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High-mobility ratio aluminum-doped zinc oxide transparent conductive thin film and preparation method thereof

A technology of aluminum-doped zinc oxide and transparent conductive films, which is applied in the direction of oxide conductors, conductive layers on insulating carriers, non-metallic conductors, etc., can solve the problem of low mobility of AZO transparent conductive films, long processing time, Low mobility and other issues, to achieve the effect of improving photoelectric conversion efficiency, low cost, and simple process

Active Publication Date: 2014-03-05
ZAOZHUANG VISIONOX ELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method has greatly improved the optical transmittance and electrical conductivity of the film, due to the use of ITO, the cost is high, and the mobility is still low.
[0005] From the above literature on the preparation of high-mobility AZO transparent conductive films, it can be seen that although the mobility can be improved by annealing or adding a precursor layer, the mobility of the obtained AZO transparent conductive films is not too high (generally lower than 40cm 2 V -1 the s -1 ), or the processing process takes a long time, consumes a lot of energy, and has disadvantages such as high cost

Method used

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  • High-mobility ratio aluminum-doped zinc oxide transparent conductive thin film and preparation method thereof
  • High-mobility ratio aluminum-doped zinc oxide transparent conductive thin film and preparation method thereof
  • High-mobility ratio aluminum-doped zinc oxide transparent conductive thin film and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] The AZO ceramic target with a mass ratio of aluminum oxide to zinc oxide of 0.008:1 was selected as the seed layer AZO target, and a 50nm thick AZO seed layer was deposited on the damp white glass by DC magnetron sputtering. The sputtering conditions were: The sheet temperature is 350°C, the sputtering power is 200W, the sputtering time is 8 minutes, the sputtering gas is high-purity (purity greater than 99.999%) argon (that is, the volume ratio of oxygen to argon is 0:1), the gas flow rate It is 30sccm, and the working pressure is 0.4Pa.

[0038] Then select the AZO ceramic target with a mass ratio of aluminum oxide to zinc oxide of 0.005:1 as the AZO target for the main layer, and deposit an AZO main layer with a thickness of 1200 nm on the AZO seed layer by DC magnetron sputtering, that is, Deposited AZO transparent conductive film, the sputtering conditions are: the substrate temperature is 350°C, the sputtering power is 200W, the sputtering time is 50 minutes, and ...

Embodiment 2

[0044] The AZO ceramic target with a mass ratio of alumina to zinc oxide of 0.008:1 was selected as the AZO target for the seed layer, and a 130nm-thick AZO seed layer was deposited on ultra-white glass by DC magnetron sputtering. The sputtering conditions were: The substrate temperature is 350°C, the sputtering power is 200W, and the sputtering time is 8 minutes. The sputtering gas is a mixed gas of high-purity (purity greater than 99.999%) argon and high-purity (purity greater than 99.999%) oxygen. The volume ratio of argon is 1:2, the gas flow rate is 30sccm, and the working pressure is 0.4Pa.

[0045] Then choose the AZO ceramic target with a mass ratio of aluminum oxide to zinc oxide of 0.005:1 as the AZO target for the main layer, and deposit an AZO main layer with a thickness of 1230 nm on the AZO seed layer by DC magnetron sputtering, that is, Deposited AZO transparent conductive film, the sputtering conditions are: the substrate temperature is 350°C, the sputtering po...

Embodiment 3

[0057] The AZO ceramic target with a mass ratio of alumina to zinc oxide of 0.008:1 was selected as the AZO target for the seed layer, and a 150nm-thick AZO seed layer was deposited on ultra-white glass by DC magnetron sputtering. The sputtering conditions were: The substrate temperature is 350°C, the sputtering power is 200W, and the sputtering time is 8 minutes. The sputtering gas is a mixed gas of high-purity (purity greater than 99.999%) argon and high-purity (purity greater than 99.999%) oxygen. The volume ratio of argon is 1:9, the gas flow rate is 30sccm, and the working pressure is 0.4Pa.

[0058]Then select the AZO ceramic target with a mass ratio of aluminum oxide to zinc oxide of 0.005:1 as the AZO target for the main layer, and deposit an AZO main layer with a thickness of 1210 nm on the AZO seed layer by DC magnetron sputtering, that is, The AZO transparent conductive thin film of deposited state, sputtering condition is: substrate temperature is 350 ℃, and sputte...

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Abstract

The invention discloses a high-mobility ratio aluminum-doped zinc oxide transparent conductive thin film and a preparation method of the high-mobility ratio aluminum-doped zinc oxide transparent conductive thin film. The high-mobility ratio aluminum-doped zinc oxide transparent conductive thin film comprises a glass substrate, an AZO seed layer and an AZO main part layer from bottom to top in sequence, wherein the thickness of the AZO seed layer ranges from 50nm to 200nm, and the thickness of the AZO main part layer ranges from 800nm to 1300nm; the mobility ratio of the aluminum-doped zinc oxide transparent conductive thin film is 40-60cm2V-1s-1, the electrical resistivity of the aluminum-doped zinc oxide transparent conductive thin film ranges from 2*10-4 omega centimeters to 5*10-4 omega centimeters, and the average transmittance of the aluminum-doped zinc oxide transparent conductive thin film within a wavelength range of 400nm to 1200nm is higher than 80%. According to the high-mobility ratio aluminum-doped zinc oxide transparent conductive thin film and the preparation method of the high-mobility ratio aluminum-doped zinc oxide transparent conductive thin film, high-concentration aluminum oxide-doped AZO is used as the seed player, heat treatment is conducted in a short time through a rapid thermal annealing method, as a result, processes are simple, consumed time is short, consumed energy is little, cost is low, and the high-mobility ratio aluminum-doped zinc oxide transparent conductive thin film is suitable for industrial production and application on a large scale.

Description

technical field [0001] The invention relates to the field of photoelectric materials, in particular to a high-mobility aluminum-doped zinc oxide transparent conductive film and a preparation method thereof. Background technique [0002] Transparent conductive oxide (TCO) thin film is a kind of thin film with high visible light transmittance and electrical conductivity at the same time, which is widely used in low radiation window, gas sensor, flat panel display, thin film transistor, light emitting Diodes and solar cells and other fields. Most TCO films are based on tin dioxide (SnO 2 ), indium oxide (In 2 o 3 ), zinc oxide (ZnO) and its compounds, deposited by different physical and chemical techniques. Among them, aluminum doped Znic oxide (AZO) transparent conductive film has attracted attention due to its low cost, non-toxicity, high radiation resistance, and stability in hydrogen plasma, and is widely used as Front electrodes of thin film solar cells. [0003] As ...

Claims

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Application Information

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IPC IPC(8): H01B5/14H01B1/08C23C14/35C23C14/08
Inventor 杨晔朱科宋伟杰兰品君黄金华
Owner ZAOZHUANG VISIONOX ELECTRONICS TECH CO LTD
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