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Laser-assisted thin film preparation method and equipment

A laser-assisted, thin-film technology, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of poor stability, high cost of film preparation, low purity, etc., and achieve good stability and reliable product quality High performance and high purity

Inactive Publication Date: 2014-02-26
李学耕 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problems of high production cost, low purity and poor stability of thin films in the prior art, the present invention provides a method for laser-assisted preparation of thin films. The method is simple to operate, low in cost, and the prepared film layer has high purity and stability Good properties, uniform shape and particle size, can be widely used in the preparation of various semiconductor or solar cell films

Method used

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  • Laser-assisted thin film preparation method and equipment
  • Laser-assisted thin film preparation method and equipment
  • Laser-assisted thin film preparation method and equipment

Examples

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Embodiment 1

[0027] The thin film preparation method of the present invention will be described by taking deposition of microcrystalline silicon as an example. The preparation of microcrystalline silicon thin film is based on the organic precursor of silicon, such as silane, such as but not limited to: SiH 4 、Si 2 h 6 、Si 3 h 8 etc.; chlorosilanes such as SiH 2 Cl 2 , SiHCl 3 、SiCl 4 、Si 2 Cl 6 Wait.

[0028] The organic precursor gas of silicon enters the plasma generator through the gas introduction device, and enters the reaction chamber after being activated by the plasma generator. In the reaction chamber, the laser beam emitted by the laser beam is heated, and the organic silicon is cracked to obtain Silicon atoms, silicon atoms are deposited on the substrate above the reaction chamber, and a film is grown on the substrate. In addition, the protective gas H 2 and sensitizing gas SF 6 . h 2 Confine the reactive gas and sensitizing gas near the center of the reaction cha...

Embodiment 2

[0033] The present invention will be further described by taking the preparation of copper indium gallium selenide thin film as an example.

[0034] The copper indium gallium selenide thin film is a compound film layer composed of various elements, and the precursor gases include organic copper, organic indium, organic gallium, and selenium vapor. For example, copper-containing organic precursors include, but are not limited to: Cu(C 11 h 19 o 2 ) 2 , Cu(CF 3 COCHCOCF 3 ) 2 , (C 5 h 5 )CuP(C 2 h 5 ) 3 , Cu(CF 3 COCHCOCH 3 ) 2 , Cu(CF 3 COCHCOCF 3 )P(CH 3 ) 3 etc.; Indium-containing organic precursors include, but are not limited to: triphenylindium (C 18 h 15 In), triphenylpyridine indium (C 23 h 20 InN), p-tolyl indium (C 21 h 21ln) etc.; Gallium-containing organic precursors include but are not limited to: dimethylgallium fluoride (C 2 h 6 FGa), trimethylgallium (C 3 h 9 Ga), triethylgallium (C 6 h 15 Ga), tripropylgallium (C 9 h 21 Ga), triiso...

Embodiment 3

[0039] Same as Example 2, but the substrate is made of flexible stainless steel. The device operates as Figure 4a , Figure 4b shown.

[0040] Figure 4a , 4b are schematic diagrams of the equipment for depositing thin films on flexible roll-to-roll substrates, respectively, Figure 4a is the front view, Figure 4b It is a left view, and the cavity structure and substrate heating device are omitted in the figure. The activated organic precursor gas ejected from the plasma generator 303 is cracked under the laser heating effect generated by the laser 302, and the obtained copper, indium, gallium, and selenium atoms interact to form a copper indium gallium selenide compound, which is deposited on the flexible substrate 301 on. The flexible substrate 301 is unwound by the unwinding device 306 , and the film-deposited part 304 is rewound by the unwinding device 307 . The region where the laser-heated precursor gas reacts and the particles are deposited on the substrate is...

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Abstract

The invention discloses a laser-assisted thin film preparation method and corresponding equipment, and belongs to the field of thin film material preparation. The laser-assisted thin film preparation method comprises the following steps: feeding a gaseous precursor containing elements required for preparing a thin film into a plasma generating device, activating the gaseous precursor by using the plasma generating device, and then enabling the activated gaseous precursor to enter a reaction cavity; using a lens on the wall of the reaction cavity for converging laser beams emitted by a laser generating device, and then enabling the laser beams to enter the reaction cavity; heating the active gaseous precursor in the reaction cavity by using laser so as to split the active gaseous precursor, thus obtaining atomic state deposition elements, depositing the atomic state deposition elements on a substrate above the cavity, and growing so as to form the film on the substrate. The laser-assisted thin film preparation method has the advantages that the production cost of the thin film is greatly reduced, the equipment is simple, the process stability is good, the prepared thin film has high purity, good stability and high quality reliability and is uniform in morphology and particle sizes, and meanwhile, the relatively high thin film deposition rate can be realized.

Description

technical field [0001] The invention relates to the field of film preparation, in particular to a method and equipment for laser-assisted film preparation. Background technique [0002] In recent years, thin film materials have been widely used in many fields. The wide application of thin films has put forward higher requirements for the production of thin films. In actual production, it is necessary to prepare films with excellent performance and low cost. There are two types of film preparation, vacuum and non-vacuum. Vacuum coating has various forms such as sputtering method, evaporation method, chemical vapor deposition, ion coating, etc. The common characteristics are high film purity, good directionality, and good uniformity, but the disadvantage is that the cost of coating is high, and the investment in large-scale applications is too large ; Non-vacuum coating has coating method, water bath method, etc., and the preparation cost is relatively low, but the film has...

Claims

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Application Information

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IPC IPC(8): C23C16/44
Inventor 李学耕王东
Owner 李学耕
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