti-reflection light are contradictory. [0003] At present, the conversion efficiency of double-layer silicon nitride coatings on silicon wafers according to the domestic improv...

Claims

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Application Information

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IPC IPC(8): C23C16/34H01L31/18H01L31/0216
CPCY02P70/50
Inventor 徐云飞李卫东常松山丁钧孙樵纪牟赫
Owner NINGXIA YINXING ENERGY
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