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Ultrathin carbon film prepared with ECR (Electron Cyclotron Resonance) oxygen-argon plasma etching technology and method of preparing ultrathin carbon film

A technology of plasma and argon ions, applied in the field of ultra-thin carbon film, can solve the problems of reducing the surface roughness and performance of carbon film, and achieve the effect of superior scratch resistance

Active Publication Date: 2014-04-23
XI AN JIAOTONG UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the plasma generated by this method still has a size of about 1 μ m microparticles of carbon, which may introduce defects in the deposited carbon film, reducing the surface roughness and performance of the carbon film

Method used

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  • Ultrathin carbon film prepared with ECR (Electron Cyclotron Resonance) oxygen-argon plasma etching technology and method of preparing ultrathin carbon film
  • Ultrathin carbon film prepared with ECR (Electron Cyclotron Resonance) oxygen-argon plasma etching technology and method of preparing ultrathin carbon film
  • Ultrathin carbon film prepared with ECR (Electron Cyclotron Resonance) oxygen-argon plasma etching technology and method of preparing ultrathin carbon film

Examples

Experimental program
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Effect test

Embodiment 1

[0030] 1) see figure 1 , with the hard disk not coated with carbon film as the substrate, put it into the plasma chamber after ultrasonic cleaning, when the vacuum degree in the chamber is pumped to 3×10 -4 After Pa, argon gas was introduced to raise the pressure in the vacuum chamber to 4×10 -2 Pa. Apply a magnetic coil current of 420A, turn on the microwave source, and adjust the microwave power to 200W. Under the coupling action of the magnetic field and microwave, the initial electrons in the cavity will generate electron cyclotron motion to ionize the incoming argon gas to obtain a high ionization rate. , High-density argon plasma. After the plasma state is stable, a DC bias of -300V is applied to the carbon target, and the argon ions in the plasma accelerate the bombardment of the carbon target. Under the action of the substrate bias of -5V, the carbon in the carbon target is deposited on the surface of the substrate to form carbon film. The sputtering deposition tim...

Embodiment 2

[0035] 1) With silicon as the substrate, put it into the plasma cavity after ultrasonic cleaning, when the vacuum in the cavity reaches 2×10 -4 After Pa, argon gas was introduced to increase the pressure in the vacuum chamber to 3×10 -2 Pa. Apply a magnetic coil current of 350A, turn on the microwave source, and adjust the microwave power to 100W. Under the coupling action of the magnetic field and microwave, the initial electrons in the cavity will generate electron cyclotron motion to ionize the incoming argon gas to obtain a high ionization rate. , High-density argon plasma. After the plasma state is stable, a DC bias of -200V is applied to the carbon target, and the argon ions in the plasma accelerate the bombardment of the carbon target. Under the action of the substrate bias of -30V, the carbon in the carbon target is deposited on the surface of the substrate to form carbon film. The sputtering deposition time is 1 min, and according to the deposition rate of 3 nm / min...

Embodiment 3

[0038] 1) Take the hard disk without carbon film as the substrate, put it into the plasma chamber after ultrasonic cleaning, and when the vacuum in the chamber is pumped to 4×10 -4 After Pa, argon gas was introduced to increase the pressure in the vacuum chamber to 5.5×10 -2 Pa. Apply a magnetic coil current of 380A, turn on the microwave source, and adjust the microwave power to 300W. Under the coupling action of the magnetic field and microwave, the initial electrons in the cavity will generate electron cyclotron motion to ionize the incoming argon gas to obtain a high ionization rate. , High-density argon plasma. After the plasma state is stable, a DC bias of -280V is applied to the carbon target, and the argon ions in the plasma accelerate the bombardment of the carbon target. Under the action of the substrate bias of -10V, the carbon in the carbon target is deposited on the surface of the substrate to form carbon film. The sputtering deposition time is 2 min, and accor...

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Abstract

The invention discloses an ultrathin carbon film prepared with an ECR (Electron Cyclotron Resonance) oxygen-argon plasma etching technology and a method of preparing the ultrathin carbon film. The method is implemented by carrying out sputtering deposition on a carbon film through argon plasma and etching the deposited carbon film with oxygen-argon plasma through an ECR plastic processing system, and has high application value. The defect that a uniform and continuous film cannot be easily formed by directly depositing the ultrathin carbon film is overcome. The ultrathin carbon film prepared with the method is 1.5-3.5 nanometers in thickness, and the surface root mean square roughness is 0.10-0.12 nanometer.

Description

technical field [0001] The invention belongs to the field of carbon film preparation, and relates to a method for preparing a carbon film, in particular to an ultra-thin carbon film prepared by ECR oxygen-argon plasma etching technology and the method. Background technique [0002] In recent years, carbon films have been widely used in the fields of machinery, electronics, optics, magnetic media protection and medicine due to their excellent properties such as high hardness, low surface roughness, low friction coefficient, high wear resistance, and biocompatibility. . Among them, the ultra-thin carbon film has played a vital role in the field of magnetic medium protection. [0003] At present, as the magnetic recording density of hard disks continues to increase, the requirements for magnetic spacing and flying height of hard disks continue to decrease. The continuous reduction of magnetic spacing requires the carbon film protective layer on the surface of the disk to be t...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/06C23C14/58
Inventor 刁东风郭美玲范雪
Owner XI AN JIAOTONG UNIV
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