Organic electroluminescent device and preparation method thereof
An electroluminescent device and luminescent technology, which is applied in the direction of electric solid-state devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of low device life, low luminous efficiency, and large current to drive light-emitting devices, and achieve device life. Improve, improve luminous efficiency, reduce the effect of injection barrier
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Embodiment 1
[0045] The organic electroluminescent device of the present embodiment has a structure of: glass / ITO / CuPc / NPB / NPB:Ir(MDQ) 2 (acac) / TPBi / Sm:TPBi / Ag
[0046] The fabrication method of the organic electroluminescent device is as follows:
[0047] 1. Use detergent, deionized water, isopropanol, and acetone to ultrasonically clean the glass substrate for 20 minutes, and then dry it with nitrogen;
[0048] 2. After cleaning the glass substrate, put it into a vacuum magnetron sputtering system to prepare an anode layer with a thickness of 100nm and made of ITO on the glass surface. At this time, ITO and glass are combined together, referred to as ITO glass; then , place the ITO glass in the plasma treatment chamber, and perform plasma treatment on the ITO layer to improve the work function of the anode layer and reduce the hole injection barrier;
[0049] 3. Place the ITO glass after oxygen plasma treatment in the vacuum thermal coating system, and stack the evaporated hole injecti...
Embodiment 2
[0053] The organic electroluminescent device of the present embodiment has a structure of: glass / ITO / ZnPc / TCTA / TCTA:Ir(ppy) 3 / BAlq / Sr:Alq 3 / Al
[0054] The fabrication method of the organic electroluminescent device is as follows:
[0055] 1. Use detergent, deionized water, isopropanol, and acetone to ultrasonically clean the glass substrate for 20 minutes, and then dry it with nitrogen;
[0056] 2. After cleaning the glass substrate, put it into a vacuum magnetron sputtering system to prepare an anode layer with a thickness of 100nm and made of ITO on the glass surface. At this time, ITO and glass are combined together, referred to as ITO glass; then , place the ITO glass in the plasma treatment chamber, and perform plasma treatment on the ITO layer to improve the work function of the anode layer and reduce the hole injection barrier;
[0057] 3. Place the ITO glass after oxygen plasma treatment in the vacuum thermal coating system, and stack the evaporated hole injectio...
Embodiment 3
[0061] The organic electroluminescent device of this embodiment has a structure of: glass / ITO / m-MTDATA / TPD / TCTA:Ir(ppy) 3 / BAlq / Yb:BAlq / Al-Mg
[0062] The fabrication method of the organic electroluminescent device is as follows:
[0063] 1. Use detergent, deionized water, isopropanol, and acetone to ultrasonically clean the glass substrate for 20 minutes, and then dry it with nitrogen;
[0064] 2. After cleaning the glass substrate, put it into a vacuum magnetron sputtering system to prepare an anode layer with a thickness of 100nm and made of ITO on the glass surface. At this time, ITO and glass are combined together, referred to as ITO glass; then , place the ITO glass in the plasma treatment chamber, and perform plasma treatment on the ITO layer to improve the work function of the anode layer and reduce the hole injection barrier;
[0065] 3. Place the ITO glass after oxygen plasma treatment in the vacuum thermal coating system, and stack the evaporated hole injection la...
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