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Micro-nano structure filter, filter supercell and cmos digital image sensor

A micro-nano structure and filter technology, applied in radiation control devices and other directions, can solve the problems of high process cost, difficult operation, unfavorable integration, etc., and achieve the effects of simple process, high integration and good designability

Active Publication Date: 2016-07-27
珠海优特精益发展有限公司
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  • Abstract
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  • Application Information

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Problems solved by technology

The former is complicated in equipment and difficult to operate; the latter can only be used for polarization imaging and has a single function
Not only that, at present, integrated image sensors for both spectral imaging and polarization imaging generally rely on polymer color filters or polarizers, which not only have high process costs and poor stability, but also have low functional plasticity, which is not conducive to integration.

Method used

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  • Micro-nano structure filter, filter supercell and cmos digital image sensor
  • Micro-nano structure filter, filter supercell and cmos digital image sensor
  • Micro-nano structure filter, filter supercell and cmos digital image sensor

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Embodiment Construction

[0030] The present invention will be further detailed below in conjunction with the accompanying drawings:

[0031] Figure 1 to Figure 3 The first embodiment of the micro-nano structure filter of the present invention is shown.

[0032] See figure 1 As shown, the micro-nano structure filter includes an upper metal layer 4, a dielectric layer 3, a lower metal layer 2, and a substrate layer 1 connected to the outside of the lower metal layer 2. The lower metal layer 2 has the same one-dimensional structure period. The substrate layer may be silicon dioxide, silicon nitride, magnesium fluoride, etc., preferably silicon dioxide.

[0033] In this embodiment, the upper metal layer 4 may be a single metal layer, which is composed of one of gold, platinum, silver, copper, aluminum, and titanium; the upper metal layer 4 may also be an alloy layer, and the alloy layer is An alloy layer of one element among gold, platinum, silver, copper, aluminum, and titanium; the upper metal layer 4 may a...

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Abstract

The invention relates to a micro-nano structure filter, a filter supercell, and a CMOS digital image sensor. The micro-nano structure filter is a multilayer structure composed of a metal layer and a dielectric layer, and the filter supercell is a micro-nano structure filter. A 4X4 matrix is ​​formed, and several supercells are distributed in a periodic array horizontally and vertically to form a CMOS digital image sensor. The CMOS digital image sensor of the present invention is a fully integrated CMOS chip, which has the functions of spectral imaging and polarization imaging at the same time; wherein, the spectral filtering function and polarization filtering function for imaging are all realized by micro-nano structure filters, and by optimizing the design of each pixel The arrangement of the micro-nano structure filter and the pixel array can simultaneously realize spectral imaging and polarization imaging by combining specific pixels on a CMOS chip; compared with existing imaging equipment, the digital image sensor of the present invention has multi-functional imaging , high integration and high reliability advantages.

Description

Technical field [0001] The invention belongs to the technical field of digital image sensors, and in particular relates to a method for manufacturing a micro-nano structure filter, a filter super cell, a CMOS digital sensor, and a CMOS digital image sensor. Background technique [0002] With the ever-increasing demand for digital imaging in society, digital imaging technology has maintained a rapid development momentum since its development in the 1970s. In addition to being used in digital cameras and other products, it has been widely used in real-time monitoring, video conferencing, robot vision, biomedical analysis, food material quality monitoring, and aerospace and other fields. Thanks to the rapid development and mature technology of silicon-based CMOS, large-array visible light sensors have made great progress. For example, the maximum resolution of the chip used in the Nikon D800 camera has reached 7360×4912. [0003] Polarization imaging has attracted attention because o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/146
Inventor 陈沁何进杜彩霞何清兴张湘煜梅金河朱小安王成
Owner 珠海优特精益发展有限公司
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