Method for forming Llight resistance wall molding method by adopting silicon mold

Abstract

The invention provides a method for forming a light resistance wall molding method by adopting a silicon mold. The method comprises the following steps: the silicon mold, the front side of which the front side is provided with boss arrays, is manufactured, and mold cavities are formed by latticed grooves among the bosses; the front side of the silicon mold is pressed on a first baseplate with thermoplastic material through a mould pressing method; or the gap between the front side of the silicon mold and the first baseplate is fully filled with the thermoplastic material through a pressure casting method; the silicon mold is separated from the first baseplate after the mold cavities are fully filled with the thermoplastic material; a light resistance wall structure is formed on the first baseplate; the first baseplate is cleaned to removeso that residues on the first baseplate and the light resistance wall structure are removed. The silicon mold can be manufactured through the method of wet etching, dry etching, laser cutting or line cutting; the molding method has the advantages that the silicon is adopted to manufacture the mold, so that the cost of the mold manufacturing is reduced greatly; meanwhile, the etching method can be used for manufacturing the light resistance wall structures with different patterns conveniently and flexibly; compared with the conventional photoetching technology, the molding method adopts the silicon mold, so that more flexible choices on the requirements of materials of the light resistance wall are achieved.

Description

technical field [0001] The invention relates to a method for forming a photoresist wall using a silicon mold, and belongs to the technical field of semiconductor manufacturing. Background technique [0002] The photoresist wall photomask currently used in image sensors is made by spin-coating photoresist on a glass wafer, and forming a regularly arranged photoresist wall structure on the photoresist through exposure and development, such as figure 1 shown. The main problem of using photoresist to make the photoresist wall structure is that the photoresist material itself has small rigidity, large thermal expansion coefficient, and strong water absorption. In the subsequent baking process and reliability test, photoresist wall delamination or delamination from the glass often occurs. The phenomenon of shedding seriously affects product quality and service life. At the same time, the residue after exposure and development can easily lead to reliability problems of the sensor...

AI Technical Summary

Problems solved by technology

The main problem of using photoresist to make the photoresist wall structure is that the photoresist material itself has small rigidity, large thermal expansion coefficient, and strong water absorption. In the subsequent baking process and reliability test, photoresist wall delamination or delamination from the glass often occurs. The phenomenon of shedding seriously affects product quality and service life

At the same time, the residue after exposure and development can easily lead to reliability problems of the sensor

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