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Organic field effect transistor and preparation method thereof

A transistor and organic field technology, applied in the field of organic field effect transistors and their preparation, can solve the problems of device performance degradation, failure to meet application requirements, time-consuming and labor-intensive post-annealing process, etc. Effect

Inactive Publication Date: 2014-02-19
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The main problem is that the size of the formed grains or the island structure formed by multiple grains is difficult to accurately control and cannot meet the application requirements; and the post-annealing process is time-consuming and labor-intensive, which requires the heat resistance of other functional layers in the device Harsh; at the same time, organic semiconductor materials are easily affected by water vapor or oxygen in the air, resulting in a decrease in the performance of the device

Method used

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  • Organic field effect transistor and preparation method thereof
  • Organic field effect transistor and preparation method thereof
  • Organic field effect transistor and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0082] Clean the substrate composed of transparent substrate and transparent conductive ITO, and dry it with nitrogen after cleaning; spin-coat 100nm PS gate insulating layer on the surface of transparent conductive cathode ITO, and dry the formed film; Spin-coat UV-sensitive adhesive-P3HT organic semiconductor layer (30nm) with a mass ratio of 1:1000 on the gate insulating layer; the raw materials of the UV-sensitive adhesive include the following components:

[0083]

[0084] Wherein the photoinitiator is an acetophenone derivative, the photosensitizer includes thioxanthraquinone and Michler's ketone, and the auxiliary agent includes an antistatic agent, a flame retardant and a coupling agent. After the spin coating, the organic semiconductor layer is cured by ultraviolet light; the gold source electrode and the drain electrode (10nm) are thermally evaporated on the organic semiconductor layer; and then the organic semiconductor layer is cured again. The measured saturati...

Embodiment 2

[0086] Clean the substrate composed of transparent substrate and transparent conductive ITO, and dry it with nitrogen after cleaning; spin-coat a 600nm PS gate insulating layer on the surface of the transparent conductive cathode ITO, and dry the formed film; Spin-coating UV-sensitive adhesive on the gate insulating layer: P3HT mass ratio of UV-sensitive adhesive-organic semiconductor material composite layer (300nm) with a mass ratio of 1:1000; the weight percent composition of the UV-sensitive adhesive is:

[0087]

[0088]Wherein the photoinitiator is an acetophenone derivative, the photosensitizer includes thioxanthraquinone and Michler's ketone, and the auxiliary agent includes an antistatic agent, a flame retardant and a coupling agent. After the spin coating, the organic semiconductor layer is cured by ultraviolet light; the gold source electrode and the drain electrode (50nm) are thermally evaporated on the organic semiconductor layer; and then the organic semiconduc...

Embodiment 3

[0090] Clean the substrate composed of transparent substrate and transparent conductive ITO, and dry it with nitrogen after cleaning; spin-coat a 400nm PS gate insulating layer on the surface of the transparent conductive cathode ITO, and dry the formed film; Spin-coating UV-sensitive adhesive on the gate insulating layer: P3HT mass ratio of UV-sensitive adhesive-organic semiconductor material composite layer (200nm) with a mass ratio of 3:1000; the weight percentage composition of the UV-sensitive adhesive is:

[0091]

[0092] Wherein the photoinitiator is an acetophenone derivative, the photosensitizer includes thioxanthraquinone and Michler's ketone, and the auxiliary agent includes an antistatic agent, a flame retardant and a coupling agent. After the spin coating, the organic semiconductor layer is cured by ultraviolet light; the gold source electrode and the drain electrode (50nm) are thermally evaporated on the organic semiconductor layer; and then the organic semico...

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Abstract

The invention discloses an organic field effect transistor and a preparation method of the organic field effect transistor. The organic field effect transistor structurally comprises a substrate, a grid electrode, a grid electrode insulating layer, an organic semiconductor layer, a source electrode and a drain electrode, and 0.1% to 1% of ultraviolet sensitive glue is added to the organic semiconductor layer to form an ultraviolet sensitive glue-organic semiconductor material composite layer. According to the organic field effect transistor, the problem that the grain size is difficult to accurately control in the process of forming a film with soluble organic semiconductor materials is solved, the aim of controlling the grain size or the size of an island structure formed by gathering a plurality of grains in situ is achieved, meanwhile, the air stability of the organic field effect transistor is improved, and the high-performance organic field effect transistor is obtained.

Description

technical field [0001] The invention relates to the technical field of electronic components, in particular to an organic field effect transistor and a preparation method thereof. Background technique [0002] Field-effect transistors are the mainstream research direction in the field of optoelectronics and electronic technology. Because they can work under low current and low voltage conditions, they have been widely used in large-scale integrated circuits. Field-effect transistors are mainly divided into two categories: non-field-effect transistors and organic field-effect transistors (OFETs). OFETs were first reported by Tsumura in 1986 and have attracted widespread attention due to their potential applications in large-area displays, organic integrated circuits, radio frequency identification technology, and sensors. At present, organic field effect transistors can significantly improve the status quo in the field of electronic information dominated by non-field effect ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/05H01L51/30H01L51/40
CPCH10K71/10H10K85/113H10K85/623H10K10/466
Inventor 李杰于军胜施薇祁一歌
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA