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A trench Schottky diode structure and its preparation method

A Schottky diode, trench technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of difficulty in reducing the forward voltage drop VF, to reduce VF, increase the area, and improve the device. performance effect

Active Publication Date: 2016-08-24
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In view of the above-mentioned shortcoming of the prior art, the object of the present invention is to provide a trench Schottky diode structure and its preparation method, for solving the forward voltage drop of the trench Schottky diode in the prior art Difficult to reduce VF etc.

Method used

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  • A trench Schottky diode structure and its preparation method
  • A trench Schottky diode structure and its preparation method
  • A trench Schottky diode structure and its preparation method

Examples

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Embodiment 1

[0047] Such as figure 2 As shown, this embodiment provides a trench Schottky diode structure, which at least includes:

[0048] A substrate 201 of the first conductivity type;

[0049] A plurality of trench structures, including a plurality of trenches formed in the substrate 201, a dielectric layer 203 bonded to the surface of each trench, and a conductive material 204 filled in each trench; wherein, adjacent The surface of the substrate 201 between the two trench structures includes a concave arc surface;

[0050] The metal semiconductor compound 209 is formed on the surface of the substrate 201;

[0051] The front electrode layer 210 covers the metal semiconductor compound 209 and the surface of the trench structure.

[0052] As an example, it also includes a heavily doped layer 208 of the first conductivity type, which is formed on the surface of the substrate 201 and has a thickness greater than that of the metal semiconductor compound 209. In this embodiment, the shape of the h...

Embodiment 2

[0060] Such as Figure 3 ~ Figure 8 As shown, this embodiment provides a method for fabricating a trench Schottky diode structure, which includes at least the following steps:

[0061] Such as Figure 3 ~ Figure 4 As shown, first step 1) is performed to provide a substrate 201 of the first conductivity type, a plurality of trenches 202 arranged at intervals are formed in the substrate 201, a dielectric layer 203 is formed on the surface of the trench 202, and A conductive material 204 is deposited in the trench 202.

[0062] The first conductivity type may be an N-type conductivity type or a P-type conductivity type. In this embodiment, the first conductivity type is a P-type conductivity type. The substrate 201 may be a silicon substrate, a germanium silicon substrate, a germanium substrate, or a III-V group compound, such as gallium nitride, gallium arsenide, etc. In this embodiment, the substrate 201 is silicon Substrate. The dielectric layer 203 is SiO 2 , SiON, one or a comb...

Embodiment 3

[0075] Such as Figure 9 ~ Figure 16 As shown, this embodiment provides a method for fabricating a trench Schottky diode structure, which includes at least the following steps:

[0076] Such as Figure 9 ~ Figure 10 As shown, step 1) is first performed to provide a substrate 301 of the first conductivity type, and a silicon nitride layer 302 with a plurality of spaced windows 303 is formed in the substrate 301, and each window is treated by a selective oxidation process. The substrate 301 in 303 undergoes thermal oxidation to form a plurality of oxide layers 304 with convex arc surfaces on the lower surface.

[0077] The first conductivity type may be an N-type conductivity type or a P-type conductivity type. In this embodiment, the first conductivity type is an N-type conductivity type. The substrate 301 may be a silicon substrate, a silicon germanium substrate, a germanium substrate, or a III-V group compound, such as gallium nitride, gallium arsenide, etc. In this embodiment, th...

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Abstract

The invention provides a groove type Schottky diode structure and a preparation method thereof. The groove type Schottky diode structure at least comprises a substrate of a first conductive type, multiple groove structures, a metal semiconductor compound formed on the surface of the substrate and a front surface electrode layer covering the surfaces of the metal semiconductor compound and the groove structures, wherein the multiple groove structures comprise multiple grooves formed in the substrate, dielectric layers combined with the surfaces of the grooves and conductive materials filling the grooves, and the substrate surface between two neighboring groove structures comprises an cambered surface. Through technological improvements, the Schottky barrier layers on the surface of the substrate comprise cambered surface structures, and compared to conventional planar structures, the area is substantially increased, so that forward voltage drop VF is effectively reduced, and the device performance is improved. The structure and the preparation method provided by the invention are of high simplicity and have remarkable effects, thereby being suitable for industrial production.

Description

Technical field [0001] The invention relates to a semiconductor device and a preparation method thereof, in particular to a trench type Schottky diode structure and a preparation method thereof. Background technique [0002] With the continuous development of semiconductor technology, power devices, as a new type of device, are widely used in fields such as disk drives and automotive electronics. Power devices need to be able to withstand larger voltages, currents and power loads. However, the existing MOS transistors and other devices cannot meet the above requirements. Therefore, in order to meet the needs of applications, various power devices have become the focus of attention. [0003] The existing Schottky diodes are generally made of precious metals (gold, silver, aluminum, platinum, etc.) as the anode and N-type semiconductor as the cathode. The barrier formed on the contact surface of the two has rectification characteristics. Device. Because there are a large number of...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/0661H01L29/66143H01L29/8725
Inventor 黄晓橹沈健陈逸清
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD