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Sandwich structure for enhancing luminous intensity of photoluminescence of luminous film and preparation method of sandwich structure

A luminescent thin film and photoluminescent technology, which is applied in the direction of luminescent materials, chemical instruments and methods, thin material processing, etc., can solve the problems of reducing the fluorescence enhancement effect, easy to be oxidized, and long preparation time, so as to expand the application range and enhance The effect of luminous intensity and short preparation time

Active Publication Date: 2014-04-30
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In addition, heavy metal nanostructures are easily oxidized when exposed to air for a long time, which will reduce the fluorescence enhancement effect to a certain extent.
Due to the high price of noble metal materials, and the complex operation process of laying a layer of heavy metals with nanostructures on the surface of luminescent materials, the preparation time is long, and it is not suitable for large-scale industrial applications.

Method used

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  • Sandwich structure for enhancing luminous intensity of photoluminescence of luminous film and preparation method of sandwich structure
  • Sandwich structure for enhancing luminous intensity of photoluminescence of luminous film and preparation method of sandwich structure
  • Sandwich structure for enhancing luminous intensity of photoluminescence of luminous film and preparation method of sandwich structure

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Effect test

Embodiment 1

[0037] Silicon dioxide (SiO 2 ) transparent dielectric pellets mixed with isopropanol to form as figure 1 The indicated bead suspension, the bead concentration is about 1×10 5 µL -1 ;use figure 1 The dropper shown sucks the suspension of small balls, drops it on the surface of zinc oxide (ZnO) film grown on silicon carbide (SiC) single crystal substrate, and infiltrates the surface of zinc oxide film; at room temperature, when the suspension is in After natural evaporation of isopropanol, the following figure 1 The sandwich structure of silicon carbide single crystal substrate-zinc oxide film-single-layer densely packed silicon dioxide transparent dielectric sphere array is shown; as figure 2 As shown, using 325nm ultraviolet laser to excite the film, the obtained 380nm wavelength fluorescence intensity b is 11 times of the fluorescence intensity a of the non-bead dense film.

Embodiment 2

[0039] Silicon dioxide (SiO 2 ) Transparent dielectric pellets are mixed with water to form as figure 1 The indicated bead suspension, the bead concentration is about 4×10 4 µL -1 ;use figure 1 The dropper shown sucks the pellet suspension, drops it on the surface of the zinc oxide (ZnO) film grown on the metal titanium (Ti) substrate, and infiltrates the surface of the zinc oxide film; at room temperature, when the water in the suspension After natural evaporation, get as figure 1 The sandwich structure of metal titanium substrate-zinc oxide film-single-layer densely packed silicon dioxide transparent dielectric sphere array is shown; as image 3 As shown, using 325nm ultraviolet laser to excite the film, the obtained 380nm wavelength fluorescence intensity b is 3 times of the fluorescence intensity a of the densely packed film without small balls.

Embodiment 3

[0041] Silicon dioxide (SiO 2 ) Transparent dielectric pellets are mixed with ethanol to form as figure 1 The indicated bead suspension, the bead concentration is about 8×10 4 µL -1 ;use figure 1 The dropper shown sucks the bead suspension, drops it on the surface of the zinc oxide (ZnO) film grown on the graphene substrate, and infiltrates the surface of the zinc oxide film. At room temperature, when the ethanol in the suspension evaporates naturally, the following figure 1 The sandwich structure of graphene substrate-ZnO thin film-monolayer close-packed silicon dioxide transparent dielectric sphere array is shown. Such as Figure 4 As shown, using 325nm ultraviolet laser to excite the film, the obtained 380nm wavelength fluorescence intensity b is 3 times of the fluorescence intensity a of the densely packed film without small balls.

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Abstract

The invention relates to a sandwich structure for enhancing luminous intensity of photoluminescence of luminous film and a preparation method of the sandwich structure. The sandwich structure is a sandwich structure of substrate-luminous film-monolayer dense-paving sphere array formed by densely paving a micrometern transparent dielectric sphere monolayer on the luminous film; the used micrometer transparent dielectric spheres have relatively high transmissivity to wave lengths of exciting light and fluorescent light in the photoluminescence; the used fluorescence enhancing medium-micrometer transparent dielectric spheres are low in price and are suitable for industrial large-scale application. The used micrometer transparent dielectric spheres are not oxidized under air environment and can be used for steadily enhancing the luminous intensity of the fluorescence of the luminous film for a long time; the used micrometer transparent dielectric spheres have no requirements on the luminous film; the substrate can be nonmetal or metal, and due to substrate, the application range of the luminescence enhancement technology of the photoluminescence of the luminous film is effectively extended.

Description

technical field [0001] The invention relates to a sandwich structure and a preparation method for enhancing the photoluminescent luminous intensity of a luminescent film, and belongs to the technical field of luminescent material testing. Background technique [0002] Photoluminescence spectroscopy is an important means to characterize semiconductor light-emitting materials and a method to study their electronic states. Photoluminescence can provide information about the structure and composition of materials and the arrangement of environmental atoms. It is a non-destructive and highly sensitive analytical method. Therefore, photoluminescence spectroscopy is widely used in the fields of physics, material science, chemistry and biomedical detection. However, the luminous intensity of general luminescent thin film materials is relatively low, which limits the application of photoluminescent detection. [0003] At present, the surface plasmon fluorescence enhancement effect ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/54C09K11/02
CPCC09K11/025C09K11/54Y10T428/25Y10T428/254Y10T428/259
Inventor 闫胤洲曾勇赵艳季凌飞蒋毅坚
Owner BEIJING UNIV OF TECH
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