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Novel diblock copolymer, preparation method thereof, and method of forming nano pattern using the same

一种二嵌段共聚物、纳米图案的技术，应用在用于信息加工的纳米技术、纳米技术、纳米技术等方向，能够解决嵌段共聚物合成复杂、不可行、不能形成圆柱形纳米结构等问题

Active Publication Date: 2014-02-05
LG CHEM LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, these methods are too complex to be used as next-generation nanopatterning techniques or not economically viable
Furthermore, the existing PS-PMMA diblock copolymers that have been intensively studied so far, as well as any kind of diblock copolymers, cannot be directly formed into a square (or rectangular shape) without auxiliary materials or additives that replicate the nanostructure ) aligned cylindrical nanostructures
[0009] That is, according to the prior art, cylindrical nanostructures arranged in squares (or rectangles) cannot be formed, or a photomask alone is required, or the synthesis of the block copolymer itself is complicated
Therefore, any patterning method using previously known block copolymers cannot easily form nanostructures arranged in squares (or rectangles), and thus may not be suitable for application in the design and mass production of semiconductor circuits

Method used

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  • Novel diblock copolymer, preparation method thereof, and method of forming nano pattern using the same
  • Novel diblock copolymer, preparation method thereof, and method of forming nano pattern using the same
  • Novel diblock copolymer, preparation method thereof, and method of forming nano pattern using the same

Examples

Experimental program
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Embodiment 1 and 2

[0115] Examples 1 and 2: Synthesis and identification of crystallinity of acrylamide-based monomers

Embodiment 1

[0116] [Example 1]: Synthesis of p-dodecylphenylacrylamide (DOPAM) and preparation of single crystal

[0117] First, p-dodecylaniline (12 g, 0.046 mol) was dissolved in THF solvent (100 mL). The solution was poured into a 100 mL three-neck round flask, and an acid scavenger containing imidazole and triethylamine in the same mole fraction (0.023 mol) was added dropwise through a funnel for 10 minutes. Under nitrogen atmosphere, a solution containing acryloyl chloride (3.8 mL, 0.047 mol) in THF (20 mL) was gradually added dropwise to the above mixed solution through a dropping funnel over 20 minutes. Meanwhile, the solution was cooled on an ice bath to prevent the temperature of the reaction mixture from rising above 5°C. After reacting at 0°C for 6 hours, the solution was kept at 25°C for an additional 9 hours. At the end of the reaction, the solution was passed through filter paper to remove precipitated salts, and the solvent was evaporated from the filtrate on an evapora...

Embodiment 2

[0124] [Example 2]: p-tetradecylphenylacrylamide (TEPAM) and p-hexadecylphenylpropene Synthesis of Amide (HEPAM) and Preparation of Single Crystal

[0125] In addition to using p-tetradecylaniline containing 14 carbon atoms or p-hexadecylaniline containing 16 carbon atoms instead of p-dodecylaniline containing 12 carbon atoms, in the same manner as in Example 1 TEPAM and HEPAM were synthesized in the same manner as described in , with yields of 90% and 93%, respectively. Single crystals of TEPAM and HEPAM were grown in the same manner as described in Example 1 and identified by XRD analysis, and it was confirmed that the obtained single crystals had a monoclinic crystal structure.

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Abstract

The present invention relates to a diblock copolymer that may facilitate formation of a finer nano pattern, and be used for manufacture of an electronic device including a nano pattern or a bio sensor, and the like, a method for preparing the same, and a method for forming a nano pattern using the same, The diblock copolymer comprises a hard segment including at least one specific acrylamide-based repeat unit, and a soft segment including at least one (meth)acrylate-based repeat unit.

Description

technical field [0001] The present invention relates to a novel diblock copolymer, a method for preparing the copolymer and a method for forming nanopatterns using the copolymer. More specifically, the present invention relates to a diblock copolymer, a method for preparing the copolymer, and a method for forming nanopatterns using the copolymer, which can facilitate the formation of finer nanopatterns and can For the manufacture of electronic devices or biosensors including nanopatterns. Background technique [0002] With the rapid development of nanotechnology, the requirements for nanoscale materials are increasing, and the size of electronic devices is decreasing. As a result, photolithography, the top-down method currently used to fabricate silicon devices, is gradually reaching its limits. That is to say, although the photolithography technology currently used to manufacture silicon semiconductors has many advantages in terms of process optimization and application, ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08F297/00C08F220/10C08F220/54G03F7/00C08J5/18
CPCC08F22/38G03F7/0002C08F293/005C08F2438/03B82Y10/00B82Y40/00H01L21/3065B81C2201/0149B81C1/00396C08F220/56B81C2201/0198
Inventor 韩阳奎李济权金水火
Owner LG CHEM LTD
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